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Improving GaN-on-silicon properties for GaN device epitaxy
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Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
In: Applied physics letters. - Melville, NY : AIP; 96.2010, 17, Art. 172102, insges. 3 S.

GaInN-based LED structures on selectively grown semi-polar crystal facets
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, 2010

Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator
In: Electrochemical and solid-state letters: a joint publication of the Electrochemical Society and the Institute of Electrical and Electronics Engineers - Pennington, NJ: Soc., 1998, 13.2010, 10, S. H343-H345

Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
In: Applied physics letters. - Melville, NY : AIP, Bd. 97.2010, 18, S. 181105-1-181105-3

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, insges. 12 S., 2010

Light extraction from GaN-based LED structures on silicon-on-insulator substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 1, S. 88-91

Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 7/8, S. 2140-2143

InGaN/GaN light-emitting diodes on Si(1 1 0) substrates grown by metalorganic vapour phase epitaxy
In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 42.2009, 5, Art. 055107, insgesamt 5 S.

AllnN/GaN based multi quantum well structures - growth and optical proberties
In: Physica status solidi / C - Berlin: Wiley-VCH, 2002 . - 2009, insges. 4 S.

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009, 3, insges. 3 S.

Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes - tubes, spirals, and curved sheets
In: American Chemical Society : ACS nano . - Washington, DC : ACS, Bd. 3.2009, 7, S. 1663-1668

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al x Ga 1-x N on Si (111)
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 14, S. 3742-3748

MOVPE growth of high-quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV-LEDs
In: Physica status solidi / C - Berlin: Wiley-VCH, 2002 . - 2009, insges. 4 S.

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
In: Applied physics letters / publ. by the American Institute of Physics - Melville, NY: AIP, 1962, Bd. 95.2009, 24, Art. 242101

Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.

Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 11, S. 2575-2577

GaN-based deep green light emitting diodes on silicon-on-insulator substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 2, S. 822-825

A-plane GaN epitaxial lateral overgrowth structures - growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 21, insges. 3 S.

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
In: Journal of applied physics . - Melville, NY : AIP, Bd. 104.2008, 8, S. 083510-1-083510-7

Structural and optical proberties of nonpolar GaN thin films
In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 17, S. 171904-1-171904-3

Time-resolved cathodoluminescence of Mg-doped GaN
In: Applied physics letters . - Melville, NY : AIP, Bd. 93.2008, 15, S. 151901-1-151901-3

MOVPE growth and characterization of AllnN FET structures on Si(1 1 1)
In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates. - Warrendale, Pa. : MRS, insges. 6 S., 2008 - (Materials Research Society symposium proceedings; 1068) ; Kongress: MRS Spring Meeting; (San Francisco, Calif.) : 2008.03.24-28

MOVPE growth of blue In xGa 1-x/GaN LEDs on 150 mm Si(001)
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 5.2008, 6, S. 2238-2240

Zinc oxide and related materials - symposium held November 27 - 30, 2006, Boston, Massachusetts, U.S.A. ; [Symposium K, "Zinc Oxide and Related Materials", held ... at the 2006 MRS fall meeting]
In: Warrendale, Pa.: Materials Research Society, 2007; XV, 440 S.: Ill., graph. Darst. - (Materials Research Society symposium proceedings; 957), ISBN 978-1-558-99914-5 ; Kongress: Symposium K: Zinc Oxide and Related Materials; (Boston, Mass.) : 2006.11.27-30 ; MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Blue light emitting diodes on Si(001) grown by MOVPE
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 4.2007, 1, S. 41-44

Complex excitonic recombination kinetics in ZnO - capture, relaxation, and recombination from steady state
In: Applied physics letters . - Melville, NY : AIP, Bd. 90.2007, 4, S. 041917, insges. 3 S.

Crystallographic and electric proberties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 299.2007, 2, S. 399-403

Epitaxy of GaN on silicon - impact of symmetry and surface reconstruction
In: New journal of physics . - London : IOP Publ., Bd. 9.2007, 10, insges. 10 S.

