HfN as conductive buffer for GaN epitaxy

Lüttich, Christopher; Hörich, Florian; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 44.11 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]

Publikationslink

Impact of overgrowth conditions on characteristics of tunnel-junction LEDs

Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 52.3 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]

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Local GaAs growth on patterned Si(001) surfaces by Laser-assisted MOVPE

Bruckmann, Christian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel O 17.2 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]

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n-type doping of GaN via pulsed sputter epitaxy

Hörich, Florian; Bläsing, Jürgen; Grümbel, Jona; Feneberg, Martin; Goldhahn, Rüdiger; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 1.4 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]

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Highly spatially resolved investigation of structural and optical properties of a GaN-based p-n-diode

Greczmiel, Luca; Bertram, Frank; Schmidt, Gordon; Veit, Peter; Eisele, Holger; Dempewolf, Anja; Petzold, Silke; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2024, Artikel HL 44.7 [Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft, Berlin, 17.-22. März 2024]

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Optical an structural characterization of an 'AlInN/GaN-based longitudinal photonic bandgap crystal laser structure

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-4

GaN quantum dots in resonant cavity micropillars as deep UV single photon sources

Christen, Jürgen; Schuermann, Hannes; Bertram, Frank; Schmidt, Gordon; August, Olga; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Gao, Kong; Holmes, Marc; Arakawa, Yasuhiko

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-2

Optical Nano-Charakterization of a Cascaded InGaN/GaN LED

Bertram, Frank; Schmidt, Gordon; Veit, Peter; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH3-2

HfN as conductive buffer for GaN epitaxy

Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Magnetron Sputter Epitaxy 2023, 19 - 20 Oktober, 2023, Dresden, S. 0, https://www.fep.fraunhofer.de/de/events/iwmse-2023.html#353032739

Local heteroepitaxial growth of GaAs islands on Si by laser-assisted metal organic vapor phase epitaxy

Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André

In: DGKK/DEMBE 2023 - Stuttgart : Universität, S. 31

Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices

Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 44.1

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Local epitaxial growth by laser-assisted MOVPE

Strittmatter, André; Bruckmann, Christian; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin

In: FAME – First International Workshop on Fundamentals and Advances of MOVPE processes - IPIC Research Centre . - 2023

Local epitaxial growth of GaAs islands for monolithic integration on Si

Bruckmann, Christian; Trippel, Max; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Abstract booklet of ISTDM-ICSI 2023 - Como, insges. 1 S.

Group-III/V Quantum dots - controlling their properties and position through epitaxial growth

Strittmatter, André

In: Konferenz: iNOW2023, Würzburg, 16-27 July 2023, Abstract booklet of iNOW2023 - Würzburg : Universität

Selective GaAs-based p/n-diode fabricated by laser-assisted metal organic vapor phase epitaxy

Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André

In: CSW 2023 - Jeju, Korea, S. 693, Artikel P2-010

Publikationslink

Advanced cathodoluminescence microscopy of a cascaded InGaN/GaN LED

Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wein, Konstantin; Christen, Jürgen; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 57, Artikel M07

(Late news) characterization of the space-charge region of a GaN pn-junction and pin-drift-diode using EBIC and CL

Eisele, Holger; Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Christen, Jürgen; Dadgar, Armin; Berger, Christoph; Strittmatter, André; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei; Faber, Samuel; Witzigmann, Bernd

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 116-117, Artikel W04

Improving the insulating properties of C-doped GaN buffer layers

Dadgar, Armin; Zweipfenning, Thorsten; Ehrler, Jasmin; Borgmann, Ralf; Bläsing, Jürgen; Kalisch, Holger; Vescan, Andrei; Strittmatter, André

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel TuP-ED-23

Epitaxial growth of GaN buffer layers on Si(111) by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 7.6

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Progress in local growth of III/V-semiconductor structures

Bruckmann, Christian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel O.32.1

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Growth of ScN and AlScN by reactive sputter epitaxy

Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.7

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High resistive buffer layers by Fermi-level engineering

Dadgar, Armin; Borgmann, Ralf; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.1

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High resistive buffer layers by Fermi level engineering

Dadgar, Armin; Borgmann, Ralf; Bläsing, Jörg; Strittmatter, André

In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 025701, insges. 9 S.

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Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si

Mihalic, S.; Wade, E.; Lüttich, Christopher; Hörich, Florian; Sun, C.; Fu, Z.; Christian, B.; Dadgar, Armin; Strittmatter, André; Anbacher, O.

In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 155107, insges. 12 S.

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Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1−x)2O3 alloys

Kluth, Elias; Anhar Uddin Bhuiyan, A. F. M.; Meng, Lingyu; Bläsing, Jürgen; Zhao, Hongping; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin

In: Japanese journal of applied physics - Bristol : IOP Publ., Bd. 62 (2023), Heft 5, Artikel 051001, insges. 8 S.

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Sputter epitaxy of AlN and GaN on Si(111)

Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: Physica status solidi / A - Weinheim : Wiley-VCH, Bd. 220 (2023), Heft 8, Artikel 2200609, insges. 6 S.

