Highly spatially resolved investigation of structural and optical properties of a GaN-based p-n-diode

Greczmiel, Luca; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Eisele, Holger; Dempewolf, Anja; Petzold, Silke; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 44.7 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]

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Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Hagedorn, Sylvia; Kolbe, Tim; Schmidt, Gordon; Bertram, Frank; Netzel, Carsten; Knauer, Arne; Veit, Peter; Christen, Jürgen; Weyers, Markus

In: Applied physics letters - Melville, NY : American Inst. of Physics, Bd. 124 (2024), Heft 6, Artikel 063506, insges. 8 S.

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(Late news) characterization of the space-charge region of a GaN pn-junction and pin-drift-diode using EBIC and CL

Eisele, Holger; Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Christen, Jürgen; Dadgar, Armin; Berger, Christoph; Strittmatter, André; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei; Faber, Samuel; Witzigmann, Bernd

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 116-117, Artikel W04

Origin of the parasitic luminescence of 235 nm UVC LEDs grown on MOVPE-AIN and high-tempertatur-annealed AIN templates

Hagedorn, Sylvia; Kolbe, Tim; Schmidt, Gordon; Veit, Peter; Netzle, Carsten; Bertram, Frank; Knauer, Arne; Christen, Jürgen; Weyers, Markus

In: DGKK/DEMBE 2023 - Stuttgart : Universität, S. 85

Epitaxial growth of GaN buffer layers on Si(111) by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 7.6

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Advanced cathodoluminescence microscopy of a cascaded InGaN/GaN LED

Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wein, Konstantin; Christen, Jürgen; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 57, Artikel M07

Carrier capture into individual InP quantum dots directly imaged by nanoscale cathodoluminescence microscopy

Bertram, Frank; Schmidt, Gordon; Christen, Jürgen; Veit, Peter; Kernchen, Julie; Schürmann, Hannes; Jetter, Michael; Cutuk, Ana; Michler, Peter

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 158-159, Artikel jj01

Cubic GaN epilayers grown by remote epitaxy on graphene covered 3C-SiC (001)/Si(001) substrates

Littmann, Mario; August, Olga; Harnisch, Karsten; Halle, Thorsten; Bertram, Frank; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel TuP-GR-7

Optical an structural characterization of an 'AlInN/GaN-based longitudinal photonic bandgap crystal laser structure

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-4

GaN quantum dots in resonant cavity micropillars as deep UV single photon sources

Christen, Jürgen; Schuermann, Hannes; Bertram, Frank; Schmidt, Gordon; August, Olga; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Gao, Kong; Holmes, Marc; Arakawa, Yasuhiko

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-2

Optical Nano-Charakterization of a Cascaded InGaN/GaN LED

Bertram, Frank; Schmidt, Gordon; Veit, Peter; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH3-2

Highly spatially resolved STEM-CL characterization of GaN–based power devices

Bertram, Frank; Schmidt, Gordon; Christen, Jürgen

In: CSW 2023 - Jeju, Korea, S. 96, Artikel TuB3-1

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Optical and structural nano-characterization of GaN-based power devices

Christen, Jürgen; Schmidt, Gordon; Bertram, Frank; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei

In: Proceedings of SPIE - Bellingham, Wash. : SPIE, Bd. 12421 (2023)

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Nano-characterization of a space-charge region in a pn-diode with long drift layer: detailed cathodoluminescence and EBIC correlation

Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Faber, Samuel; Witzigmann, Bernd; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei; Debald, Arne

In: Proceedings of SPIE - Bellingham, Wash. : SPIE, Bd. 12421 (2023)

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Vertical and lateral carrier transport into InP quantum dots of a membrane external-cavity surface-emitting laser structure

Schmidt, Gordon; Bertram, Frank; Veit, Peter; Kernchen, Julie; Christen, Jürgen; Ćutuk, Ana; Jetter, Michael; Michler, Peter

In: Proceedings of SPIE - Bellingham, Wash. : SPIE, Bd. 12421 (2023)

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Interaction of catalysts for unitized regenerative fuel cells

Maletzko, Annabelle; Gomez Villa, Eduardo Daniel; Kintzel, Birgit; Fietzek, Harald; Schmidt, Gordon; Christen, Jürgen; Veit, Peter; Kühne, Philipp; Melke, Julia

In: ECS transactions / Electrochemical Society - Pennington, NJ, Bd. 112 (2023), Heft 4, S. 185-197

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Nitride semiconductors

Kneissl, Michael; Christen, Jürgen; Hoffmann, Axel; Monemar, Bo; Wernicke, Tim; Schwarz, Ulrich; Haglund, Åsa; Meneghini, Matteo

In: Physica status solidi. A, Applications and materials science - Weinheim : Wiley-VCH, Bd. 220 (2023), Heft 16, Artikel 2300484

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Sputter epitaxy of AlN and GaN on Si(111)

Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: Physica status solidi / A - Weinheim : Wiley-VCH, Bd. 220 (2023), Heft 8, Artikel 2200609, insges. 6 S.

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Influence of space-charge region on luminescence in lateral GaN superjunction

Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Debald, A.; Heuken, M.; Zweipfennig, T.; Kalisch, H.; Vescan, A.

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 85

Nanoscale characterization of novel AlGaN/GaN-based nanostructures

Christen, Jürgen; Bertram, Frank; Schmidt, Gordon

In: 4th International Workshop on UV Materials and Devices, IWUMD 2022 - Jeju, Korea, 2022 . - 2022

Growth of epitaxial GaN by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 609, Artikel PP 266

Sputtering eptiaxy of transition metal nitrides and AlScN

Lüttich, Christoph; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Dempewolf, Anja; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 599, Artikel PP 256

Epitaxy of high quality AlN and AlGaN layers on Si(111) by reactive pulsed sputtering

Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 28, Artikel AT 018

Direct probing of the internal electrical field of a pn-GaN-junction

Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Debald, A.; Heuken, M.; Zweipfennig, T.; Kalsich, H.; Vescan, A.

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 33

Influence of space-charge region on luminescence in a lateral GaN superjunction

Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Debald, A.; Heuken, M.; Zweipfennig, T.; Kalsich, H.; Vescan, A.

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 291

Direct identification of the 2DEG emission of a eterostructure field-effect transistor

Bertram, Frank; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Debald, A.; Heuken, M.; Zweipfennig, T.; Kalsich, H.; Vescan, A.