Fabry-perot effects in InGaN/GaN heterostructures on Si-substrate
In: Journal of applied physics . - Melville, NY : AIP, Bd. 101.2007, 3, S. 033113, insges. 4 S.

Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 300.2007, 1, S. 170-175

Homoepitaxy of ZnO - from the substrates to doping
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 244.2007, 5, S. 1451-1457

Laser-interface lithography tailored for highly symmetrically arranged ZnO nanowire arrays
In: Small . - Weinheim : Wiley-VCH Verl., Bd. 3.2007, 1, S. 76-80

Metal-organic vapor phase epitaxy and properties of AllnN in the whole compositional range
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 90.2007, S. 022105-1-022105-3

Vapour transport growth of ZnO nanorods
In: Applied physics . - Berlin : Springer, Bd. 88.2007, 1, S. 17-20

Growth and characterization of homoepitaxial ZnO thin films growth by CVD
In: Zinc oxide and related materials. - Warrendale, Pa. : Materials Research Society, insges. 6 S., 2007 - (Materials Research Society symposium proceedings; 957) ; Kongress: MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Metalorganic vapor phase epitaxy of ZnO - towards p-type conductivity
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 15 S., 2007 - (Proceedings of SPIE; 6474)

Thin film growth of ZnO and its relation to substrate proberties
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 9 S., 2007 - (Proceedings of SPIE; 6474)

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1587-1590

Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al-2O-3
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 4, S. 1046-1050

Critial aspects of high temperature MOCVD growth of AIN epilayers on 6H-SiC substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1392-1395

Direct imaging of phase separation in ZnCdO layers
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 88.2006, 6, S. 061915

Growth of single-domain GaN on Si(0 0 1) by metalorganic vapor-phase epitaxy
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 289.2006, 2, S. 485-488

MBE growth of ZnO on sapphire employing hydrogen peroxide as an oxidant
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 287.2006, 1, S. 7-11

MOVPE growth of GaN on Si - substrates and strain
In: Thin solid films . - Amsterdam [u.a.] Elsevier, Bd. 515.2007, 10, S. 4356-4361

MOVPE growth of high-quality AIN
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 297.2006, 2, S. 306-210

Microscopic luminescence properties of ZnO and Zno based heterostructures
In: Acta physica Polonica . - Warsaw : Acad. Inst., Bd. 110.2006, 2, S. 103-110

Optical and structural microanalysis of GaN grown on SiN submonolayers
In: Journal of applied physics . - [S.l.], Bd. 99.2006, S. 123518-1-123518-8

Strong potential profile fluctuation and effective localization process in InGaN/GaN multiple quamtum wells grown on {10-1m} faceted surface GaN template
In: Journal of applied physics . - [S.l.], Bd. 100.2006, S. 013528-1-013528-5

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 203.2006, 7, S. 1778-1782

Characterization of deep defects responsible for the quenching behavior in undoped GaN layers.
In: Physical review, B = condensed matter [Melville, NY] 71(2005), S. 125213-1 - 125213-5

Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates.
In: Journal of applied physics [Melville, NY] 97(2005), S. 103507-1 - 103507-6

GaInN quantum wells grown on facets of selectively grown GaN stripes.
In: Applied physics letters [Melville, NY] 87(2005), S. 182111-1 - 182111-3

In situ monitoring of the stress evolution in growing group-III-nitride layers.
In: Journal of crystal growth [Amsterdam] 275(2005), S. 209 - 216

Local luminescence of ZnO nanowire-covered surface : a cathodoluminescence microscopy study.
In: Applied physics letters [Melville, NY] 86(2005), Nr. 2, S. 023113-1 - 023113-3

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Materials science forum [Aedermannsdorf] 483/485(2005), S. 1065 - 1068 . - [Silicon carbide and related materials, ECSCRM 2004 (5th European conference Bologna, Italy August 31 - September 4, 2004). - proceedings]

