Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 465.2017, S. 55-59; http://dx.doi.org/10.1016/j.jcrysgro.2017.02.037

Effect of nano-porous SiNx interlayer on propagation of extended defects in semipolar (1122)-orientated GaN
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Vol. 14.2017, 8, Art. 1700024, insgesamt 5 S.; http://dx.doi.org/10.1002/pssc.201700024 ; [Special Issue: 9 International Workshop on Nitride Semiconductors (IWN2016)]

Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-Like InGaN/GaN nanowires
In: ACS photonics - Washington, DC: ACS, Bd. 4.2017, 3, S. 657-664; http://dx.doi.org/10.1021/acsphotonics.6b01030

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
In: Scientific reports - [London]: Macmillan Publishers Limited, part of Springer Nature, Vol. 7.2017, Art. 46420, insgesamt 6 S.; http://dx.doi.org/10.1038/srep46420

Selective area growth of AlN/GaN nanocolumns on (0001) and (1122) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates
In: Nanotechnology - Bristol: IOP Publ, Vol. 36.2017, 36, Art. 365704, insgesamt 6 S.; http://dx.doi.org/10.1088/1361-6528/aa78e6

Hoch orts-zeitaufgelöste optische Untersuchungen zum exzitonischen Transport in GaN und ZnO
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Clustered quantum dots in single GaN islands formed at threading dislocations
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.; http://dx.doi.org/10.7567/JJAP.55.05FF04

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 67-72

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes
In: Japanese journal of applied physics : JJAP. - Bristol : IOP Publ; Vol. 55.2016, 5S, Art. 05FJ09, insgesamt 5 S.

Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 54-60

Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 180-185

Improvement of optical quality of semipolar (1122) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth
In: Journal of applied physics : AIP\'s archival journal for significant new results in applied physics. - Melville, NY : American Inst. of Physics; Vol. 119.2016, 14, Art. 145303, insgesamt 7 S.

Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
In: Physical review. - Woodbury, NY : Inst; Vol. 93.2016, 12-15, Art. 125436

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 440.2016, S. 6-12; http://dx.doi.org/10.1016/j.jcrysgro.2016.01.027

Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
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Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 73-77

Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 112-117

Nanoscopic insights into InGaN/GaN core-shell nanorods - structure, composition, and luminescence
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Phosphor-converted white light from blue-emitting InGaN microrod LEDs
In: Physica status solidi / A. - Weinheim : Wiley-VCH, Bd. 213.2016, 6, S. 1577-1584

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 253.2016, 1, S. 118-125; http://dx.doi.org/10.1002/pssb.201552448

Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)
In: Japanese journal of applied physics : JJAP. - Bristol : IOP Publ; Vol. 55.2016, 5S, Art. 05FF02, insgesamt 6 S.

Gallium gradients in Cu(In,Ga)Se2 thin-film solar cells
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About the practical implementation of same time-of-flight measurements scheme in cathodoluminescence microscopy
In: Prikladnaja fizika : naučno-techničeskij žurnal. - Moskva, 4, S. 16-20, 2015

Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
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Determination of carrier diffusion length in GaN
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Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4922919

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 414.2015, S. 105-109; http://dx.doi.org/10.1016/j.jcrysgro.2014.09.008

Optical emission of individual GaN nanocolumns analyzed with high spatial resolution
In: Nano letters : a journal dedicated to nanoscience and nanotechnology. - Washington, DC : ACS Publ, Bd. 15.2015, 8, S. 5105-5109

STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells
In: Physica status solidi / C. - Berlin : Wiley-VCH, Bd. 12.2015, 4/5, S. 469-472

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiN x interlayers
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

Spatially resolved optical emission of cubic GaN/AIN multi-quantum well structures
In: MRS online proceedings library. - Warrendale, Pa : MRS, Bd. 1736.2015, S. 25-30

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

Extended defects in GaN nanocolumns characterized by cathodoluminescence directly performed in a transmission electron microscope
In: Turkish journal of physics. - Ankara : Tübitak, 2014

Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 392.2014, S. 5-10

InGaN - direct correlation of nanoscopic morphology features with optical and structural properties
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 105.2014, 7, Art. 072108, insgesamt 5 S.