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 140, Artikel AT 022

2DEG emission in an AlGaN/GaN HFET

Schmidt, Gordon; Bertram, Frank; Veit, Peter; Christen, Jürgen; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei

In: The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022) - Taoyuan, 2022 . - 2022

Optical nano-characterization of a lateral GaN superjunction

Bertram, Frank; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei

In: The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022) - Taoyuan, 2022 . - 2022

Laser-assisted local eptiaxy of ///-V compound semiconductors

Trippel, Max; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022

Heavily Ge-doped GaN films - properties and applications

Berger, Christoph; Neugebauer, S.; Dadgar, Armin; Schürmann, H.; Bläsing, Jürgen; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 112

Nano-characterization of structural and optical properties of an AlGaN/GaN HFET - direct identification of 2DEG emission

Bertram, Frank; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 35

GaN quantum dots in vertical resonant cavity structure

Schürmann, Hannes; Berger, Christoph; Kang, Gao; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Holmes, Mark; Christen, Jürgen

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 720

Influence of space-charge region on luminescence in a lateral GaN superjunction

Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

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Growth of epitaxial GaN by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

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Metal micro-contacts deposited by focused electron and ion beam - impact on electrical properties

Wein, Konstantin; Schmidt, Gordon; Bertram, Frank; Petzold, Silke; Veit, Peter; Berger, Christoph; Strittmatter, André; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

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Sputter epitaxy of AlN and GaN on Si for device applications

Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Lüttich, Christopher; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: Konferenz: 2022 Compound Semiconductor Week, CSW, Ann Arbor, MI, USA, 01-03 June 2022, 2022 Compound Semiconductor Week (CSW) - Piscataway, NJ: IEEE . - 2022

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Laser-assisted local metalorganic vapor phase epitaxy

Trippel, Max; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: Review of scientific instruments - [S.l.]: American Institute of Physics, Bd. 93 (2022), insges. 14 S.

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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Sana, Prabha; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 61 (2022), 1, insges. 7 S.

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Desorption induced formation of low-density GaN quantum dots - nanoscale correlation of structural and optical properties

Schürmann, Hannes; Schmidt, Gordon; Bertram, Frank; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 14, Artikel 145102, insges. 7 S.

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Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors

Challa, S. R.; Witte, Hartmut; Schmidt, Gordon; Bläsing, Jürgen; Vega, N.; Kristukat, C.; Müller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, André

In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 11, Artikel 115107, insges. 7 S.

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MOVPE-grown optoelectronic devices with GaN:Mg/GaN:Ge tunnel junctions

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG . - 2022

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Characteristic emission from quantum dot-like intersection nodes of dislocations in GaN

Shapenkov, S. V.; Vyvenko, O. F.; Schmidt, Gordon; Bertram, Frank; Metzner, Sebastian; Veit, Peter; Christen, Jürgen

In: Journal of physics / Conference Series - Bristol: IOP Publ., 2004, Bd. 1851 (2021)

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Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy

Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 571 (2021), insges. 4 S.

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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

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Nitride microcavities and single quantum dots for classical and non-classical light emitters

Schmidt, Gordon; Berger, Christoph; Dadgar, Armin; Bertram, Frank; Veit, P.; Metzner, Susanne; Strittmatter, André; Christen, Jürgen; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)

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Optical and structural properties of nitride based nanostructures

Bertram, Frank; Berger, Christoph; Christen, Jürgen; Eisele, Holger; Greif, Ludwig A. Th.; Hoffmann, Axel; Maultzsch, Janina; Müller, Marcus; Poliani, Emanuele; Schmidt, Gordon; Veit, Peter; Wagner, Markus R.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 135-201 - (Springer series in solid-state sciences; 194)

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Color-tunable 3D InGaN/GaN multi-quantum-well light-emitting-diode based on microfacet emission and programmable driving power supply

Wang, Lai; Wang, Xun; Bertram, Frank; Sheng, Bowen; Hao, Zhibiao; Luo, Yi; Sun, Changzheng; Xiong, Bing; Han, Yanjun; Wang, Jian; Li, Hongtao; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Wang, Xinqiang

In: Advanced optical materials - Weinheim: Wiley-VCH . - 2020[Online first]

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Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Sheng, Bowen; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Müller, Marcus; Wang, Ping; Sun, Xiaoxiao; Qin, Zhixin; Shen, Bo; Wang, Xinqiang; Christen, Jürgen

In: Applied physics letters - Melville, NY : American Inst. of Physics - Volume 117(2020), article 133106, 6 Seiten

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Individually resolved luminescence from closely stacked GaN/AlN quantum wells

Sheng, Bowen; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wang, Yixin; Wang, Tao; Rong, Xin; Chen, Zhaoying; Wang, Ping; Bläsing, Jürgen; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Qin, Zhixin; Strittmatter, André; Shen, Bo; Christen, Jürgen; Wang, Xinqiang

In: Photonics research - Washington, DC : OSA, Bd. 8 (2020), Heft 4, S. 610-615

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AlGaN-based deep UV LEDs grown on high temperature annealed epitaxially laterally overgrown AlN/sapphire

Susilo, N.; Ziffer, E.; Cancellara, L.; Metzner, Sebastian; Belde, B.; Bertram, Frank; Walde, S.; Sulmoni, L.; Guttmann, M.; Wernicke, T.; Christen, Jürgen; Albrecht, M.; Weyers, M.; Kneisel, M.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.11[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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Growth of desorption-induced GaN quantum-dots

Berger, Christoph; Schmidt, Gordon; Schürmann, Hannes; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André; Kalinoswki, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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1D photonic bandgap structures for high-power GaN/InGaN laser divices

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Deckert, M.; Witte, Hartmut; Christen, Jürgen; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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Small-area current injection in GaN-based light emitters with tunnel junctions

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, Andrée-Woo

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack

Sheng, B.; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Bläsing, Jürgen; Miyake, H.; Li, H.; Qin, Z.; Strittmatter, André; Christen, Jürgen; Shen, B.; Wang, X.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)

Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.; Debray, M.; Schmidt, Gordon; Christen, Jürgen; Hörich, Florian; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties

Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, Marc-Peter; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK - Dresden . - 2019

Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Witte, Hartmut; Christen, Jürgen; Strittmatter, André

In: Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019, 13th International Conference on Nitride Semiconductors - Washington . - 2019

Characterization of 3D semiconductor nanostructures using ultra-high-resolution STEM-CL at He-temperatures

Christen, Jürgen

In: SFU spezial seminar 2019: Vancouver, Canada, July, 23, 2019 - Vancouver: Simon Fraser University Department of Physics[Seminar: SFU spezial seminar 2019, Vancouver, Canada, July, 23, 2019]

Characterization of 3D semiconductor nanostructures using ultra-high-resolution STEM-CL

Christen, Jürgen; Schmidt, Gordon; Bertram, Frank; Veit, Peter

In: EUROMAT 2019 - European Congress and Exhibition on Advanced Materials and Processes: 1-5 September 2019, Stockholm, Sweden ; abstract book - Stockholm, S. 108

Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations

Schmidt, Gordon; Veit, Peter; Metzner, Sebastian; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP XVIII, Berlin, September, 8-12, 2019, Microscopy and microanalysis - New York, NY : Cambridge University Press, Bd. 22 (2019), S. 602-603

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Probing the homogeneity of an In-rich InGaN layer by nanoscale cathodoluminescence

Sheng, B.; Zheng, X.; Schmidt, Gordon; Veit, Peter; Wang, P.; Bertram, Frank; Chen, Z.; Christen, Jürgen; Shen, B.; Wang, X.