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Sputterepitaxie von Gruppe III-Nitriden

Hörich, Florian; Strittmatter, André

In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2023, 1 Online-Ressource (101 Seiten, 3,67 MB) [Literaturverzeichnis: insg. 17 Seiten][Literaturverzeichnis: insg. 17 Seiten]

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Optical properties of the AlScN ternary system

Grümbel, Jona; Baron, Elias; Lüttich, Christopher; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Dadgar, Armin; Feneberg, Martin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 263, Artikel AT 195

Heavily Ge-doped GaN films - properties and applications

Berger, Christoph; Neugebauer, S.; Dadgar, Armin; Schürmann, H.; Bläsing, Jürgen; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 112

GaN quantum dots in vertical resonant cavity structure

Schürmann, Hannes; Berger, Christoph; Kang, Gao; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Holmes, Mark; Christen, Jürgen

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 720

Alternately Si and C doped GaN layers for enhanced buffer breakdown

Dadgar, Armin; Borgmann, Ralf; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 576

Structural and elastic properties of ScxAl1 xN

Mihalic, Saskia; Dadgar, Armin; Feil, Niclas M.; Lüttich, Christopher; Strittmatter, André; Ambacher, Oliver

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

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Growth of epitaxial GaN by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

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Metal micro-contacts deposited by focused electron and ion beam - impact on electrical properties

Wein, Konstantin; Schmidt, Gordon; Bertram, Frank; Petzold, Silke; Veit, Peter; Berger, Christoph; Strittmatter, André; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

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Analysis of vertical indium distribution in lattice-matched AlInN layers

Xin, Tianjiao; Berger, Christoph; Bläsing, Jürgen; Strittmatter, André

In: Konferenz: 20th International Conference on Metalorganic Vapor Phase Epitaxy, ICMOVPE XX, Fellbach, July 10 - 14, 2022, The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart . - 2022, S. 34, Artikel MoA2.5

MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Strittmatter, André

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 731, Artikel PP 363

Growth of epitaxial GaN by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 609, Artikel PP 266

Sputtering eptiaxy of transition metal nitrides and AlScN

Lüttich, Christoph; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Dempewolf, Anja; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 599, Artikel PP 256

Epitaxy of high quality AlN and AlGaN layers on Si(111) by reactive pulsed sputtering

Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 28, Artikel AT 018

Laser-assisted local eptiaxy of ///-V compound semiconductors

Trippel, Max; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022

Sputter epitaxy of AlN and GaN on Si for device applications

Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Lüttich, Christopher; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: Konferenz: 2022 Compound Semiconductor Week, CSW, Ann Arbor, MI, USA, 01-03 June 2022, 2022 Compound Semiconductor Week (CSW) - Piscataway, NJ: IEEE . - 2022

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Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

Berger, Christoph; Neugebauer, S.; Hörich, Florian; Dadgar, Armin; Strittmatter, André

In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 132 (2022), Artikel 233103, insges. 9 S.

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Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors

Challa, S. R.; Witte, Hartmut; Schmidt, Gordon; Bläsing, Jürgen; Vega, N.; Kristukat, C.; Müller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, André

In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 11, Artikel 115107, insges. 7 S.

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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Sana, Prabha; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 61 (2022), 1, insges. 7 S.

Publikationslink

Laser-assisted local metalorganic vapor phase epitaxy

Trippel, Max; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: Review of scientific instruments - [S.l.]: American Institute of Physics, Bd. 93 (2022), insges. 14 S.

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Desorption induced formation of low-density GaN quantum dots - nanoscale correlation of structural and optical properties

Schürmann, Hannes; Schmidt, Gordon; Bertram, Frank; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 14, Artikel 145102, insges. 7 S.

Publikationslink

Fabrication of electrically pumped vertical cavity surface emitters employing GaN:Mg/GaN:Ge tunnel junction contacts

Seneza, Cleophace; Strittmatter, André

In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2022, 1 Online-Ressource (xv, 93 Seiten, 3,74 MB) [Literaturverzeichnis: Seite 83-87]

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MOVPE-grown optoelectronic devices with GaN:Mg/GaN:Ge tunnel junctions

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG . - 2022

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Low-resistivity vertical current transport across AlInN/GaN interfaces

Sana, Prabha; Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Schmidt, Marc-Peter; Bläsing, Jürgen; Neugebauer, Silvio; Hörich, Florian; Dadgar, Armin; Strittmatter, André

In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 60 (2021), 14, insges. 12 S.

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Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy

Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 571 (2021), insges. 4 S.

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Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer

Challa, Seshagiri Rao; Vega, Nahuel A.; Mueller, Nahuel A.; Kristukat, Christian; Debray, Mario E.; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: IEEE transactions on electron devices/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, Bd. 68 (2021), 1, S. 24-28

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Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks

Witte, Hartmut; Seneza, Cleophace; Sana, Prabha; Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.5[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

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GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 8.3[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

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Stressor-induced site control of quantum dots for single-photon sources

Pohl, Udo W.; Strittmatter, André; Schliwa, A.; Lehmann, M.; Niermann, T.; Heindel, T.; Reitzenstein, S.; Kantner, M.; Bandelow, U.; Koprucki, T.; Wünsche, H.-J.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 53-90 - ( Springer series in solid-state sciences; 194)

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Nitride microcavities and single quantum dots for classical and non-classical light emitters