Near-red emission from site-controlled pyramidal InGaN quantum dots.
In: Applied physics letters [Melville, NY] 87(2005), S. 163121-1 - 163121-3

Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2.
In: Applied physics letters [Melville, NY] 86(2005), S. 091909-1 - 091909-3

ZnO MOVPE growth : from local impurity incorporation towards p-type doping.
In: Superlattices and microstructures [London] 38(2005), S. 245 - 255

A two-step organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001).
In: Journal of crystal growth [Amsterdam] 267(2004), S. 140 - 144

Bound exciton and donor-acceptor pair recombinations in ZnO.
In: Physica status solidi, B = basic research [Berlin] 241(2004), Nr. 2, S. 231 - 260

Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 11, S. 1976 - 1978

Evolution of stress in GaN heteroepitaxy on AIN/Si(111) : from hydrostatic compressive to biaxial tensile.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 16, S. 3441 - 3443

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1-xN layers.
In: Journal of applied physics [New York, NY] 95(2004), Nr. 9, S. 4670 - 4674

Heteroepitaxy and nitrogen doping of high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 800 - 804

Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111).
In: Journal of crystal growth [Amsterdam] 272(2004), S. 251 - 256

Localization versus field effects in single InGaN quantum wells.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 1, S. 58 - 60

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 785 - 788

On the growth mechanism and optical properties of ZnO multi-layer nanosheets.
In: Applied physics / a [Berlin [u.a.]] 79(2004), S. 1895 - 1900

Ostwald ripening and flattening of epitaxial ZnO Layers during in situ annealing in metalorganic vapor phase epitaxy.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 9, S. 1496 - 1498

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence.
In: Nanotechnology [Bristol] 15(2004), S. 1401 - 1404

Self-organized domain formation in low-dislocation-density GaN.
In: Superlattices and microstructures [London] 36(2004), S. 833 - 847

Strains and stresses in GaN heteroepitaxy - sources and control.
In: Advances in solid state physics [Berlin] 44(2004), S. 313 - 325

Suppressing of optical quenching of deep-to-band transitions in AlGaN and GaN/AlGaN heterostructures.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 18, S. 3498 - 3500

Deep defects in Fe-doped GaN layers analysed by electrical and photoelectrical spectroscopic methods.
In: Ng, Hock Min (Hrsg.) ; ... (Hrsg): GaN and related alloys : 2003 (Symposium Boston, USA December 1 - 5, 2003). Warrendale, Pa. : Materials Research Society, 2004, S. Y.5.37.1 - Y.5.37.6 (Materials Research Society symposium proceedings 798)

Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 23, S. 4083 - 4085

Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 42(2003), Nr. 9 A/B, S. L1057 - L1060

Electrical field effect of H-implantation induced defect states in GaN.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 3, S. 403 - 405

Epitaxial lateral overgrowth of GaN on Si (111).
In: Journal of applied physics [New York, NY] 93(2003), Nr. 1, S. 182 - 185

GaN based laser diodes - epitaxial growth and device fabrication.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1846 - 1859

Gallium-nitride-based devices on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1940 - 1949

MOVPE growth of GaN on Si(111) substrates.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 556 - 562

Metal organic vapor phase epitaxy of ZnO on GaN/Si(111) using tertiary-Butanol as O-Precursor.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 12, S. 7474 - 7477

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 14 - 19

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1583 - 1606

Non-planar selective area growth and characterization of GaN and AlGaN.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 10, S. 6276 - 6283

Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy.
In: Applied physics letters [Melville, NY] 83(2003), Nr. 16, S. 3290 - 3292

Optical investigations on excitons bound to impurities and dislocations in ZnO.
In: Optical materials [Amsterdam] 23(2003), S. 33 - 37

Optical micro-characterization of group-III-nitrides : correlation of structural, electronic and optical properties.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1795 - 1815

Reduction of stress at the initial stages of GaN growth on Si(111).
In: Applied physics letters [Melville, NY] 82(2003), Nr. 1, S. 28 - 30

Stress analysis of AlxGa1-xN films with microcracks.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 3, S. 367 - 369