In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Volume 10918 (2019), article 109180L

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Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)

Schuermann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, Stefan; Callsen, Gordon; Jagsch, Stefan; Wagner, Markus; Hoffmann, Axel

In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)

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Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs

Vega, Nahuel A.; Dadgar, Armin; Strittmatter, André; Challa, Seshagiri Rao; Ferreyra, Romualdo A.; Kristukat, Christian; Muller, Nahuel A.; Debray, Mario E.; Schmidt, Gordon; Witte, Hartmut; Christen, Jürgen

In: IEEE transactions on nuclear science : a publication of the IEEE Nuclear and Plasma Sciences Society / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 66.2019, 12, S. 2417-2421

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Ordered arrays of defect-free GaN nanocolumns with very narrow excitonic emission line width

Fernando-Saavedra, A.; Albert, S.; Bengoechea-Encabo, A.; Lopez-Romero, D.; Niehle, M.; Metzner, Sebastian; Schmidt, Gordon; Bertram, Frank; Sánchez-García, M. A.; Trampert, A.; Christen, Jürgen; Calleja, E.

In: Journal of crystal growth - Amsterdam [u.a.] : Elsevier - Volume 525 (2019), article 125189

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Nanoscale mapping of carrier recombination in GaAs/AlGaAs core-multishell nanowires by cathodoluminescence imaging in a scanning transmission electron microscope

Müller, Marcus; Bertram, Frank; Veit, Peter; Loitsch, Bernhard; Winnerl, Julia; Matich, Sonja; Finley, Jonathan J.; Koblmüller, Gregor; Christen, Jürgen

In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 115, issue 24 (2019), article 243102

Publikationslink

Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film

Sheng, Bowen; Bertram, Frank; Zheng, Xiantong; Wang, Ping; Schmidt, Gordon; Veit, Peter; Bläsing, Jürgen; Chen, Zhaoying; Strittmatter, André; Christen, Jürgen; Shen, Bo; Wang, Xinqiang

In: Japanese journal of applied physics - Bristol: IOP Publ., Volume 58, issue 6 (2019), article 065503, insgesamt 6 Seiten

Publikationslink

Untersuchungen von Inhomogenitäten und kompositionellen Gradienten in Cu(In, Ga)Se2 mittels hoch orts-, hoch spektral- und hoch zeitaufgelöster Kathodolumineszenz

Müller, Mathias; Christen, Jürgen

In: Magdeburg, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2019, 115 Seiten [Literaturverzeichnis: Seite 103-114]

Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)

Challa, Seshagiri Rao; Vega, N.; Kristukat, Ch.; Debrey, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Kerstin; Christen, Jürgen; Dadgar, Armin; Strittmatter, André

In: 9th Wide Band Gap Semiconductor and Components Workshop: 8-9th October 2018, ECSAT, Harwell, UK - Noordwijk: ESA-ESTEC, 2018, 2018, Devises 2[Workshop: 9th Wide Band Gap Semiconductor and Components Workshop, Harwell, UK, 8 - 9 October 2018]

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Direct comparison of structural and optical properties of GaN fin LED microstructure with nonpolar sidewalls

Schmidt, Gordon; Veit, Peter; Petzold, Silke; Dempewolf, Anja; Hempel, Thomas; Bertram, Frank; Harmann, J.; Zhou, H.; Steib, F.; Ledig, J.; Fündling, S.; Wehmann, H.-H.; Waag, A.; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL 27.6[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

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Deep ultraviolet light source from ultra-confined GaN quantum wells grown on thermally annealed AlN template

Wang, Y.; Wang, X.; Qin, Z.; Guo, S.; Bertram, Frank; Christen, Jürgen; Ivanov, S. V.; Miyake, H.; Kozlovsky, V. I.; Li, H.; Rong, X.; Chen, Z.; Wang, T.; Sheng, B.; Shen, B.

In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures

Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

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Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping

Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Wagner, Markus R.; Maultzsch, Janina; Dadgar, Armin; Strittmatter, André

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Microstructure of GaN fin LEDs: characterization of Structural and Optical Properties by STEM-CL

Schmidt, Gordon; Bertram, Frank; Veit, Peter; Hempel, Thomas; Hartmann, J.; Steib, F.; Zhou, H.; Ledig, J.; Fündling, S.; Wehmann, H.-H.; Waag, A.; Christen, Jürgen

In: OPIC 2018: Optics & Photonics International Congress, 23-27 April 2018, Pacifica Yokohama, Yokohama, Japan : congress programm - Yokohama, 2018 . - 2018, S. 105

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Nanoscale investigation of GaN / AlN quantum dot formation

Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Cathodoluminescence investigations of the uniformity of monolayer-thick (In,Ga)N quantum wells

Anikeeva, M.; Schulz, T.; Chèze, C.; Calarco, R.; Jahn, U.; Wolny, P.; Sawicka, M.; Siekacz, M.; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Albrecht, M.

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

InGaN still to be discovered

Anikeeva, M.; Schulze, T.; Lymperakis, L.; Freysoldt, C.; Wolny, P.; Sawicka, M.; Cheze, C.; Bertram, Frank; Schmidt, Gordon; Mahler, F.; Tomm, J.; Skierbiszewski, C.; Christen, Jürgen; Neugebauer, J.; Albrecht, M.

In: International Symposium on Growth of III-Nitrides, ISGN-7: August 5-10, 2018, Warsaw, Poland : [book of abstract] - Warsaw, 2018, 2018, Abstract Fr1.1[Symposium: International Symposium on Growth of III-Nitrides, ISGN-7, Warsaw, Poland, August 5-10, 2018]

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Nanoscale structural and optical properties of deep UV-emitting GaN/AlN MQW-stack

Sheng, B.; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Miyake, H.; Li, H.; Guo, S.; Qin, Z.; Christen, Jürgen; Wang, Z.; Shen, B.

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation

Challa, Seshagiri Rao; Vega, Nahuel; Kristukat, Christian; Müller, N. A.; Dabray, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors

Schmidt, Gordon; Veit, Peter; Schürmann, Hannes; Petzold, Silke; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping

Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Poliani, E.; Wagner, M. R.; Maultzsch, J.; Dadgar, Armin; Strittmatter, André; Hoffmann, A.; Christen, Jürgen

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, H.; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Hoffmann, A.

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Cathodoluminescence characteristics of high indium contenting InGaN film

Sheng, B.; Zheng, X.; Liang, H.; Wang, P.; Bertram, Frank; Chen, Z.; Christen, Jürgen; Wang, X.; Shen, B.

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy

Berger, Christoph; Neugebauer, Silvio; Seneza, C.; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S.; Hoffmann, A.