Schmidt, Gordon; Berger, Christoph; Dadgar, Armin; Bertram, Frank; Veit, P.; Metzner, Susanne; Strittmatter, André; Christen, Jürgen; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)

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Submonolayer quantum dots

Owschimikow, Nina; Herzog, Bastian; Lingnau, Benjamin; Lüdge, Kathi; Lenz, Andrea; Eisele, Holger; Dähne, Mario; Niermann, Tore; Lehmann, Mario; Schliwa, Andrei; Strittmatter, André; Pohl, Udo W.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 13-51 - ( Springer series in solid-state sciences; 194)

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Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 m

Podemski, Paweł; Musiał, Anna; Gawarecki, Krzysztof; Maryński, Aleksander; Gontar, Przemysław; Bercha, Artem; Trzeciakowski, Witold A.; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Sęk, Grzegorz

In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116 (2020), issue 2, article 023102, 6 Seiten

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Individually resolved luminescence from closely stacked GaN/AlN quantum wells

Sheng, Bowen; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wang, Yixin; Wang, Tao; Rong, Xin; Chen, Zhaoying; Wang, Ping; Bläsing, Jürgen; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Qin, Zhixin; Strittmatter, André; Shen, Bo; Christen, Jürgen; Wang, Xinqiang

In: Photonics research - Washington, DC : OSA, Bd. 8 (2020), Heft 4, S. 610-615

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Experimental re-evaluation of proton penetration ranges in GaAs and InGaP

Yaccuzzi, Exequiel; Di Napoli, Solange; Liscia, Emiliano; Suárez, Sergio; Alurralde, Martín; Strittmatter, André; Plá, Juan; Giudici, Paula

In: Journal of physics / D - Bristol: IOP Publ. . - 2020[Online first]

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Tools for the performance optimization of single-photon quantum key distribution

Kupko, Timm; Helversen, Martin; Rickert, Lucas; Schulze, Jan-Hindrik; Strittmatter, André; Gschrey, Manuel; Rodt, Sven; Reitzenstein, Stephan; Heindel, Tobias

In: npj Quantum information - London: Nature Publ. Group, Vol. 6(2020), article number 29, 8 Seiten

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Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties

Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, Marc-Peter; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK - Dresden . - 2019

Reactive pulsed sputtering of AIN and GaN

Hörich, Florian; Kahrmann, C.; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef : DPG - 2019, Art. Hl 24.9

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Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR

Schürmann, Hannes; Berger, Christoph; Kang, G.; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Metzner, Sebastian; Bläsing, Jürgen; Strittmatter, André; Holmes, M.; Christen, Jürgen

In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties

Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, M.P.; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Study of AlInN/GaN on Si high-electron-mobility Transistors (HEMTs) tolerance to heavyion irradiation

Challa, Seshagiri Rao; Vega, N.; Kristukat, N.A.; Müller, N.A.; Debray, M.E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André

In: DRIP XVIII, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Berlin, 8-12 September 2019, 2019, S. -, Online

GaN:Mg/GaN:Ge tunnel junctions for better light emitters

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: ICNS13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTs) to heavy-ion irradiation

Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.A.; Debray, M.E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André

In: ICNS-13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Witte, Hartmut; Christen, Jürgen; Strittmatter, André

In: Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019, 13th International Conference on Nitride Semiconductors - Washington . - 2019

Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations

Schmidt, Gordon; Veit, Peter; Metzner, Sebastian; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP XVIII, Berlin, September, 8-12, 2019, Microscopy and microanalysis - New York, NY : Cambridge University Press, Bd. 22 (2019), S. 602-603

Publikationslink

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)

Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.; Debray, M.; Schmidt, Gordon; Christen, Jürgen; Hörich, Florian; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Publikationslink

Growth of desorption-induced GaN quantum-dots

Berger, Christoph; Schmidt, Gordon; Schürmann, Hannes; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André; Kalinoswki, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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Metastable negative differential capacitances in GaN-based pn-and tunnel-junctions

Witte, Hartmut; Fariza, Aqdas; Neugebauer, Silvio; Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.2[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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1D photonic bandgap structures for high-power GaN/InGaN laser divices

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Deckert, M.; Witte, Hartmut; Christen, Jürgen; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack

Sheng, B.; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Bläsing, Jürgen; Miyake, H.; Li, H.; Qin, Z.; Strittmatter, André; Christen, Jürgen; Shen, B.; Wang, X.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Small-area current injection in GaN-based light emitters with tunnel junctions

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, Andrée-Woo

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

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Photon-number-resolving transition-edge sensors for the metrology of photonic microstructures based on semiconductor quantum dots

Schmidt, Marco; Helversen, Martin; Schlottmann, Elisabeth; López, Marco; Gericke, Fabian; Schulze, Jan-Hindrik; Strittmatter, André; Schneider, Christian; Kück, Stefan; Höfling, Sven; Heindel, Tobias; Beyer, Jörn; Reitzenstein, Stephan

In: Proceedings of SPIE - Bellingham, Wash.: SPIE, Volume 10933 (2019)[Konferenz: Advances in Photonics of Quantum Computing, Memory, and Communication XII, San Francisco, California, United States, 2 - 7 February 2019]

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Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)

Schuermann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, Stefan; Callsen, Gordon; Jagsch, Stefan; Wagner, Markus; Hoffmann, Axel

In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)

Publikationslink

Static and dynamic characteristics of In(AsSb)/ GaAs submonolayer lasers

Quandt, David; Arsenijevic, Dejan; Strittmatter, André; Bimberg, Dieter H.