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 105.2014, 3, Art. 032101, insgesamt 5 S.

Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se 2 thin films
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Bd. 115.2014, 2, Art. 023514, insgesamt 7 S.

Determination of carrier diffusion length in p- and n-type GaN
In: Proceedings of SPIE. - Bellingham, Wash : SPIE; Vol. 8986.2014, Art. 89862C

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 8986/2014

GaN-based vertical cavities with all dielectric reflectors by epitaxial lateral overgrowth
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; 52.2013, Art. 08JH03, insgesamt 4 S.

Group III nitride coreshell nano- and microrods for optoelectronic applications
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / Rapid research letters, Bd. 7.2013, 10, S. 800-814

Growth and characterization of stacking fault reduced GaN(101̄3) on sapphire
In: Journal of physics. - Bristol : IOP PublJournal of physics / D, Bd. 46.2013, 12, insges. 4 S.

MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 288-292

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1101) GaN revealed from spatially resolved luminescence
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art.211908, insgesamt 6 S.

Optical studies of strain and defect distribution in semipolar (1 1 01) GaN on patterned Si substrates
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 114.2013, Art. 113502, insgesamt 10 S.

Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates
In: Gallium nitride materials and devices VIII. - Bellingham, Wash. : SPIE, 2013 - (Proceedings of SPIE; 8625)

GaN laser structure with semipolar quantum wells and embedded nanostripes
In: 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). - IEEE, insges. 2 S.

Chemical gradients in Cu(In,Ga)(S,Se)2 thin-film solar cells - results of the GRACIS project
In: EU PVSEC proceedings. - Munich : WIP-Renewable Energies; 2012, Session 3BO.4.1, S. 2166-2176

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of GaN based light-emitting diodes
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 112.2012, 2, Art. 023107, insgesamt 6 S.

Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR
In: MRS online proceedings library. - Warrendale, Pa : MRS, Bd. 1396.2012

Optische Mikro-Charakterisierung von epitaktisch gewachsenem ZnO und ZnO-basierten Heterostrukturen
In: Magdeburg, Univ., Fak. für Naturwiss., Habil.-Schr., 2012; 75 S.: Ill., graph. Darst.; 21 cm

Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 3/4, S. 507-510

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 5, S. 1253-1258

Semipolar GaInN quantum well structures on large area substrates
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, Bd. 249.2012, 13, S. 464-467

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
In: Gallium nitride materials and devices VII. - Bellingham, Wash. : SPIE; 2012, Art. 826224 - (Proceedings of SPIE; 8262)

Excitonic transport in ZnO
In: Oxide-based materials and devices III. - Bellingham, Wash. : SPIE; 2012, Art. 82630X - (Proceedings of SPIE; 8263)

Heavy Si doping - the key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 578-582; http://dx.doi.org/10.1002/pssb.201046372

Eliminating stacking faults in semi-polar GaN by AlN interlayers
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021905, insgesamt 3 S.; http://dx.doi.org/10.1063/1.3610467

Epitaxial lateral overgrowth of non-polar GaN(1 1 ̄0 0) on Si(1 1 2) patterned substrates by MOCVD
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 314.2011, 1, S. 129-135; http://dx.doi.org/10.1016/j.jcrysgro.2010.11.152

Growth and coalescence behavior of semipolar (112̄2) GaN on pre-structured r-plane sapphire substrates
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 588-593; http://dx.doi.org/10.1002/pssb.201046336

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 605-610; http://dx.doi.org/10.1002/pssb.201046369

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 594-599; http://dx.doi.org/10.1002/pssb.201046313

Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 600-604; http://dx.doi.org/10.1002/pssb.201046334