In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Correlation of structural and optical properties of GaN/AlN quantum disks embedded in nanowires by highly spatially cathodoluminescence microscopy

Sheng, B.; Bertram, Frank; Wang, P.; Sun, X.; Schmidt, Gordon; Müller, M.; Veit, Peter; Hempel, Thomas; Christen, Jürgen; Wang, X.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL 22.3[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

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Desorption induced formation of deep UV-emitting nanostructures

Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Kalinowski, S.; Callsen, G.; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.; Christen, Jürgen

In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Nanoscale investigation of a deep UV-emitting GaN/AlN quantum well stack

Sheng, B.; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Miyake, H.; Li, H.; Guo, S.; Qin, Z.; Christen, Jürgen; Shen, B.; Wang, X.

In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Growth of sp2-BN thin films by MBE: effect of post thermal annealing

Liu, F.; Rong, X.; Wang, T.; Sheng, B.; Zheng, X.; Sheng, S.; Bertram, Frank; Christen, Jürgen; Xu, F.; Shen, B.; Wang, X.

In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation

Bertram, Frank; Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018[Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]

Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates

Ding, K.; Avrutin, V.; Izyumskaya, N.; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Ozgur, U.; Morkoc, H.

In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Vol. 10532.2018, Art. 1053208

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Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod

Bertram, Frank; Müller, Marcus; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Christen, Jürgen; Hartmann, Jana; Zhou, Hao; Wehmann, H.-H.; Waag, Anadreas

In: Proceedings of SPIE/ SPIE - Bellingham, Wash.: SPIE, 1963, Vol. 10532.2018, Art. 105321E[SPIE OPTO, 2018, San Francisco, California, United States, 27 January - 1 February 2018]

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A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy

Hogan, Kasey; Metzner, Sebastian; Bertram, Frank; Mahaboob, Isra; Rocco, Emma; Shahedipour-Sandvik, F.; Dempewolf, Anja; Christen, Jürgen

In: Proceedings of SPIE/ SPIE - Bellingham, Wash.: SPIE, 1963, Vol. 10532.2018, Art. 105320V[SPIE OPTO, 2018, San Francisco, California, United States, 27 January - 1 February 2018]

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Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods

Schmidt, Gordon; Müller, Marcus; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-Heinrich; Waag, Andreas; Christen, Jürgen

In: Scientific reports - [London]: Macmillan Publishers Limited, part of Springer Nature, 2011, 2018, Artikelnummer 16026, insgesamt 8 Seiten

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Nanocharakterisierung optischer und struktureller Eigenschaften von GaN-basierten Nano- und Mikrosäulen

Müller, Marcus; Christen, Jürgen

In: Magdeburg, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2018, 182 Seiten [Literaturverzeichnis: Seite 161-178]

Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy

Hestroffer, Karine; Lund, Cory; Koksaldi, Onur; Li, Haoran; Schmidt, Gordon; Trippel, Max; Veit, Peter; Bertram, Frank; Lu, Ning; Wang, Qingxiao; Christen, Jürgen; Kim, Moon J.; Mishra, Umesh K.; Keller, Stacia

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 465.2017, S. 55-59

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Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-Like InGaN/GaN nanowires

Gačević, Žarko; Holmes, Mark; Chernysheva, Ekaterina; Müller, Marcus; Torres-Pardo, Almudena; Veit, Peter; Bertram, Frank; Christen, Jürgen; González Calbet, José María; Arakawa, Yasuhiko; Calleja, Enrique; Lazić, Snežana

In: ACS photonics - Washington, DC: ACS, 2014, Bd. 4.2017, 3, S. 657-664

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Effect of nano-porous SiNx interlayer on propagation of extended defects in semipolar (1122)-orientated GaN

Monavarian, Morteza; Izyumskaya, Natalia; Müller, Mathias; Metzner, Sebastian; Veit, Peter; Das, Saikat; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis; Avrutin, Vitaly

In: Physica status solidi / C : pss - Berlin : Wiley-VCH, Vol. 14.2017, 8, Art. 1700024, insgesamt 5 S. [Special Issue: 9 International Workshop on Nitride Semiconductors (IWN2016)]

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Selective area growth of AlN/GaN nanocolumns on (0001) and (1122) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates

Bengoechea-Encabo, A; Albert, S.; Müller, Mathias; Xie, M.-Y.; Veit, Peter; Bertram, Frank; Sanchez-Garcia, M. A.; Zúñiga-Pérez, J.; Mierry, P.; Christen, Jürgen; Calleja, E.

In: Nanotechnology - Bristol : IOP Publ, Vol. 36.2017, 36, Art. 365704, insgesamt 6 S.

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Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Müller, Mathias; August, Olga; Bertram, Frank; Christen, Jürgen; Jin, Peng; Liu, Mohan; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang

In: Scientific reports - [London] : Macmillan Publishers Limited, part of Springer Nature - Vol. 7.2017, Art. 46420, insgesamt 6 S.

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Hoch orts-zeitaufgelöste optische Untersuchungen zum exzitonischen Transport in GaN und ZnO

Noltemeyer, Martin; Christen, Jürgen

In: Magdeburg, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2017, x, 161 Seiten, Illustrationen, Diagramme, 30 cm [Literaturverzeichnis: Seite 155-162]

Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells

Leute, Robert A. R.; Heinz, Dominik; Wang, Yunjun; Meisch, Tobias; Müller, Mathias; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Christen, Jürgen; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Jenisch, Stefan; Strehle, Steffen; Rettig, Oliver; Thonke, Klaus; Scholz, Ferdinand

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 180-185

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Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

Mohajerani, Martin Sadat; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

In: Japanese journal of applied physics - Bristol: IOP Publ, 1962, Vol. 55.2016, 5S, Art. 05FJ09, insgesamt 5 S.

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Clustered quantum dots in single GaN islands formed at threading dislocations

Schmidt, Gordon; Veit, Peter; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.

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Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)

Müller, Marcus; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Krylyuk, Sergiy; Debnath, Ratan; Ha, Jong-Yoon; Wen, Baomei; Blanchard, Paul; Motayed, Abhishek; King, Matthew R.; Davydov, Albert V.; Christen, Jürgen

In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF02, insgesamt 6 S.

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Improvement of optical quality of semipolar (1122) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth

Monavarian, Morteza; Izyumskaya, Natalia; Müller, Marcus; Metzner, Sebastian; Veit, Peter; Can, Nuri; Das, Saikat; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis; Avrutin, Vitaly

In: Journal of applied physics - Melville, NY: American Inst. of Physics, 1931, Vol. 119.2016, 14, Art. 145303, insgesamt 7 S.