In: IEEE journal of quantum electronics - New York, NY: IEEE, Bd. 55.2019, 3, S. 1-7

Publikationslink

Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs

Vega, Nahuel A.; Dadgar, Armin; Strittmatter, André; Challa, Seshagiri Rao; Ferreyra, Romualdo A.; Kristukat, Christian; Muller, Nahuel A.; Debray, Mario E.; Schmidt, Gordon; Witte, Hartmut; Christen, Jürgen

In: IEEE transactions on nuclear science : a publication of the IEEE Nuclear and Plasma Sciences Society / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 66.2019, 12, S. 2417-2421

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Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Mrowiński, Paweł; Musiał, Anna; Gawarecki, Krzysztof; Dusanowski, Łukasz; Heuser, Tobias; Srocka, Nicole; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Sęk, Grzegorz

In: Physical review - Woodbury, NY: Inst., Volume 100, issue 11 (2019), article 115310

Publikationslink

Quantum metrology of solid-state single-photon sources using photon-number-resolving detectors

Helversen, Martin; Böhm, Jonas; Schmidt, Marco; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Beyer, Jörn; Heindel, Tobias; Reitzenstein, Stephan

In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges., Volume 21, issue 3 (2019), article 035007, insgesamt 8 Seiten

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Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film

Sheng, Bowen; Bertram, Frank; Zheng, Xiantong; Wang, Ping; Schmidt, Gordon; Veit, Peter; Bläsing, Jürgen; Chen, Zhaoying; Strittmatter, André; Christen, Jürgen; Shen, Bo; Wang, Xinqiang

In: Japanese journal of applied physics - Bristol: IOP Publ., Volume 58, issue 6 (2019), article 065503, insgesamt 6 Seiten

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Broadband semiconductor light Sources operating at 1060 nm based on InAs - Sb/GaAs submonolayer quantum dots

Herzog, Bastian; Lingnau, Benjamin; Kolarczik, Mirco; Helmrich, Sophia; Achtstein, Alexander; Thommes, Kevin; Alhussein, Fuad; Quandt, David; Strittmatter, André; Pohl, Udo

In: IEEE journal of selected topics in quantum electronics - New York, NY: IEEE, Volume 25, issue 6 (2019), article 1900310

Publikationslink

Laser-assisted local metalorganic vapor phase epitaxy

Trippel, Max; Wieneke, Matthias; Dadgar, Armin; Strittmatter, André

In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping

Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Poliani, E.; Wagner, M. R.; Maultzsch, J.; Dadgar, Armin; Strittmatter, André; Hoffmann, A.; Christen, Jürgen

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, H.; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Hoffmann, A.

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)

Challa, Seshagiri Rao; Vega, N.; Kristukat, Ch.; Debrey, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Kerstin; Christen, Jürgen; Dadgar, Armin; Strittmatter, André

In: 9th Wide Band Gap Semiconductor and Components Workshop: 8-9th October 2018, ECSAT, Harwell, UK - Noordwijk: ESA-ESTEC, 2018, 2018, Devises 2[Workshop: 9th Wide Band Gap Semiconductor and Components Workshop, Harwell, UK, 8 - 9 October 2018]

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Amphoteric incorporation of carbon in GaN

Hoffmann, Axel; Jankowski, Nadja; Poliani, Emmanuele; Scheel, Harald; Wagner, Markus R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Zwieryz, R.; Kachel, K.; Bieckermann, M.; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin; Siche, D.

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping

Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Wagner, Markus R.; Maultzsch, Janina; Dadgar, Armin; Strittmatter, André

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Nanoscale investigation of GaN / AlN quantum dot formation

Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic applications

Neugebauer, Silvio; Bläsing, Jürgen; Deckert, Martin; Lippert, Michael; Dadgar, Armin; Schmidt, Bertram; Ohl, Frank W.; Strittmatter, André

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation

Challa, Seshagiri Rao; Vega, Nahuel; Kristukat, Christian; Müller, N. A.; Dabray, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors

Schmidt, Gordon; Veit, Peter; Schürmann, Hannes; Petzold, Silke; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Carbon incorporation in GaN by intrinsic and extrinsic C-doping

Dadgar, Armin; Jankowski, N.; Poliani, E.; Wagner, M. R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Bläsing, Jürgen; Hoffmann, Axel; Strittmatter, André

In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures

Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

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GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy

Berger, Christoph; Neugebauer, Silvio; Seneza, C.; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S.; Hoffmann, A.