MOVPE of CuGaSe 2 on GaAs in the presence of a Cu xSe secondary phase
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 315.2011, 1, S. 82-86; http://dx.doi.org/10.1016/j.jcrysgro.2010.09.035

Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror
In: Superlattices and microstructures: a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces - Oxford [u.a.]: Elsevier Science, Academic Press, Bd. 49.2011, 3, S. 187-192; http://dx.doi.org/10.1016/j.spmi.2010.04.011 ; [Special issue: Proceedings of the 10th International Conference on the Physics of LightMatter Coupling in Nanostructures, PLMCN 2010 (Cuernavaca, Mexico), 12-16 April, 2010]

Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (112̄2) and (101̄1) pyramid facets
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 632-637; http://dx.doi.org/10.1002/pssb.201046500

StranskiKrastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
In: Semiconductor science and technology - Bristol: IOP Publ., Bd. 26.2011, 1, insges. 8 S.; http://dx.doi.org/10.1088/0268-1242/26/1/014041

Stress relaxation in low-strain AlInN/GaN bragg mirrors
In: Japanese journal of applied physics: JJAP - Tokyo: IOP Publ, 50.2011, 3, Art. 031002, insgesamt 6 S.; http://dx.doi.org/10.1143/JJAP.50.031002

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 549-560; http://dx.doi.org/10.1002/pssb.201046352

Improving GaN-on-silicon properties for GaN device epitaxy
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1503-1508; http://dx.doi.org/10.1002/pssc.201001137 ; [Special Issue: 3rd International Symposium on Growth of Group III-Nitrides (ISGN 3) E-MRS 2010 Spring Meeting Symposium G: Physics and Applications of Novel Gain Materials Based on IIIVN Compounds 14th International Conference on High Pressure Semiconductor Physics (HPSP14)]

Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
In: Applied physics letters. - Melville, NY : AIP; 96.2010, 17, Art. 172102, insges. 3 S.

GaInN-based LED structures on selectively grown semi-polar crystal facets
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, 2010

Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator
In: Electrochemical and solid-state letters. - Pennington, NJ : Soc; 13.2010, 10, S. H343-H345

Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
In: Applied physics letters. - Melville, NY : AIP, Bd. 97.2010, 18, S. 181105-1-181105-3

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, insges. 12 S., 2010

Light extraction from GaN-based LED structures on silicon-on-insulator substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 1, S. 88-91

Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 7/8, S. 2140-2143

AllnN/GaN based multi quantum well structures - growth and optical proberties
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880899, 2009

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009, 3, insges. 3 S.

Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes - tubes, spirals, and curved sheets
In: American Chemical Society : ACS nano . - Washington, DC : ACS, Bd. 3.2009, 7, S. 1663-1668

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al x Ga 1-x N on Si (111)
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 14, S. 3742-3748

MOVPE growth of high-quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV-LEDs
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880917, 2009

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009a24, insges. 3 S.

Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880964, 2009

Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 11, S. 2575-2577

GaN-based deep green light emitting diodes on silicon-on-insulator substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 2, S. 822-825

A-plane GaN epitaxial lateral overgrowth structures - growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 21, insges. 3 S.

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
In: Journal of applied physics . - Melville, NY : AIP, Bd. 104.2008, 8, S. 083510-1-083510-7

Structural and optical proberties of nonpolar GaN thin films
In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 17, S. 171904-1-171904-3

Time-resolved cathodoluminescence of Mg-doped GaN
In: Applied physics letters . - Melville, NY : AIP, Bd. 93.2008, 15, S. 151901-1-151901-3

MOVPE growth and characterization of AllnN FET structures on Si(1 1 1)
In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates. - Warrendale, Pa. : MRS, insges. 6 S., 2008 - (Materials Research Society symposium proceedings; 1068) ; Kongress: MRS Spring Meeting; (San Francisco, Calif.) : 2008.03.24-28