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Phosphor-converted white light from blue-emitting InGaN microrod LEDs

Schimpke, Tilman; Mandl, Martin; Stoll, Ion; Pohl-Klein, Bianca; Bichler, Daniel; Zwaschka, Franz; Strube-Knyrim, Johanna; Huckenbeck, Barbara; Max, Benjamin; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Hartmann, Jana; Waag, Andreas; Lugauer, Hans-Jürgen; Strassburg, Martin

In: Physica status solidi / A - Weinheim: Wiley-VCH, 1970, Bd. 213.2016, 6, S. 1577-1584

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Nanoscopic insights into InGaN/GaN core-shell nanorods - structure, composition, and luminescence

Müller, Markus; Veit, Peter; Krause, Florian F.; Schimpke, Tilman; Metzner, Sebastian; Bertram, Frank; Mehrtens, Thorsten; Müller-Caspary, Knut; Avramescu, Adrian; Strassburg, Martin; Rosenauer, Andreas; Christen, Jürgen

In: Nano letters: a journal dedicated to nanoscience and nanotechnology - Washington, DC: ACS Publ., 2001, Bd. 16.2016, 9, S. 5340-5346

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Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization

Loitsch, Bernhard; Müller, Marcus; Winnerl, Julia; Veit, Peter; Rudolph, Daniel; Abstreiter, Gerhard; Finley, Janathan J.; Bertram, Frank; Christen, Jürgen; Koblmüller, Gregor

In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges, 1999, Bd. 18.2016, 6, insges. 11 S.

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Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires

Gačević, Ž.; Vukmirović, N.; García-Lepetit, N.; Torres-Pardo, A.; Müller, M.; Metzner, Sebastian; Albert, S.; Bengoechea-Encabo, A.; Bertram, Frank; Veit, Peter; Christen, Jürgen; González-Calbet, J. M.; Calleja, E.

In: Physical review - Woodbury, NY: Inst., 2016, Vol. 93.2016, 12-15, Art. 125436

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Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 440.2016, S. 6-12

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Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN

Schmidt, Gordon; Veit, Peter; Wieneke, Matthias; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Jürgen

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 73-77

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Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Neugebauer, Silvio; Metzner, Sebastian; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 118-125

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Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope

Müller, Marcus; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Leute, Robert Anton Richard; Heinz, Dominic; Wang, Junjun; Meisch, Tobias; Scholz, Ferdinand; Christen, Jürgen

In: Physica status solidi - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 112-117

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Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells

Wagner, J.; Wächter, C.; Wild, J.; Müller, M.; Metzner, Sebastian; Veit, Peter; Schmidt, Gordon; Jetter, M.; Bertram, Frank; Zweck, J.; Christen, Jürgen; Michler, P.

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 67-72

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Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire

Metzner, Sebastian; Bertram, Frank; Hempel, Thomas; Meisch, Tobias; Schwaiger, Stephan; Scholz, Ferdinand; Christen, Jürgen

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 54-60

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Gallium gradients in Cu(In,Ga)Se2 thin-film solar cells

Witte, Wolfram; Abou-Ras, Daniel; Albe, Karsten; Bauer, Gottfried H.; Bertram, Frank; Boit, Christian; Brüggemann, Rudolf; Christen, Jürgen; Dietrich, Jens; Eicke, Axel

In: Progress in photovoltaics: research and applications - Chichester: Wiley, 1993, Bd. 23.2015, 6, S. 717-733[Article first published online: 28 MAR 2014]

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Spatially resolved optical emission of cubic GaN/AIN multi-quantum well structures

As, D. J.; Kemper, R.; Mietze, C.; Wecker, T.; Lindner, J. K. N.; Veit, Peter; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen

In: MRS online proceedings library - Warrendale, Pa: MRS, Bd. 1736.2015, S. 25-30

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Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Lazić, Snežana; Chernysheva, Ekaterina; Gačević, Žarko; García-Lepetit, Noemi; Meulen, Herko P.; Müller, Marcus; Bertram, Frank; Veit, Peter; Christen, Jürgen; Torres-Pardo, Almudena; González Calbet, José M.; Calleja, Enrique; Calleja, José M.

In: Proceedings of SPIE - Bellingham, Wash: SPIE, Bd. 9363 (2015)

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Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiN x interlayers

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Müller, Marcus; Okur, Sserdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

In: Proceedings of SPIE - Bellingham, Wash: SPIE, Bd. 9363 (2015)

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Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Monavarian, Morteza; Metzner, Sebastian; Izyumskaya, Natalia; Okur, Serdal; Zhang, Fan; Can, Nuri; Das, Saikat; Avrutin, Vitaliy; Özgür, Ümit; Bertram, Frank; Christen, Jürgen; Morkoç, Hadis

In: Proceedings of SPIE - Bellingham, Wash: SPIE, Bd. 9363.2015

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Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates

Okur, Serdal; Franke, Alexander; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Bertram, Frank; Christen, Jürgen; Özgür, Ümit

In: Proceedings of SPIE - Bellingham, Wash: SPIE, Bd. 9363.2015

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Determination of carrier diffusion length in GaN

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Gil, Bernard

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Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays

Chernysheva, E.; Gačević, Ž.; García-Lepetit, N.; Van Der Meulen, H. P.; Müller, M.; Bertram, Frank; Veit, Peter; Torres-Pardo, A.; González Calbet, J. M.; Christen, Jürgen; Calleja, E.; Calleja, J. M.; Lazić, S.

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Optical emission of individual GaN nanocolumns analyzed with high spatial resolution

Urban, Arne; Müller, Marcus; Karbaum, C.; Schmidt, Gordon; Veit, Peter; Malindretos, Joerg; Bertram, Frank; Christen, Jürgen; Rizzi, A.

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Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel

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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Lesnik, Andreas; Veit, Peter; Schmidt, Gordon; Hempel, Thomas; Christen, Jürgen; Krost, Alois; Strittmatter, André

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STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells

Kemper, R. M.; Veit, Peter; Mietze, C.; Dempewolf, Anja; Wecker, T.; Bertram, Frank; Christen, Jürgen; Lindner, J. K. N.; As, D. J.

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About the practical implementation of same time-of-flight measurements scheme in cathodoluminescence microscopy

Polyakov, A. N.; Noltemeyer, M.; Hempel, Thomas; Christen, Jürgen; Stepovich, M. A.

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Determination of carrier diffusion length in p- and n-type GaN

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Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si

Okur, S.; Izyumskaya, N.; Zhang, F.; Avrutin, V.; Metzner, Sebastian; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Morkoç, H.; Özgür, Ü.

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Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se 2 thin films

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Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy

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Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Schmidt, Gordon; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphael; Grandjean, Nicolas

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InGaN - direct correlation of nanoscopic morphology features with optical and structural properties

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Extended defects in GaN nanocolumns characterized by cathodoluminescence directly performed in a transmission electron microscope

Bertram, Frank; Müller, Marcus; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Urban, Arne; Malindretos, Joerg; Rizzi, Angela

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Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates

Izyumskaya, N.; Okur, S.; Zhang, F.; Avrutin, V.; Özgür, Ü.; Metzner, Sebastian; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Morkoc, H.

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GaN laser structure with semipolar quantum wells and embedded nanostripes

Leute, R. A. R.; Meisch, T.; Wang, J.; Biskupek, J.; Kaiser, U.; Muller, M.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Scholz, F.

