Prof. Strittmatter

Hochschullehrer/-in

Prof. Dr. rer. nat. habil. André Strittmatter

Abteilung Halbleiterepitaxie
Institut für Physik (IfP)
Universitätsplatz 2, 39106 Magdeburg, G16-219
Projekte
Publikationen

2020

Abstract

Berger, Christoph;  Neugebauer, Silvio;  Seneza, Cleophace;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André 

GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 8.3

Seneza, Cleophace;  Berger, Christoph;  Witte, Hartmut;  Bläsing, Jürgen;  Dempewolf, Anja;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27

Witte, Hartmut;  Seneza, Cleophace;  Sana, Prabha;  Berger, Christoph;  Dadgar, Armin;  Strittmatter, André 

Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.5

Begutachteter Zeitschriftenartikel

Yaccuzzi, Exequiel;  Di Napoli, Solange;  Liscia, Emiliano;  Suárez, Sergio;  Alurralde, Martín;  Strittmatter, André;  Plá, Juan;  Giudici, Paula 

Experimental re-evaluation of proton penetration ranges in GaAs and InGaP
In: Journal of physics / D - Bristol: IOP Publ. . - 2020

Sheng, Bowen;  Schmidt, Gordon;  Bertram, Frank;  Veit, Peter;  Wang, Yixin;  Wang, Tao;  Rong, Xin;  Chen, Zhaoying;  Wang, Ping;  Bläsing, Jürgen;  Miyake, Hideto;  Li, Hongwei;  Guo, Shiping;  Qin, Zhixin;  Strittmatter, André;  Shen, Bo;  Christen, Jürgen;  Wang, Xinqiang 

Individually resolved luminescence from closely stacked GaN/AlN quantum wells
In: Photonics research - Washington, DC: OSA, Bd. 8.2020, 4, S. 610-615

Podemski, Paweł;  Musiał, Anna;  Gawarecki, Krzysztof;  Maryński, Aleksander;  Gontar, Przemysław;  Bercha, Artem;  Trzeciakowski, Witold A.;  Srocka, Nicole;  Heuser, Tobias;  Quandt, David;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan;  Sęk, Grzegorz 

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 m
In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116 (2020), issue 2, article 023102, 6 Seiten

Sana, Prabha;  Seneza, Cleophace;  Berger, Christoph;  Witte, Hartmut;  Schmidt, Marc-Peter;  Bläsing, Jürgen;  Neugebauer, Silvio;  Hörich, Florian;  Dadgar, Armin;  Strittmatter, André 

Low-resistivity vertical current transport across AlInN/GaN interfaces
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ. . - 2020, insges. 12 S.

Kupko, Timm;  Helversen, Martin;  Rickert, Lucas;  Schulze, Jan-Hindrik;  Strittmatter, André;  Gschrey, Manuel;  Rodt, Sven;  Reitzenstein, Stephan;  Heindel, Tobias 

Tools for the performance optimization of single-photon quantum key distribution
In: npj Quantum information - London: Nature Publ. Group, Vol. 6(2020), article number 29, 8 Seiten

Challa, Seshagiri Rao;  Vega, Nahuel A.;  Mueller, Nahuel A.;  Kristukat, Christian;  Debray, Mario E.;  Witte, Hartmut;  Dadgar, Armin;  Strittmatter, André 

Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer
In: IEEE transactions on electron devices: ED ; a publication of the IEEE Electron Devices Society/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE . - 2020, insges. 5 S.

Buchbeitrag

Schmidt, Gordon;  Berger, Christoph;  Dadgar, Armin;  Bertram, Frank;  Veit, P.;  Metzner, Susanne;  Strittmatter, André;  Christen, Jürgen;  Jagsch, S. T.;  Wagner, M. R.;  Hoffmann, A. 

Nitride microcavities and single quantum dots for classical and non-classical light emitters
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)

Pohl, Udo W.;  Strittmatter, André;  Schliwa, A.;  Lehmann, M.;  Niermann, T.;  Heindel, T.;  Reitzenstein, S.;  Kantner, M.;  Bandelow, U.;  Koprucki, T.;  Wünsche, H.-J. 