MOVPE growth of blue In xGa 1-x/GaN LEDs on 150 mm Si(001)
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 5.2008, 6, S. 2238-2240

Zinc oxide and related materials - symposium held November 27 - 30, 2006, Boston, Massachusetts, U.S.A. ; [Symposium K, "Zinc Oxide and Related Materials", held ... at the 2006 MRS fall meeting]
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Blue light emitting diodes on Si(001) grown by MOVPE
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 4.2007, 1, S. 41-44; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200673534

Complex excitonic recombination kinetics in ZnO - capture, relaxation, and recombination from steady state
In: Applied physics letters . - Melville, NY : AIP, Bd. 90.2007, 4, S. 041917, insges. 3 S.

Crystallographic and electric proberties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 299.2007, 2, S. 399-403

Epitaxy of GaN on silicon - impact of symmetry and surface reconstruction
In: New journal of physics . - London : IOP Publ., Bd. 9.2007, 10, insges. 10 S.; Abstract unter URL: http://dx.doi.org/10.1088/1367-2630/9/10/389

Fabry-perot effects in InGaN/GaN heterostructures on Si-substrate
In: Journal of applied physics . - Melville, NY : AIP, Bd. 101.2007, 3, S. 033113, insges. 4 S.

Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 300.2007, 1, S. 170-175

Homoepitaxy of ZnO - from the substrates to doping
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 244.2007, 5, S. 1451-1457

Laser-interface lithography tailored for highly symmetrically arranged ZnO nanowire arrays
In: Small . - Weinheim : Wiley-VCH Verl., Bd. 3.2007, 1, S. 76-80; Abstract unter URL: http://dx.doi.org/10.1002/smll.200600307

Metal-organic vapor phase epitaxy and properties of AllnN in the whole compositional range
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 90.2007, S. 022105-1-022105-3; Abstract unter URL: http://dx.doi.org/10.1063/1.2424649

Vapour transport growth of ZnO nanorods
In: Applied physics . - Berlin : Springer, Bd. 88.2007, 1, S. 17-20

Growth and characterization of homoepitaxial ZnO thin films growth by CVD
In: Zinc oxide and related materials. - Warrendale, Pa. : Materials Research Society, insges. 6 S., 2007 - (Materials Research Society symposium proceedings; 957) ; Kongress: MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Metalorganic vapor phase epitaxy of ZnO - towards p-type conductivity
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 15 S., 2007 - (Proceedings of SPIE; 6474)

Thin film growth of ZnO and its relation to substrate proberties
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 9 S., 2007 - (Proceedings of SPIE; 6474)

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1587-1590; Abstract unter URL: http://www3.interscience.wiley.com/cgi-bin/abstract/112622403/ABSTRACT

Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al-2O-3
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 4, S. 1046-1050; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200564760

Critial aspects of high temperature MOCVD growth of AIN epilayers on 6H-SiC substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1392-1395; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200565387

Direct imaging of phase separation in ZnCdO layers
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 88.2006, 6, S. 061915; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000088000006061915000001&idtype=cvips&gifs=Yes

Growth of single-domain GaN on Si(0 0 1) by metalorganic vapor-phase epitaxy
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 289.2006, 2, S. 485-488; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4J32HHD-D&_user=1908389&_handle=V-WA-A-W-CZ-MsSAYZW-UUA-U-AACZUCDYVZ-AACBZBYZVZ-ACZEYYBV-CZ-U&_fmt=summary&_coverDate=04%2F01%2F2006&_rdoc=14&_orig=browse&_srch=%23toc%235302%232006%23997109997%23618635!&_cdi=5302&view=c&_acct=C000052693&_version=1&_urlVersion=0&_userid=1908389&md5=e31b7a130f5b4f153d9f7bdd4ca7e20e