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Growth and characterization of stacking fault reduced GaN(101̄3) on sapphire

Bläsing, Jürgen; Holý, Vaclav; Dadgar, Armin; Veit, Peter; Christen, Jürgen; Ploch, Simon; Frentrup, Martin; Wernicke, Tim; Kneissl, Michael; Krost, Alois

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Group III nitride coreshell nano- and microrods for optoelectronic applications

Mandl, Martin; Wang, Xue; Schimpke, Tilman; Kölper, Christopher; Binder, Michael; Ledig, Johannes; Waag, Andreas; Kong, Xiang; Trampert, Achim; Bertram, Frank; Christen, Jürgen; Barbagini, Francesca; Calleja, Enrique; Strassburg, Martin

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MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates

Ravash, Roghaiyeh; Dadgar, Armin; Bertram, Frank; Dempewolf, Anja; Metzner, Sebastian; Hempel, Thomas; Christen, Jürgen; Krost, Alois

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GaN-based vertical cavities with all dielectric reflectors by epitaxial lateral overgrowth

Okur, Serdal; Shimada, Ryoko; Zhang, Fan; Hafiz, Shopan Din Ahmad; Lee, Jaesoong; Avrutin, Vitaliy; Morkoç, Hadis; Franke, Alexander; Bertram, Frank; Christen, Jürgen; Özgür, Ümit

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Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1101) GaN revealed from spatially resolved luminescence

Okur, S.; Metzner, Sebastian; Izyumskaya, N.; Zhang, F.; Avrutin, V.; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Morkoç, H.; Özgür, Ü.

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Optical studies of strain and defect distribution in semipolar (1 1 01) GaN on patterned Si substrates

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Cathodoluminescence directly performed in a transmission electron microscope - nanoscale correlation of structural and optical properties

Christen, Jürgen; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Petzold, S.; Ravash, R.; Dadgar, Armin; Krost, A.

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An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of GaN based light-emitting diodes

Wang, Jiaxing; Wang, Lai; Wang, Lei; Hao, Zhibiao; Luo, Yi; Dempewolf, Anja; Müller, Mathias; Bertram, Frank; Christen, Jürgen

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Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR

Franke, Alexander; Bastek, B.; Sterling, Stefan; August, Olga; Petzold, Silke; Veit, Peter; Christen, Jürgen; Moser, P.; Wieneke, Matthias; Berger, Christoph; Bläsing, J.; Dadgar, Armin; Krost, Alois

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Optische Mikro-Charakterisierung von epitaktisch gewachsenem ZnO und ZnO-basierten Heterostrukturen

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Chemical gradients in Cu(In,Ga)(S,Se)2 thin-film solar cells - results of the GRACIS project

Witte, Wolfram; Powalla, Michael; Hariskos, D.; Eicke, A.; Botros, M.; Schock, H.-W.; Abou-Ras, D.; Mainz, R.; Rodríguez-Alvarez, H.; T., Unold.; Bauer, G. H.; Brüggemann, R.; Heise, S. J.; Neumann, O.; Meessen, M.; Christen, Jürgen; Bertram, Frank; Müller, Mathias; Klein, A.; Adler, T.; Albe, K.; Pohl, J.; Martin, M.; De Souza, R. A.; Nagarajan, L.; Beckers, T.; Boit, C.; Dietrich, J.; Hetterich, M.; Zhang, Z.; Scheer, R.; Kempa, H.; Orgis, T.

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Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)

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Semipolar GaInN quantum well structures on large area substrates

Scholz, Ferdinand; Schwaiger, Stephan; Däubler, Jürgen; Tischer, Ingo; Thonke, Klaus; Neugebauer, Silvio; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Lengner, Holger; Thalmair, Johannes; Zweck, Josef

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Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Franke, Alexander; Hempel, Thomas; Goldhahn, Rüdiger; Christen, Jürgen; Krost, Alois

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Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates

Izyumskaya, N.; Liu, S. J.; Avrutin, V.; Okur, S.; Zhang, F.; Özgür, Ü.; Morkoç, H.; Metzner, S.; Karbaum, Christopher; Bertram, Frank; Christen, Jürgen; Smith, D. J.

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Excitonic transport in ZnO

Noltemeyer, Martin; Bertram, Frank; Hempel, Thomas; Bastek, Barbara; Christen, Jürgen; Brandt, Matthias; Lorenz, Michael; Grundmann, Marius

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Heavy Si doping - the key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?

Wieneke, Matthias; Noltemeyer, Martin; Bastek, Barbara; Rohrbeck, Antje; Witte, Hartmut; Veit, Peter; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Krost, Alois

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MOVPE of CuGaSe 2 on GaAs in the presence of a Cu xSe secondary phase

Gütay, Levent; Larsena, Jes K.; Guillot, Jerome; Müller, Mathias; Bertram, Frank; Christen, Jürgen; Siebentritt, Susanne

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 315.2011, 1, S. 82-86

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Eliminating stacking faults in semi-polar GaN by AlN interlayers

Dadgar, Armin; Ravash, Roghaiyeh; Veit, Peter; Schmidt, G.; Müller, Mathias; Dempewolf, Anja; Bertram, Frank; Wieneke, Matthias; Christen, Jürgen; Krost, Alois

In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021905, insgesamt 3 S.

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Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (112̄2) and (101̄1) pyramid facets

Metzner, Sebastian; Bertram, Frank; Karbaum, Christopher; Hempel, Thomas; Wunderer, Thomas; Schwaiger, Stephan; Lipski, Frank; Scholz, Ferdinand; Wächter, Clemens; Jetter, Michael; Michler, Peter; Christen, Jürgen

In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 632-637

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High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets

Wächter, Clemens; Meyer, Alexander; Metzner, Sebastian; Jetter, Michael; Bertram, Frank; Christen, Jürgen; Michler, Peter

In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 605-610

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Three-dimensional GaN for semipolar light emitters

Wunderer, T.; Feneberg, Martin; Lipski, F.; Wang, J.; Leute, R. A. R.; Schwaiger, S.; Thonke, K.; Chuvilin, A.; Kaiser, U.; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Beirne, G. J.; Jetter, M.; Michler, P.; Schade, L.; Vierheilig, C.; Schwarz, U. T.; Dräger, A. D.; Hangleiter, A.; Scholz, F.

In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 549-560

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Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

Jönen, Holger; Rossow, Uwe; Bremers, Heiko; Hoffmann, Lars; Brendel, Moritz; Dräger, Alexander Daniel; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Schwaiger, Stephan; Scholz, Ferdinand; Thalmair, Johannes; Zweck, Josef; Hangleiter, Andreas

In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 600-604

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Stress relaxation in low-strain AlInN/GaN bragg mirrors

Moser, Pascal; Bläsing, Jürgen; Dadgar, Armin; Hempel, Thomas; Christen, Jürgen; Krost, Alois

In: Japanese journal of applied physics: JJAP - Tokyo: IOP Publ, 50.2011, 3, Art. 031002, insgesamt 6 S.