In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Desorption induced formation of deep UV-emitting nanostructures

Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Kalinowski, S.; Callsen, G.; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.; Christen, Jürgen

In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation

Bertram, Frank; Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018[Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]

Development of high brightness (In,Ga,Al)- N laser devices - theory and experiment

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Dadgar, Armin; Bläsing, Jürgen; Metzner, Sebastian; Deckert, Martin; Witte, Hartmut; Strittmatter, André

In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn

Tunnel junction design for InGaN/GaN-based light emitters

Strittmatter, André

In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018[Biophotonics, Biomedical Optics, and Imaging Conference, BIOS, San Francisco, USA, 27-28 January 2018]

Characteristics of InAsSb/GaAs submonolayer lasers

Quandt, David; Arsenijevic, Dejan; Bimberg, Dieter; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL36.4[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

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Semiconductor quantum dot to fiber coupling system for 1.3m range

Žołnacz, Kinga; Urbańczyk, Wacław; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Musiał, Anna; Mrowiński, Paweł; Sek, Grzegorz; Poturaj, Krzysztof; Wójcik, Grzegorz; Mergo, Paweł; Dybka, Kamil; Dyrkacz, Marius; Dłubek, Michał

In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Vol. 10674.2018, Art. 106741R

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A stand-alone fiber-coupled single-photon source

Schlehahn, Alexander; Fischbach, Sarah; Schmidt, Ronny; Kaganskiy, Arsenty; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan

In: Scientific reports - [London] : Macmillan Publishers Limited, part of Springer Nature - Vol. 8.2018, Art. 1340, insgesamt 7 S.

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Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses

Kaganskiy, Arsenty; Fischbach, Sarah; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan

In: Optics communications - Amsterdam : [Verlag nicht ermittelbar], Bd. 413 (2018), S. 162-166

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Generation of maximally entangled states and coherent control in quantum dot microlenses

Bounouar, Samir; Haye, Christoph; Strauß, Max; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

In: Applied physics letters - Melville, NY : American Inst. of Physics - Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.

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Analysis of InAsSb/GaAs submonolayer stacks

Quandt, David; Bläsing, Jürgen; Strittmatter, André

In: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, Bd. 494 (2018), S. 1-7

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Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs

Yacoub, Hady; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Aandrei; Dadgar, Armin; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André; Rennesson, Stephanie; Semond, Fabrice

In: Physica status solidi / A - Weinheim : Wiley-VCH - Vol. 215.2018, 9, Art. 1700638

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Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography

Srocka, N.; Musiał, A.; Schneider, P.-I.; Mrowiński, P.; Holewa, P.; Burger, S.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sȩk, G.

In: AIP Advances - New York, NY : American Inst. of Physics - Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.

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Two charge states of the C N acceptor in GaN - evidence from photoluminescence

Reshchikov, M. A.; Vorobiov, M.; Demchenko, D. O.; Ozgur, Ü.; Morkoç, H.; Lesnik, A.; Hoffmann, M. P.; Hörich, Florian; Dadgar, Armin; Strittmatter, André

In: Physical review - Woodbury, NY : Inst. - Vol. 98.2018, 12-15, Art. 125207

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Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Susilo, Norman; Roumeliotis, Georgios G.; Narodovitch, Michael; Witzigmann, Bernd; Rychetsky, Monir; Neugebauer, Silvio; Guttmann, Martin; Enslin, Johannes; Dadgar, Armin; Niermann, Tore; Wernicke, Tim; Strittmatter, André; Lehmann, Michael; Papadimitriou, Dimitra N.; Kneissl, Michael

In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 51.2018, 48, Art. 485103, insgesamt 6 S.

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Photon noise suppression by a built-in feedback loop

Al-Ashouri, A.; Merkel, B.; Geller, M.; Ludwig, A.; Wieck, A. D.; Schulze, J.-H.; Strittmatter, André; Kurzmann, A.; Lorke, A.

In: ResearchGATE: scientific neetwork ; the leading professional network for scientists - Cambridge, Mass.: ResearchGATE Corp., 2010 . - 2018, insges. 11 S.

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Path-controlled time reordering of paired photons in a dressed three-level cascade

Bounouar, Samir; Strauß, Max; Carmele, Alexander; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Hans-Peter; Strittmatter, André; Rodt, Sven; Knorr, Andreas; Reitzenstein, Stephan

In: Physical review letters - College Park, Md : APS, Vol. 118.2017, 23, Artikel 233601

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A bright triggered twin-photon source in the solid state

Heindel, T.; Thoma, A.; Helversen, M.; Schmidt, M.; Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Strittmatter, André; Beyer, J.; Rodt, S.; Carmele, A.; Knorr, A.; Reitzenstein, S.

In: Nature Communications - [London] : Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.

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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

Neugebauer, S.; Hoffmann, M. P.; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Niermann, T.; Narodovitch, M.; Lehmann, M.

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 10, Art. 102104, insgesamt 5 S.

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Properties of C-doped GaN

Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.

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Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping

Fariza, A.; Lesnik, A.; Neugebauer, S.; Wieneke, Matthias; Hennig, J.; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: Journal of applied physics - Melville, NY : American Inst. of Physics - Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.

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Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique

Strauß, Max; Kaganskiy, Arsenty; Voigt, Robert; Schnauber, Peter; Schulze, Jan-Hendrik; Rodt, Sven; Strittmatter, André; Reitzenstein, Stephan

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 11, Art. 111101, insgesamt 5 S.

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Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission

Maryński, A.; Mrowiński, P.; Ryczko, K.; Podemski, P.; Gawarecki, K.; Musiał, A.; Misiewicz, J.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sęk, G.