MBE growth of ZnO on sapphire employing hydrogen peroxide as an oxidant
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 287.2006, 1, S. 7-11; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4HVF14T-4&_user=1908389&_handle=V-WA-A-W-VA-MsSWYWW-UUA-U-AACZUCUZBB-AACBZBAVBB-ACCYYCYB-VA-U&_fmt=summary&_coverDate=01%2F18%2F2006&_rdoc=5&_orig=browse&_srch=%23toc%235302%232006%23997129998%23614528!&_cdi=5302&view=c&_acct=C000052693&_version=1&_urlVersion=0&_userid=1908389&md5=c7a885c0bf828f331dfbb215a171b358

MOVPE growth of GaN on Si - substrates and strain
In: Thin solid films . - Amsterdam [u.a.] Elsevier, Bd. 515.2007, 10, S. 4356-4361

MOVPE growth of high-quality AIN
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 297.2006, 2, S. 306-210; Abstract unter URL: http://han.med.uni-magdeburg.de/han/2776/www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4MC71Y0-2&_user=1908396&_handle=C-WA-A-BA-BA-MsSAYVA-UUA-U-U-BA-U-U-AADUEAVYEU-AAZYVECZEU-WUUVBDACY-BA-U&_fmt=summary&_coverDate=12%2F29%2F2006&_rdoc=8&_orig=browse&_srch=%23toc%235302%232006%23997029997%23639777!&_cdi=5302&_acct=C000052693&_version=1&_urlVersion=0&_userid=1908396&md5=b47537f4d69e1731f90dc46ef4ccb325

Microscopic luminescence properties of ZnO and Zno based heterostructures
In: Acta physica Polonica . - Warsaw : Acad. Inst., Bd. 110.2006, 2, S. 103-110; Abstract unter URL: http://przyrbwn.icm.edu.pl/APP/ABSTR/109/a109-6-11.html

Optical and structural microanalysis of GaN grown on SiN submonolayers
In: Journal of applied physics . - [S.l.], Bd. 99.2006, S. 123518-1-123518-8; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000099000012123518000001&idtype=cvips&gifs=Yes

Strong potential profile fluctuation and effective localization process in InGaN/GaN multiple quamtum wells grown on {10-1m} faceted surface GaN template
In: Journal of applied physics . - [S.l.], Bd. 100.2006, S. 013528-1-013528-5; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000100000001013528000001&idtype=cvips&gifs=yes

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 203.2006, 7, S. 1778-1782; Abstract unter URL: http://www3.interscience.wiley.com/cgi-bin/abstract/112631973/ABSTRACT

Characterization of deep defects responsible for the quenching behavior in undoped GaN layers.
In: Physical review, B = condensed matter [Melville, NY] 71(2005), S. 125213-1 - 125213-5

Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates.
In: Journal of applied physics [Melville, NY] 97(2005), S. 103507-1 - 103507-6

GaInN quantum wells grown on facets of selectively grown GaN stripes.
In: Applied physics letters [Melville, NY] 87(2005), S. 182111-1 - 182111-3

In situ monitoring of the stress evolution in growing group-III-nitride layers.
In: Journal of crystal growth [Amsterdam] 275(2005), S. 209 - 216

Local luminescence of ZnO nanowire-covered surface : a cathodoluminescence microscopy study.
In: Applied physics letters [Melville, NY] 86(2005), Nr. 2, S. 023113-1 - 023113-3

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Materials science forum [Aedermannsdorf] 483/485(2005), S. 1065 - 1068 . - [Silicon carbide and related materials, ECSCRM 2004 (5th European conference Bologna, Italy August 31 - September 4, 2004). - proceedings]

Near-red emission from site-controlled pyramidal InGaN quantum dots.
In: Applied physics letters [Melville, NY] 87(2005), S. 163121-1 - 163121-3

Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2.
In: Applied physics letters [Melville, NY] 86(2005), S. 091909-1 - 091909-3

ZnO MOVPE growth : from local impurity incorporation towards p-type doping.
In: Superlattices and microstructures [London] 38(2005), S. 245 - 255