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Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror

Franke, Alexander; Bastek, B.; Krimmling, J.; Christen, Jürgen; Moser, Pascal; Dadgar, Armin; Krost, Alois

In: Superlattices and microstructures: a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces - Oxford [u.a.]: Elsevier Science, Academic Press, Bd. 49.2011, 3, S. 187-192[Special issue: Proceedings of the 10th International Conference on the Physics of LightMatter Coupling in Nanostructures, PLMCN 2010 (Cuernavaca, Mexico), 12-16 April, 2010]

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Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

Ravash, Roghaiyeh; Bläsing, Jürgen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Jürgen; Krost, Alois

In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 594-599

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Growth and coalescence behavior of semipolar (112̄2) GaN on pre-structured r-plane sapphire substrates

Schwaiger, Stephan; Metzner, Sebastian; Wunderer, Thomas; Argut, Ilona; Thalmair, Johannes; Lipski, Frank; Wieneke, Matthias; Bläsing, Jürgen; Bertram, Frank; Zweck, Josef; Krost, Alois; Christen, Jürgen; Scholz, Ferdinand

In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 588-593

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StranskiKrastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures

Krost, Alois; Berger, C.; Moser, Pascal; Bläsing, Jürgen; Dadgar, Armin; Hums, C.; Hempel, Thomas; Bastek, Barbara; Veit, Peter; Christen, Jürgen

In: Semiconductor science and technology - Bristol: IOP Publ., Bd. 26.2011, 1, insges. 8 S.

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Epitaxial lateral overgrowth of non-polar GaN(1 1 ̄0 0) on Si(1 1 2) patterned substrates by MOCVD

Izyumskaya, N.; Liu, S. J.; Avrutin, V.; Ni, X. F.; Wu, M.; Özgür, Ü.; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Zhou, L.; Smith, David J.; Morkoça, H.

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 314.2011, 1, S. 129-135

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Improving GaN-on-silicon properties for GaN device epitaxy

Dadgar, Armin; Hempel, Thomas; Bläsing, Jürgen; Schulz, O.; Fritze, Stephanie; Christen, Jürgen; Krost, Alois

In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1503-1508[Special Issue: 3rd International Symposium on Growth of Group III-Nitrides (ISGN 3) E-MRS 2010 Spring Meeting Symposium G: Physics and Applications of Novel Gain Materials Based on IIIVN Compounds 14th International Conference on High Pressure Semiconductor Physics (HPSP14)]

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Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains

Bastek, Barbara; August, Olga; Hempel, Thomas; Christen, Jürgen; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Wendt, Ulrich

In: Applied physics letters. - Melville, NY : AIP; 96.2010, 17, Art. 172102, insges. 3 S.

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Three-dimensional GaN for semipolar light emitters

Wunderer, Thomas; Feneberg, Martin; Lipski, Frank; Wang, Junjun; Leute, Robert; Schwaiger, Stephan; Thonke, Klaus; Chuvilin, Andrei; Kaiser, Ute; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Beirne, Gareth; Jetter, Michael; Michler, Peter; Schade, Lukas; Vierheilig, Clemens; Schwarz, Ulrich; Dräger, Alexander; Hangleiter, Andreas; Scholz, Ferdinand

In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, insges. 12 S., 2010

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Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator

Lin, Vivian K. X.; Tripathy, S.; Teo, S. L.; Dolmanan, S. B.; Dadgar, Armin; Noltemeyer, Martin; Franke, Alexander; Bertram, Frank; Christen, Jürgen; Krost, Alois

In: Electrochemical and solid-state letters: a joint publication of the Electrochemical Society and the Institute of Electrical and Electronics Engineers - Pennington, NJ: Soc., 13.2010, 10, S. H343-H345

GaInN-based LED structures on selectively grown semi-polar crystal facets

Scholz, Ferdinand; Wunderer, Thomas; Feneberg, Martin; Thonke, Klaus; Chuvilin, Andrei; Kaiser, Ute; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen

In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, 2010

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Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering

Krost, Alois; Berger, C.; Bläsing, Jürgen; Franke, Alexander; Hempel, Thomas; Dadgar, Armin; Christen, Jürgen

In: Applied physics letters. - Melville, NY : AIP, Bd. 97.2010, 18, S. 181105-1-181105-3

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Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates

Wunderer, T.; Wang, J.; Lipski, F.; Schwaiger, S.; Chuvilin, A.; Kaiser, U.; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Shirokov, S. S.; Yunovich, A. E.; Scholz, F.

In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 7/8, S. 2140-2143

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Light extraction from GaN-based LED structures on silicon-on-insulator substrates

Tripathy, S.; Teo, S. L.; Lin, V. K. X.; Chen, M. F.; Dadgar, Armin; Christen, Jürgen; Krost, Alois

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InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metalorganic vapour phase epitaxy

Reiher, F.; Dadgar, Armin; Bläsing, Jürgen; Wieneke, Matthias; Müller, M.; Franke, A.; Reißmann, L.; Christen, Jürgen; Krost, Alois

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MOVPE growth of high-quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV-LEDs

Saengkaew, Phannee; Dadgar, Armin; Bläsing, Jürgen; Bastek, Barbara; Bertram, Frank; Reiher, Fabian; Hums, Christoph; Noltemeyer, Martin; Hempel, Thomas; Veit, Peter; Christen, Jürgen; Krost, Alois

In: Physica status solidi / C - Berlin: Wiley-VCH . - 2009, insges. 4 S.

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Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy

Bastek, Barbara; Bertram, Frank; Christen, Jürgen; Hempel, Thomas; Dadgar, Armin; Krost, Alois

In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009, 3, insges. 3 S.

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Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

Ravash, Roghaiyeh; Bläsing, Jürgen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Jürgen; Krost, Alois

In: Applied physics letters / publ. by the American Institute of Physics - Melville, NY: AIP, Bd. 95.2009, 24, Art. 242101

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al x Ga 1-x N on Si (111)

Saengkaew, Phannee; Dadgar, Armin; Bläsing, Jürgen; Hempel, Thomas; Veit, Peter; Christen, Jürgen; Krost, Alois

In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 14, S. 3742-3748

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Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes - tubes, spirals, and curved sheets

Mei, Yongfeng; Thurmer, Dominic J.; Deneke, Christoph; Kiravittaya, Suwit; Chen, Yuan-Fu; Dadgar, Armin; Bertram, Frank; Bastek, Barbara; Krost, Alois; Christen, Jürgen; Reindl, Thomas; Stoffel, Mathieu; Coric, Emica; Schmidt, Oliver G.

In: American Chemical Society : ACS nano . - Washington, DC : ACS, Bd. 3.2009, 7, S. 1663-1668

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AllnN/GaN based multi quantum well structures - growth and optical proberties

Hums, Christoph; Gadanecz, Aniko; Dadgar, Armin; Bläsing, Jürgen; Lorenz, Pierre; Krischok, Stefan; Bertram, Frank; Franke, Alexander; Schäfer, Jürgen A.; Christen, Jürgen; Krost, Alois

In: Physica status solidi / C - Berlin: Wiley-VCH . - 2009, insges. 4 S.