The origin of the PL photoluminescence stokes shift in ternary group-III nitrides : field effects and localization.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1835 - 1845

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy.
In: Journal of crystal growth [Amsterdam] 258(2003), S. 232 - 250

Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged ba cathodoluminescence microscopy.
In: Physica status solidi, A = applied research [Berlin] 200(2003), Nr. 1, S. 183 - 186

Analysis of quantum dot formation and exciton localisation in the (Zn, Cd) (S, Se) system.
In: Physica status solidi, A = applied research [Berlin] 229(2002), Nr. 1, S. 529 - 532

Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum- wells on Si(111) substrates.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 9, S. 1591 - 1593

Bright, crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 2, S. 308 - 313

Correlation of surface potential, free carrier concentration and light emmission in ELO GaN growth domains.
In: Physica status solidi, B = basic research [Berlin] 234(2002), Nr. 3, S. 911 - 914

Direct observation of Ga-rich microdomains in crack-free AIGaN grown on patterned GaN/sapphire substrates.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 17, S. 3093 - 3095

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 25, S. 4712 - 4714

Electrical characterization of deep defect states in galliumnitride coimplanted with magnesium and sulfur ions.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 85 - 89

Electrical characterization of magnesium implanted gallium nitride.
In: Journal of applied physics [New York, NY] 91(2002), Nr. 1, S. 178 - 182

Growth of ZnO layers by metal organic chemical vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 1, S. 189 - 194

High quality GaN grown by facet-controlled ELO (FACELO) technique.
In: Physica status solidi, A = applied research [Berlin] 194(2002), Nr. 2, S. 545 - 549

Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy.
In: Journal of applied physics [New York, NY] 92(2002), Nr. 3, S. 1307 - 1316

Lateral redistribution of excitons in cdSe/ZnSe quantum dots.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 3, S. 473 - 475

Microscopic analysis of high quality thick ZnO CVD layers : imaging of growth domains, strain relaxation, and impurity incorporation.
In: Physica status solidi, B = basic research [Berlin] 229(2002), Nr. 2, S. 891 - 895

Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 19, S. 3524 - 3526

Microscopic evidence of point defect incorporation in laterally overgrown GaN.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 16, S. 2866 - 2868

Modulated growth of thick GaN with hydride vapor phase epitaxy.
In: Journal of crystal growth [Amsterdam] 234(2002), S. 616 - 622

Redistribution of localised excitons in CdSe/ZnSe quantum dot structures.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 88(2002), S. 302 - 306

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 19 - 23

Strain in cracked AlGaN layers.
In: Journal of applied physics [New York, NY] 92(2002), Nr. 1, S. 118 - 123

Bright future for GaN-ON-silicon.
In: Chang, P. C. (Hrsg.) ; Buckley, D. N. (Hrsg.) ; ... (Hrsg.): Compound semiconductors XXXVII (SOTAPOCS XXXVII) and Narrow bandgap optoelectronic materials and devices (held at the 202nd meeting of the Electrochemical Society Salt Lake City, October 20-25, 2002). - state-of-the-art-programme. Pennington, NJ : Electrochemical Society, 2002, S. 300 - 310 (Proceedings volume // Electrochemical Society 2002-14)

(AlGa)As composition profile analysis of trenches overgrown with MOVPE.
In: Journal of crystal growth [Amsterdam] 222(2001), S. 465 - 470

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111) : impact of an AlGaN/GaN multilayer.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 15, S. 2211 - 2213

Crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 155 - 158

Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 82(2001), S. 85 - 87

Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, S. 772 - 774

Effects of substrate pretreatment and buffer layers on GaN epilayers grown by hybride vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 425 - 428

Epitaxial lateral overgrowth of GaN on Silicon (111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 2, S. 733 - 737

Flow modulation growth of thick GaN by hybride vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 453 - 456

Implantation induced defect states in Gallium Nitride and their annealing behaviour.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 1, S. 325 - 329

Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy.
In: Physica, B = condensed matter [Amsterdam] 308/310(2001), S. 89 - 92

Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, 727 - 729

Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 11(2001), Nr. 2/3, S. 228 - 232

Optical micro-characterization of complex GaN structures.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 2, S. 419 - 424

Spatial variation of luminescence in thick GaN films.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 9, S. 1222 - 1224

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning catholuminescence.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 1, S. 35 - 39

Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 24, S. 3827 - 3829

Spectroscopy of individual dislocation bundles in thin ZnSe films.
In: Physica status solidi, A = applied research [Berlin] 186(2001), Nr. 1, S. R10 - R12

Three-dimensional imaging of ELOG growth domains by scanning cathodoluminescence tomography.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 2, S. 751 - 755

Cathodoluminescence microscopy and micro-Raman spectroscopy of growth domains formed during epitaxial lateral overgrowth of GaN.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 280 - 283 (IPAP conference series 1)

Correlation between deep defects and persistent photoconductivity in undoped GaN and AlGaN layers.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 467 - 470 (IPAP conference series 1)

Electrical characterization of ion implantation induced defect states in gallium nitride.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 625 - 628 (IPAP conference series 1)

InGaN/GaN blue light emitter grown on Si(111) using an AlAs seed layer.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 845 - 848 (IPAP conference series 1)

Time-modulated growth of thick GaN by hydride vapor phase epitaxy : suppression of dislocations.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 27 - 29 (IPAP conference series 1)

}... Spatially resolved spectroscopy at micro-cracks in AlGaN layers.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 475 - 478 (IPAP conference series 1)

A comparison of the hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films.
In: Journal of applied physics [New York, NY] 88(2000), Nr. 4, S. 1811 - 1817

Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD.
In: Physica status solidi, A = applied research [Berlin] 180(2000), S. 327 - 332

Crystalline and optical properties of ELO GaN by HVPE using Tungsten mask.
In: IEICE transactions on electronics, E = english transactions [Tokyo] 83(2000), Nr. 4, S. 620 - 626

Exciton dynamics in ZnCdSe/ZnSe ridge quantum wires.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 7(2000), S. 526 - 530 Unter URL: http://www.elsevier.nl/locate/physe (Stand vom: 28.06.2000)

GaN/SiC heterojunctions grown by LP-CVD.
In: Solid state electronics : SSE [London] 44(2000), S. 271 - 275

Local stress analysis of epitaxial laterally-overgrown GaN.
In: The journal of the japan society of applied physics [Tokyo] 39(2000), Nr. 10 A, Part 2, S. L958 - L960

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks : a method to map the free-carrier concentration of thick GaN samples.
In: Applied physics letters [Knoxville, Tenn.] 76(2000), Nr. 23, S. 3418 - 3420

Optical and structural characterization of a self-aligned single electron transitor structure by cathodoluminescence microscopy.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 7(2000), S. 363 - 366 Unter URL: http://www.elsevier.nl/locate/physe (Stand vom: 28.06.2000)

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy.
In: Applied physics letters [Knoxville, Tenn.] 77(2000), Nr. 4, S. 546 - 548

Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 39(2000), Nr. 2B, S. L129 - L132

The origin of optical gain in cubic InGaN grown by molecular beam epitaxy.
In: Applied physics letters [Knoxville, Tenn.] 76(2000), Nr. 20, S. 2832 - 2834

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN.
In: Journal of luminescence [Amsterdam] 87/89(2000), Nr. 1/4, S. 1192 - 11956

Comparison of different epitaxial lateral overgrowth GaN structures using SiO2 and Tungsten mask by cathodoluminescence microscopy and micro-Raman spectroscopy.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1483 - 1486 (Materials science forum 338/342)

Enhancement of UV-sensitivity in GaN / GaAs heterostructures by Si-doping.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1591 - 1594 (Materials science forum 338/342)

Impact of epitaxial lateral overgrowth on the recombination dynamics in GaN determinated by time resolved micro-photoluminescence spectroscopy.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1575 - 1578 (Materials science forum 338/342)