A two-step organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001).
In: Journal of crystal growth [Amsterdam] 267(2004), S. 140 - 144

Bound exciton and donor-acceptor pair recombinations in ZnO.
In: Physica status solidi, B = basic research [Berlin] 241(2004), Nr. 2, S. 231 - 260

Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 11, S. 1976 - 1978

Evolution of stress in GaN heteroepitaxy on AIN/Si(111) : from hydrostatic compressive to biaxial tensile.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 16, S. 3441 - 3443

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1-xN layers.
In: Journal of applied physics [New York, NY] 95(2004), Nr. 9, S. 4670 - 4674

Heteroepitaxy and nitrogen doping of high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 800 - 804

Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111).
In: Journal of crystal growth [Amsterdam] 272(2004), S. 251 - 256

Localization versus field effects in single InGaN quantum wells.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 1, S. 58 - 60

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 785 - 788

On the growth mechanism and optical properties of ZnO multi-layer nanosheets.
In: Applied physics / a [Berlin [u.a.]] 79(2004), S. 1895 - 1900

Ostwald ripening and flattening of epitaxial ZnO Layers during in situ annealing in metalorganic vapor phase epitaxy.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 9, S. 1496 - 1498

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence.
In: Nanotechnology [Bristol] 15(2004), S. 1401 - 1404

Self-organized domain formation in low-dislocation-density GaN.
In: Superlattices and microstructures [London] 36(2004), S. 833 - 847

Strains and stresses in GaN heteroepitaxy - sources and control.
In: Advances in solid state physics [Berlin] 44(2004), S. 313 - 325

Suppressing of optical quenching of deep-to-band transitions in AlGaN and GaN/AlGaN heterostructures.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 18, S. 3498 - 3500

Deep defects in Fe-doped GaN layers analysed by electrical and photoelectrical spectroscopic methods.
In: Ng, Hock Min (Hrsg.) ; ... (Hrsg): GaN and related alloys : 2003 (Symposium Boston, USA December 1 - 5, 2003). Warrendale, Pa. : Materials Research Society, 2004, S. Y.5.37.1 - Y.5.37.6 (Materials Research Society symposium proceedings 798)

Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 23, S. 4083 - 4085

Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 42(2003), Nr. 9 A/B, S. L1057 - L1060

Electrical field effect of H-implantation induced defect states in GaN.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 3, S. 403 - 405

Epitaxial lateral overgrowth of GaN on Si (111).
In: Journal of applied physics [New York, NY] 93(2003), Nr. 1, S. 182 - 185

GaN based laser diodes - epitaxial growth and device fabrication.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1846 - 1859

Gallium-nitride-based devices on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1940 - 1949

MOVPE growth of GaN on Si(111) substrates.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 556 - 562

Metal organic vapor phase epitaxy of ZnO on GaN/Si(111) using tertiary-Butanol as O-Precursor.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 12, S. 7474 - 7477

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 14 - 19

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1583 - 1606

Non-planar selective area growth and characterization of GaN and AlGaN.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 10, S. 6276 - 6283

Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy.
In: Applied physics letters [Melville, NY] 83(2003), Nr. 16, S. 3290 - 3292

Optical investigations on excitons bound to impurities and dislocations in ZnO.
In: Optical materials [Amsterdam] 23(2003), S. 33 - 37

Optical micro-characterization of group-III-nitrides : correlation of structural, electronic and optical properties.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1795 - 1815

Reduction of stress at the initial stages of GaN growth on Si(111).
In: Applied physics letters [Melville, NY] 82(2003), Nr. 1, S. 28 - 30

Stress analysis of AlxGa1-xN films with microcracks.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 3, S. 367 - 369

The origin of the PL photoluminescence stokes shift in ternary group-III nitrides : field effects and localization.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1835 - 1845

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy.
In: Journal of crystal growth [Amsterdam] 258(2003), S. 232 - 250

Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged ba cathodoluminescence microscopy.
In: Physica status solidi, A = applied research [Berlin] 200(2003), Nr. 1, S. 183 - 186

Analysis of quantum dot formation and exciton localisation in the (Zn, Cd) (S, Se) system.
In: Physica status solidi, A = applied research [Berlin] 229(2002), Nr. 1, S. 529 - 532

Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum- wells on Si(111) substrates.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 9, S. 1591 - 1593

Bright, crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 2, S. 308 - 313

Correlation of surface potential, free carrier concentration and light emmission in ELO GaN growth domains.
In: Physica status solidi, B = basic research [Berlin] 234(2002), Nr. 3, S. 911 - 914

Direct observation of Ga-rich microdomains in crack-free AIGaN grown on patterned GaN/sapphire substrates.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 17, S. 3093 - 3095

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 25, S. 4712 - 4714

Electrical characterization of deep defect states in galliumnitride coimplanted with magnesium and sulfur ions.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 85 - 89

Electrical characterization of magnesium implanted gallium nitride.
In: Journal of applied physics [New York, NY] 91(2002), Nr. 1, S. 178 - 182

Growth of ZnO layers by metal organic chemical vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 1, S. 189 - 194

High quality GaN grown by facet-controlled ELO (FACELO) technique.
In: Physica status solidi, A = applied research [Berlin] 194(2002), Nr. 2, S. 545 - 549

Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy.
In: Journal of applied physics [New York, NY] 92(2002), Nr. 3, S. 1307 - 1316

Lateral redistribution of excitons in cdSe/ZnSe quantum dots.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 3, S. 473 - 475

Microscopic analysis of high quality thick ZnO CVD layers : imaging of growth domains, strain relaxation, and impurity incorporation.
In: Physica status solidi, B = basic research [Berlin] 229(2002), Nr. 2, S. 891 - 895

Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 19, S. 3524 - 3526

Microscopic evidence of point defect incorporation in laterally overgrown GaN.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 16, S. 2866 - 2868

Modulated growth of thick GaN with hydride vapor phase epitaxy.
In: Journal of crystal growth [Amsterdam] 234(2002), S. 616 - 622

Redistribution of localised excitons in CdSe/ZnSe quantum dot structures.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 88(2002), S. 302 - 306

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 19 - 23

Strain in cracked AlGaN layers.
In: Journal of applied physics [New York, NY] 92(2002), Nr. 1, S. 118 - 123

Bright future for GaN-ON-silicon.
In: Chang, P. C. (Hrsg.) ; Buckley, D. N. (Hrsg.) ; ... (Hrsg.): Compound semiconductors XXXVII (SOTAPOCS XXXVII) and Narrow bandgap optoelectronic materials and devices (held at the 202nd meeting of the Electrochemical Society Salt Lake City, October 20-25, 2002). - state-of-the-art-programme. Pennington, NJ : Electrochemical Society, 2002, S. 300 - 310 (Proceedings volume // Electrochemical Society 2002-14)

(AlGa)As composition profile analysis of trenches overgrown with MOVPE.
In: Journal of crystal growth [Amsterdam] 222(2001), S. 465 - 470

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111) : impact of an AlGaN/GaN multilayer.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 15, S. 2211 - 2213

Crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 155 - 158

Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 82(2001), S. 85 - 87

Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, S. 772 - 774

Effects of substrate pretreatment and buffer layers on GaN epilayers grown by hybride vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 425 - 428

Epitaxial lateral overgrowth of GaN on Silicon (111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 2, S. 733 - 737

Flow modulation growth of thick GaN by hybride vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 453 - 456

Implantation induced defect states in Gallium Nitride and their annealing behaviour.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 1, S. 325 - 329

Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy.
In: Physica, B = condensed matter [Amsterdam] 308/310(2001), S. 89 - 92

Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, 727 - 729

Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 11(2001), Nr. 2/3, S. 228 - 232