In: Acta physica Polonica / A - Warsaw : Acad. Inst, Bd. 132.2017, 2, S. 386-389

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Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror

Fischbach, Sarah; Kaganskiy, Arsenty; Tauscher, Esra Burcu Yarar; Gericke, Fabian; Thoma, Alexander; Schmidt, Ronny; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Reitzenstein, S.

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.

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Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source

Fischbach, Sarah; Schlehahn, Alexander; Thoma, Alexander; Srocka, Nicole; Gissibl, Timo; Ristok, Simon; Thiele, Simone; Kaganskiy, Arsenty; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Herkommer, Alois; Giessen, Harald; Reitzenstein, Stephan

In: ACS photonics / American Chemical Society - Washington, DC : ACS, Bd. 4 (2017), Heft 6, S. 1327-1332

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Two-photon interference from remote deterministic quantum dot microlenses

Thoma, A.; Schnauber, P.; Böhm, J.; Gschrey, M.; Schulze, J.-H.; Strittmatter, André; Rodt, S.; Heindel, T.; Reitzenstein, S.

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011104

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Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter

Berger, Christoph; Strittmatter, André

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On current injection into single quantum dots through oxide-confined pn-diodes

Kantner, M.; Bandelow, U.; Koprucki, T.; Schulze, J.-H.; Strittmatter, A.; Wunsche, H.-J.

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Strong amplitude-phase coupling in submonolayer quantum dots

Herzog, B.; Lingnau, B.; Kolarczik, M.; Kaptan, Y.; Bimberg, D.; Maaßdorf, A.; Pohl, U.W.; Rosales, R.; Schulze, J.-H.; Strittmatter, A.; Weyers, M.; Woggon, U.; Lüdge, K.; Owschimikow, N.

In: 2016, Bd. 109, unter URL: https://dx.doi.org/10.1063/1.4967833, unter URL: 10.1063/1.4967833

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A.R.; Strittmatter, A.; Hoffmann, A.; Giudici, P.

In: 2016, Bd. 119, unter URL: https://dx.doi.org/10.1063/1.4953585, unter URL: 10.1063/1.4953585

Efficient current injection into single quantum dots through oxide-confined p-n-diodes

Kantner, M.; Bandelow, U.; Koprucki, T.; Schulze, J.-H.; Strittmatter, A.; Wunsche, H.-J.

In: 2016, Bd. 63, S. 2036-2042, unter URL: https://dx.doi.org/10.1109/TED.2016.2538561, unter URL: 10.1109/TED.2016.2538561

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments

Thoma, A.; Schnauber, P.; Gschrey, M.; Seifried, M.; Wolters, J.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Carmele, A.; Knorr, A.; Heindel, T.; Reitzenstein, S.

In: 2016, Bd. 116, unter URL: https://dx.doi.org/10.1103/PhysRevLett.116.033601, unter URL: 10.1103/PhysRevLett.116.033601

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Harrison, S.; Young, M.P.; Hodgson, P.D.; Young, R.J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U.W.; Bimberg, D.

In: 2016, Bd. 93, unter URL: https://dx.doi.org/10.1103/PhysRevB.93.085302, unter URL: 10.1103/PhysRevB.93.085302

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A. R.; Strittmatter, André; Hoffmann, A.; Giudici, P.

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Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Sala, E.M.; Stracke, G.; Selve, S.; Niermann, T.; Lehmann, M.; Schlichting, S.; Nippert, F.; Callsen, G.; Strittmatter, A.; Bimberg, D.

In: 2016, Bd. 109, unter URL: https://dx.doi.org/10.1063/1.4962273, unter URL: 10.1063/1.4962273

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Neugebauer, Silvio; Metzner, Sebastian; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

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Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses

Schlehahn, A.; Schmidt, R.; Hopfmann, C.; Schulze, J.-H.; Strittmatter, André; Heindel, T.; Gantz, L.; Schmidgall, E. R.; Gershoni, D.; Reitzenstein, S.

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Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

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Clustered quantum dots in single GaN islands formed at threading dislocations

Schmidt, Gordon; Veit, Peter; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

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On reduction of current leakage in GaN by carbon-doping

Fariza, Aqdas; Lesnik, Andreas; Bläsing, Jürgen; Hoffmann, Marc P.; Hörich, Florian; Veit, Peter; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

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Properties of C-doped GaN

Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André

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Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses

Jakubczyk, T.; Delmonte, V.; Fischbach, S.; Wigger, D.; Reiter, D.E.; Mermillod, Q.; Schnauber, P.; Kaganskiy, A.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Langbein, W.; Kuhn, T.; Reitzenstein, S.; Kasprzak, J.

In: 2016, Bd. 3, S. 2461-2466, unter URL: https://dx.doi.org/10.1021/acsphotonics.6b00707, unter URL: 10.1021/acsphotonics.6b00707

Indistinguishable photons from deterministically fabricated quantum dot microlenses

Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.

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Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

Hennig, Jonas; Dadgar, Armin; Witte, Hartmut; Bläsing, Jürgen; Lesnik, Andreas; Strittmatter, André; Krost, Alois

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Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel

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Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

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Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

Schlehahn, A.; Gaafar, M.; Vaupel, M.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Stolz, W.; Rahimi-Iman, A.; Heindel, T.; Koch, M.; Reitzenstein, S.