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Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction

Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Christen, Jürgen; Krost, Alois

In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract

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Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers

Mäki, J.-M.; Tuomisto, F.; Bastek, Barbara; Bertam, Frank; Christen, Jürgen; Dadgar, Armin; Krost, Alois

In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 11, S. 2575-2577[Special Issue: 15th International Conference on Positron Annihilation (ICPA-15)]

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GaN-based deep green light emitting diodes on silicon-on-insulator substrates

Tripathy, S.; Dadgar, Armin; Zang, K. Y.; Lin, V. K. X.; Liu, Y. C.; Teo, S. L.; Yong, A. M.; Soh, C. B.; Chua, S. J.; Bläsing, Jürgen; Christen, Jürgen; Krost, Alois

In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 2, S. 822-825[Supplement: International Workshop on Nitride Semiconductors (IWN 2008)]

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Time-resolved cathodoluminescence of Mg-doped GaN

Fischer, A. M.; Srinivasan, S.; Ponce, F. A.; Monemar, B.; Bertram, Frank; Christen, Jürgen

In: Applied physics letters / publ. by the American Institute of Physics - Melville, NY: AIP, Bd. 93 (2008), 15, S. 151901-1-151901-3

Structural and optical proberties of nonpolar GaN thin films

Wu, Z. H.; Fischer, A. M.; Ponce, F. A.; Bastek, Barbara; Christen, Jürgen; Wernicke, T.; Weyers, M.; Kneisel, M.

In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 17, S. 171904-1-171904-3

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Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Fernández-Garrido, S.; Redondo-Cubero, A.; Gago, R.; Bertram, Frank; Christen, Jürgen; Luna, E.; Trampert, A.; Pereiro, J.; Muñoz, E.; Calleja, E.

In: Journal of applied physics / publ. of the American Institute of Physics, AIP. Elmer Hutchisson, ed - Melville, NY: AIP, Bd. 104 (2008), 8, S. 083510-1-083510-7

A-plane GaN epitaxial lateral overgrowth structures - growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy

Bastek, Barbara; Bertram, Frank; Christen, Jürgen; Wernicke, T.; Weyers, M.; Kneissl, M.

In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 21, insges. 3 S.

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MOVPE growth and characterization of AllnN FET structures on Si(1 1 1)

Hums, Christopher; Gadanecz, Aniko; Dadgar, Armin; Bläsing, Jürgen; Witte, Hartmut; Hempel, Thomas; Dietz, Annette; Lorenz, Pierre; Krischok, Stefan; Schäfer, Jürgen A.; Christen, Jürgen; Krost, Alois

In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates: symposium held March 24 - 28, 2008, San Francisco, California, U.S.A. ; [papers presented at Symposium C, "Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates", was held ... at the 2008 MRS spring meeting] / ed.: Tingkai Li ...: symposium held March 24 - 28, 2008, San Francisco, California, U.S.A. ; [papers presented at Symposium C, "Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates", was held ... at the 2008 MRS spring meeting] - Warrendale, Pa.: MRS, 2008; Li, Tingkai, 2008, Kap. 1068-C04-03, insges. 6 S. - (Materials Research Society symposium proceedings; 1068)Kongress: MRS Spring Meeting (San Francisco, Calif. : 2008.03.24-28)

MOVPE growth of blue In xGa 1-x/GaN LEDs on 150 mm Si(001)

Schulze, Fabian; Dadgar, Armin; Krtschil, André; Hums, Christoph; Reißmann, Lars; Diez, Annette; Christen, Jürgen; Krost, Alois

In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 5.2008, 6, S. 2238-2240

Zinc oxide and related materials - symposium held November 27 - 30, 2006, Boston, Massachusetts, U.S.A. ; [Symposium K, "Zinc Oxide and Related Materials", held ... at the 2006 MRS fall meeting]

Christen, Jürgen

In: Warrendale, Pa.: Materials Research Society, 2007; XV, 440 S.: Ill., graph. Darst. - (Materials Research Society symposium proceedings; 957), ISBN 978-1-558-99914-5Kongress: Symposium K: Zinc Oxide and Related Materials; (Boston, Mass.) : 2006.11.27-30MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Metal-organic vapor phase epitaxy and properties of AllnN in the whole compositional range

Hums, Christoph; Bläsing, Jürgen; Dadgar, Armin; Diez, Annette; Hempel, Thomas; Christen, Jürgen; Krost, Alois; Lorenz, K.; Alves, E.

In: Applied physics letters - Melville, NY: American Inst. of Physics, Bd. 90 (2007), S. 022105-1-022105-3

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Laser-interface lithography tailored for highly symmetrically arranged ZnO nanowire arrays

Kim, Dong Sik; Ji, Ran; Fan, Jin; Bertram, Frank; Scholz, Roland; Dadgar, Armin; Nielsch, Kornelius; Krost, Alois; Christen, Jürgen; Gösele, Ulrich; Zacharias, Margit

In: Small - Weinheim: Wiley-VCH, Bd. 3 (2007), 1, S. 76-80

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Epitaxy of GaN on silicon - impact of symmetry and surface reconstruction

Dadgar, Armin; Schulze, Fabian; Wienecke, M.; Gadanecz, A.; Bläsing, Jürgen; Veit, Peter; Hempel, Thomas; Diez, Annette; Christen, Jürgen; Krost, Alois

In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges., Bd. 9 (2007), 10, insges. 10 S.

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Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

Heinze, Sören; Krtschil, André; Bläsing, Jürgen; Hempel, Thomas; Veit, Peter; Dadgar, Armin; Christen, Jürgen; Krost, Alois

In: Journal of crystal growth / ed. N. Cabrera [u.a.] - Amsterdam [u.a.]: Elsevier, Bd. 300 (2007), 1, S. 170-175

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Homoepitaxy of ZnO - from the substrates to doping

Neumann, C.; Lautenschläger, S.; Graubner, S.; Sann, J.; Volbers, N.; Meyer, B. K.; Bläsing, Jürgen; Krost, Alois; Bertram, Frank; Christen, Jürgen

In: Physica status solidi: pss - Berlin: Wiley-VCH, Bd. 244 (2007), 5, S. 1451-1457

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Vapour transport growth of ZnO nanorods

Mofor, A. C.; Bakin, A. S.; Elshaer, A.; Fuhrmann, D.; Bertram, Frank; Hangleiter, A.; Christen, Jürgen; Waag, A.

In: Applied physics / A - Berlin: Springer, Bd. 88 (2007), 1, S. 17-20

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Crystallographic and electric proberties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates

Schulze, Fabian; Kisel, Olga; Dadgar, Armin; Krtschil, André; Bläsing, Jürgen; Kunze, M.; Daumiller, I.; Hempel, Thomas; Diez, Annette; Clos, Rainer; Christen, Jürgen; Krost, Alois

In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 299.2007, 2, S. 399-403

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Complex excitonic recombination kinetics in ZnO - capture, relaxation, and recombination from steady state

Bertram, Frank; Christen, Jürgen; Dadgar, Armin; Krost, Alois

In: Applied physics letters / publ. by the American Institute of Physics - Melville, NY: AIP, Bd. 90 (2007), 4, S. 041917, insges. 3 S.

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