Optical micro-characterization of complex GaN structures.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 2, S. 419 - 424

Spatial variation of luminescence in thick GaN films.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 9, S. 1222 - 1224

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning catholuminescence.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 1, S. 35 - 39

Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 24, S. 3827 - 3829

Spectroscopy of individual dislocation bundles in thin ZnSe films.
In: Physica status solidi, A = applied research [Berlin] 186(2001), Nr. 1, S. R10 - R12

Three-dimensional imaging of ELOG growth domains by scanning cathodoluminescence tomography.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 2, S. 751 - 755

Cathodoluminescence microscopy and micro-Raman spectroscopy of growth domains formed during epitaxial lateral overgrowth of GaN.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 280 - 283 (IPAP conference series 1)

Correlation between deep defects and persistent photoconductivity in undoped GaN and AlGaN layers.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 467 - 470 (IPAP conference series 1)

Electrical characterization of ion implantation induced defect states in gallium nitride.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 625 - 628 (IPAP conference series 1)

InGaN/GaN blue light emitter grown on Si(111) using an AlAs seed layer.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 845 - 848 (IPAP conference series 1)

Time-modulated growth of thick GaN by hydride vapor phase epitaxy : suppression of dislocations.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 27 - 29 (IPAP conference series 1)

}... Spatially resolved spectroscopy at micro-cracks in AlGaN layers.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 475 - 478 (IPAP conference series 1)

A comparison of the hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films.
In: Journal of applied physics [New York, NY] 88(2000), Nr. 4, S. 1811 - 1817

Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD.
In: Physica status solidi, A = applied research [Berlin] 180(2000), S. 327 - 332

Crystalline and optical properties of ELO GaN by HVPE using Tungsten mask.
In: IEICE transactions on electronics, E = english transactions [Tokyo] 83(2000), Nr. 4, S. 620 - 626

Exciton dynamics in ZnCdSe/ZnSe ridge quantum wires.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 7(2000), S. 526 - 530 Unter URL: http://www.elsevier.nl/locate/physe (Stand vom: 28.06.2000)

GaN/SiC heterojunctions grown by LP-CVD.
In: Solid state electronics : SSE [London] 44(2000), S. 271 - 275

Local stress analysis of epitaxial laterally-overgrown GaN.
In: The journal of the japan society of applied physics [Tokyo] 39(2000), Nr. 10 A, Part 2, S. L958 - L960

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks : a method to map the free-carrier concentration of thick GaN samples.
In: Applied physics letters [Knoxville, Tenn.] 76(2000), Nr. 23, S. 3418 - 3420

Optical and structural characterization of a self-aligned single electron transitor structure by cathodoluminescence microscopy.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 7(2000), S. 363 - 366 Unter URL: http://www.elsevier.nl/locate/physe (Stand vom: 28.06.2000)

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy.
In: Applied physics letters [Knoxville, Tenn.] 77(2000), Nr. 4, S. 546 - 548

Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 39(2000), Nr. 2B, S. L129 - L132

The origin of optical gain in cubic InGaN grown by molecular beam epitaxy.
In: Applied physics letters [Knoxville, Tenn.] 76(2000), Nr. 20, S. 2832 - 2834

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN.
In: Journal of luminescence [Amsterdam] 87/89(2000), Nr. 1/4, S. 1192 - 11956

Comparison of different epitaxial lateral overgrowth GaN structures using SiO2 and Tungsten mask by cathodoluminescence microscopy and micro-Raman spectroscopy.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1483 - 1486 (Materials science forum 338/342)

Enhancement of UV-sensitivity in GaN / GaAs heterostructures by Si-doping.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1591 - 1594 (Materials science forum 338/342)

Impact of epitaxial lateral overgrowth on the recombination dynamics in GaN determinated by time resolved micro-photoluminescence spectroscopy.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1575 - 1578 (Materials science forum 338/342)