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Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

Herzog, B.; Owschimikow, N.; Schulze, J.-H.; Rosales, R.; Kaptan, Y.; Kolarczik, M.; Switaiski, T.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Woggon, U.

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Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography

Gschrey, M.; Thoma, A.; Schnauber, P.; Seifried, M.; Schmidt, R.; Wohlfeil, B.; Krüger, L.; Schulze, J.-H.; Heindel, T.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.

In: 2015, Bd. 6, unter URL: https://dx.doi.org/10.1038/ncomms8662, unter URL: 10.1038/ncomms8662

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

Quandt, D.; Schulze, J.-H.; Schliwa, A.; Diemer, Z.; Prohl, C.; Lenz, A.; Eisele, H.; Strittmatter, A.; Pohl, U.W.; Gschrey, M.; Rodt, S.; Reitzenstein, S.; Bimberg, D.; Lehmann, M.; Weyland, M.

In: 2015, Bd. 91, unter URL: https://dx.doi.org/10.1103/PhysRevB.91.235418, unter URL: 10.1103/PhysRevB.91.235418

Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication

Gschrey, M.; Schmidt, R.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.

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Strain field of a buried oxide aperture

Kießling, F.; Niermann, T.; Lehmann, M.; Schulze, J.-H.; Strittmatter, A.; Schliwa, A.; Pohl, U.W.

In: 2015, Bd. 91, unter URL: https://dx.doi.org/10.1103/PhysRevB.91.075306, unter URL: 10.1103/PhysRevB.91.075306

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Bonato, L.; Sala, E.M.; Stracke, G.; Nowozin, T.; Strittmatter, A.; Ajour, M.N.; Daqrouq, K.; Bimberg, D.

In: 2015, Bd. 106, unter URL: https://dx.doi.org/10.1063/1.4906994, unter URL: 10.1063/1.4906994

Desorption induced GaN quantum dots on (0001) AlN by MOVPE

Bellmann, K.; Tabataba-Vakili, F.; Wernicke, T.; Strittmatter, A.; Callsen, G.; Hoffmann, A.; Kneissl, M.

In: 2015, Bd. 9, S. 526-529, unter URL: https://dx.doi.org/10.1002/pssr.201510217, unter URL: 10.1002/pssr.201510217

Operating single quantum emitters with a compact Stirling cryocooler

Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Heindel, T.; Reitzenstein, S.

In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.

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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Lesnik, Andreas; Veit, Peter; Schmidt, Gordon; Hempel, Thomas; Christen, Jürgen; Krost, Alois; Strittmatter, André

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 414.2015, S. 105-109

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Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses

Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.

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Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses

Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heinde, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.

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Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies

Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.

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Index-coupled quantum-dot distributed-feedback lasers

Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.

In: 2014, S. 240-241, unter URL: https://dx.doi.org/10.1109/IPCon.2014.6995337, unter URL: 10.1109/IPCon.2014.6995337

Fabrication of deterministic quantum light sources using cathodoluminescence lithography

Gschrey, M.; Gericke, F.; Schmidt, R.; Schlottmann, E.; Schüssler, A.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.

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Indistinguishable photons from deterministic quantum dot microlenses

Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.

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Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots

Stracke, G.; Sala, E.M.; Selve, S.; Niermann, T.; Schliwa, A.; Strittmatter, A.; Bimberg, D.

In: 2014, Bd. 104, unter URL: https://dx.doi.org/10.1063/1.4870087, unter URL: 10.1063/1.4870087

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots

Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.

In: 2014, unter URL: https://dx.doi.org/10.1063/1.4887063, unter URL: 10.1063/1.4887063

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Berger, C.; Dadgar, A.; Bläsing, J.; Lesnik, A.; Veit, P.; Schmidt, G.; Hempel, T.; Christen, J.; Krost, A.; Strittmatter, A.

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Self-aligned quantum-dot growth for single-photon sources

Pohl, U.W.; Strittmatter, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Unrau, W.; Heindel, T.; Hitzemann, O.; Bimberg, D.; Reitzenstein, S.

In: 2013, unter URL: https://dx.doi.org/10.1109/ICIPRM.2013.6562566, unter URL: 10.1109/ICIPRM.2013.6562566

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots

Switaiski, T.; Woggon, U.; Alden Angeles, D.E.; Hoffmann, A.; Schulze, J.-H.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.

In: 2013, Bd. 88, unter URL: https://dx.doi.org/10.1103/PhysRevB.88.035314, unter URL: 10.1103/PhysRevB.88.035314

In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

Gschrey, M.; Gericke, F.; Schüßler, A.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.

In: 2013, Bd. 102, unter URL: https://dx.doi.org/10.1063/1.4812343, unter URL: 10.1063/1.4812343

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

Prohl, C.; Lenz, A.; Roy, D.; Schuppang, J.; Stracke, G.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Eisele, H.; Dähne, M.

In: 2013, Bd. 102, unter URL: https://dx.doi.org/10.1063/1.4798520, unter URL: 10.1063/1.4798520

Site-selective growth of single quantum dots

Strittmatter, A.

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Electro-optical resonance modulation of vertical-cavity surface-emitting lasers

Germann, T.D.; Hofmann, W.; Nadtochiy, A.M.; Schulze, J.-H.; Mutig, A.; Strittmatter, A.; Bimberg, D.

In: 2012, Bd. 20, S. 5099-5107, unter URL: https://dx.doi.org/10.1364/OE.20.005099, unter URL: 10.1364/OE.20.005099

Site-controlled quantum dot growth on buried oxide stressor layers

Strittmatter, A.; Holzbecher, A.; Schliwa, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.

In: 2012, Bd. 209, S. 2411-2420, unter URL: https://dx.doi.org/10.1002/pssa.201228407, unter URL: 10.1002/pssa.201228407

Growth of In0.25Ga0.75 As quantum dots on GaP utilizing a GaAs interlayer

Stracke, G.; Glacki, A.; Nowozin, T.; Bonato, L.; Rodt, S.; Prohl, C.; Lenz, A.; Eisele, H.; Schliwa, A.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.

In: 2012, Bd. 101, unter URL: https://dx.doi.org/10.1063/1.4768294, unter URL: 10.1063/1.4768294

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection

Unrau, W.; Quandt, D.; Schulze, J.-H.; Heindel, T.; Germann, T.D.; Hitzemann, O.; Strittmatter, A.; Reitzenstein, S.; Pohl, U.W.; Bimberg, D.

In: 2012, Bd. 101, unter URL: https://dx.doi.org/10.1063/1.4767525, unter URL: 10.1063/1.4767525

High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots

Posilovic, K.; Kalosha, V.P.; Winterfeldt, M.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Strittmatter, A.; Bimberg, D.; Pohl, J.; Weyers, M.

In: 2012, Bd. 48, S. 1419-1420, unter URL: https://dx.doi.org/10.1049/el.2012.3174, unter URL: 10.1049/el.2012.3174

Atomic structure of closely stacked InAs submonolayer depositions in GaAs

Niermann, T.; Kieling, F.; Lehmann, M.; Schulze, J.-H.; Germann, T.D.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.

In: 2012, Bd. 112, unter URL: https://dx.doi.org/10.1063/1.4758301, unter URL: 10.1063/1.4758301

Lateral positioning of InGaAs quantum dots using a buried stressor

Strittmatter, A.; Schliwa, A.; Schulze, J.-H.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.

In: 2012, Bd. 100, unter URL: https://dx.doi.org/10.1063/1.3691251, unter URL: 10.1063/1.3691251

InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Chua, C.; Yang, Z.; Knollenberg, C.; Teepe, M.; Cheng, B.; Strittmatter, A.; Bour, D.; Johnson, N.M.

In: 2011, Bd. 7939, unter URL: https://dx.doi.org/10.1117/12.875188, unter URL: 10.1117/12.875188

Atomic structure and optical properties of InAs submonolayer depositions in GaAs

Lenz, A.; Eisele, H.; Becker, J.; Schulze, J.-H.; Germann, T.D.; Luckert, F.; Pötschke, K.; Lenz, E.; Ivanova, L.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Dähne, M.

In: 2011, Bd. 29, unter URL: https://dx.doi.org/10.1116/1.3602470, unter URL: 10.1116/1.3602470

Semi-polar nitride surfaces and heterostructures

Strittmatter, A.; Northrup, J.E.; Johnson, N.M.; Kisin, M.V.; Spiberg, P.; El-Ghoroury, H.; Usikov, A.; Syrkin, A.

In: 2011, Bd. 248, S. 561-573, unter URL: https://dx.doi.org/10.1002/pssb.201046422, unter URL: 10.1002/pssb.201046422

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers

Strittmatter, A.; Teepe, M.; Knollenberg, C.; Johnson, N.M.

In: 2011, Bd. 314, S. 1-4, unter URL: https://dx.doi.org/10.1016/j.jcrysgro.2010.09.064, unter URL: 10.1016/j.jcrysgro.2010.09.064

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

Wunderer, T.; Northrup, J.E.; Yang, Z.; Teepe, M.; Strittmatter, A.; Johnson, N.M.; Rotella, P.; Wraback, M.

In: 2011, Bd. 99, unter URL: https://dx.doi.org/10.1063/1.3663575, unter URL: 10.1063/1.3663575

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

Strittmatter, A.; Teepe, M.; Knollenberg, C.; Yang, Z.; Chua, C.; Johnson, N.M.; Spiberg, P.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.

In: 2010, Bd. 7616, unter URL: https://dx.doi.org/10.1117/12.842177, unter URL: 10.1117/12.842177

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures

Strittmatter, A.; Teepe, M.; Yang, Z.; Chua, C.; Northrup, J.; Johnson, N.M.; Spiberg, P.; Brown, R.G.W.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.

In: 2010, Bd. 7, S. 1814-1816, unter URL: https://dx.doi.org/10.1002/pssc.200983557, unter URL: 10.1002/pssc.200983557

Nitride laser diodes with nonepitaxial cladding layers

Cheng, B.; Chua, C.L.; Yang, Z.; Teepe, M.; Knollenberg, C.; Strittmatter, A.; Johnson, N.

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Structural characterization of thick (112Ì¿2) GaN layers grown by HVPE on m-plane sapphire

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