Stressor-induced site control of quantum dots for single-photon sources
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 53-90 - ( Springer series in solid-state sciences; 194)

Owschimikow, Nina;  Herzog, Bastian;  Lingnau, Benjamin;  Lüdge, Kathi;  Lenz, Andrea;  Eisele, Holger;  Dähne, Mario;  Niermann, Tore;  Lehmann, Mario;  Schliwa, Andrei;  Strittmatter, André;  Pohl, Udo W. 

Submonolayer quantum dots
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 13-51 - ( Springer series in solid-state sciences; 194)

2019

Abstract

Sana, Prabha;  Berger, Christoph;  Schmidt, Marc-Peter;  Schmidt, Gordon;  Dadgar, Armin;  Bläsing, Jürgen;  Deckert, M.;  Witte, Hartmut;  Christen, Jürgen;  Strittmatter, André 

1D photonic bandgap structures for high-power GaN/InGaN laser divices
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10

Berger, Christoph;  Neugebauer, Silvio;  Seneza, Cleophace;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André 

GaN:Mg/GaN:Ge tunnel junctions for better light emitters
In: ICNS13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

Berger, Christoph 

Growth of GaN-based Quantum dot structures
In: International Symposium Semiconductor Nanophotonics, Berlin, 2019, 2019, S. -

Berger, Christoph;  Schmidt, Gordon;  Schürmann, Hannes;  Metzner, Sebastian;  Veit, Peter;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André;  Kalinoswki, S.;  Jagsch, S. T.;  Callsen, G.;  Wagner, M. R.;  Hoffmann, A. 

Growth of desorption-induced GaN quantum-dots
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3

Berger, Christoph;  Neugebauer, Silvio;  Seneza, Cleophace;  Hörich, Florian;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André 

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Sana, Prabha;  Berger, Christoph;  Witte, Hartmut;  Dabrowski, J.;  Schmidt, M.P.;  Metzner, Sebastian;  Bläsing, Jürgen;  Neugebauer, Silvio;  Dempewolf, Anja;  Schmidt, Gordon;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Sana, Prabha;  Berger, Christoph;  Witte, Hartmut;  Dabrowski, J.;  Schmidt, Marc-Peter;  Metzner, Sebastian;  Bläsing, Jürgen;  Neugebauer, Silvio;  Dempewolf, Anja;  Schmidt, Gordon;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK: 05./06. Dezember 2019 in Dresden - Dresden, 2019 . - 2019 ; [Workshop: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019]

Seneza, Cleophace;  Berger, Christoph;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André 

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Sana, Prabha;  Berger, Christoph;  Schmidt, Marc-Peter;  Schmidt, Gordon;  Dadgar, Armin;  Bläsing, Jürgen;  Witte, Hartmut;  Christen, Jürgen;  Strittmatter, André 

Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes
In: 13th International Conference on Nitride Semiconductors: July 7-12, 2019, Washington - Washington, 2019 . - 2019 ; [Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019]

Witte, Hartmut;  Fariza, Aqdas;  Neugebauer, Silvio;  Berger, Christoph;  Dadgar, Armin;  Strittmatter, André 

Metastable negative differential capacitances in GaN-based pn-and tunnel-junctions
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.2

Schmidt, Gordon;  Veit, Peter;  Metzner, Sebastian;  Berger, Christoph;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations
In: Microscopy and microanalysis: the official journal of the Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada - New York, NY: Cambridge University Press, 1995, Bd. 22.2019, S. 602-603

Sheng, B.;  Wang, Y.;  Rong, X.;  Chen, Z.;  Wang, T.;  Wang, P.;  Schmidt, Gordon;  Bertram, Frank;  Veit, Peter;  Bläsing, Jürgen;  Miyake, H.;  Li, H.;  Qin, Z.;  Strittmatter, André;  Christen, Jürgen;  Shen, B.;  Wang, X. 

Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7 ; [Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Challa, Seshagiri Rao;  Vega, N.;  Kristukat, C.;  Müller, N.A.;  Debray, M.E.;  Schmidt, Gordon;  Hörich, Florian;  Witte, Hartmut;  Christen, Jürgen;  Dadgar, Armin;  Strittmatter, André 

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTs) to heavy-ion irradiation
In: ICNS-13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

Hörich, Florian;  Kahrmann, C.;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André 

Pulsed sputter Deposition of AIN and GaN
In: ICNS-13, 13th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. 1

Schürmann, Hannes;  Schmidt, Gordon;  Berger, Christoph;  Metzner, Sebastian;  Veit, Peter;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Kalinowski, S.;  Jagsch, S. T.;  Callsen, G.;  Wagner, M. R.;  Hoffmann, A. 

Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4

Schürmann, Hannes;  Berger, Christoph;  Kang, G.;  Schmidt, Gordon;  Veit, Peter;  Bertram, Frank;  Metzner, Sebastian;  Bläsing, Jürgen;  Strittmatter, André;  Holmes, M.;  Christen, Jürgen 

Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Berger, Christoph;  Neugebauer, Silvio;  Seneza, Cleophace;  Bläsing, Jürgen;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, Andrée-Woo 

Small-area current injection in GaN-based light emitters with tunnel junctions
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5

Challa, Seshagiri Rao;  Vega, N.;  Kristukat, N.A.;  Müller, N.A.;  Debray, M.E.;  Schmidt, Gordon;  Hörich, Florian;  Witte, Hartmut;  Christen, Jürgen;  Dadgar, Armin;  Strittmatter, André 

Study of AlInN/GaN on Si high-electron-mobility Transistors (HEMTs) tolerance to heavyion irradiation
In: DRIP XVIII, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Berlin, 8-12 September 2019, 2019, S. -, Online

Challa, Seshagiri Rao;  Vega, N.;  Kristukat, C.;  Müller, N.;  Debray, M.;  Schmidt, Gordon;  Christen, Jürgen;  Hörich, Florian;  Witte, Hartmut;  Dadgar, Armin;  Strittmatter, André 

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8 ; [Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Begutachteter Zeitschriftenartikel

Herzog, Bastian;  Lingnau, Benjamin;  Kolarczik, Mirco;  Helmrich, Sophia;  Achtstein, Alexander;  Thommes, Kevin;  Alhussein, Fuad;  Quandt, David;  Strittmatter, André;  Pohl, Udo 

Broadband semiconductor light Sources operating at 1060 nm based on InAs - Sb/GaAs submonolayer quantum dots
In: IEEE journal of selected topics in quantum electronics - New York, NY: IEEE, Volume 25, issue 6 (2019), article 1900310

Mrowiński, Paweł;  Musiał, Anna;  Gawarecki, Krzysztof;  Dusanowski, Łukasz;  Heuser, Tobias;  Srocka, Nicole;  Quandt, David;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan;  Sęk, Grzegorz 

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
In: Physical review - Woodbury, NY: Inst., Volume 100, issue 11 (2019), article 115310

Sheng, Bowen;  Bertram, Frank;  Zheng, Xiantong;  Wang, Ping;  Schmidt, Gordon;  Veit, Peter;  Bläsing, Jürgen;  Chen, Zhaoying;  Strittmatter, André;  Christen, Jürgen;  Shen, Bo;  Wang, Xinqiang 

Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film
In: Japanese journal of applied physics - Bristol: IOP Publ., Volume 58, issue 6 (2019), article 065503, insgesamt 6 Seiten

Vega, Nahuel A.;  Dadgar, Armin;  Strittmatter, André;  Challa, Seshagiri Rao;  Ferreyra, Romualdo A.;  Kristukat, Christian;  Muller, Nahuel A.;  Debray, Mario E.;  Schmidt, Gordon;  Witte, Hartmut;  Christen, Jürgen 

Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs
In: IEEE transactions on nuclear science: a publication of the IEEE Nuclear and Plasma Sciences Society/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, 1963, Bd. 66.2019, 12, S. 2417-2421

Helversen, Martin;  Böhm, Jonas;  Schmidt, Marco;  Gschrey, Manuel;  Schulze, Jan-Hindrik;  Strittmatter, André;  Rodt, Sven;  Beyer, Jörn;  Heindel, Tobias;  Reitzenstein, Stephan 

Quantum metrology of solid-state single-photon sources using photon-number-resolving detectors
In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges., Volume 21, issue 3 (2019), article 035007, insgesamt 8 Seiten

Quandt, David;  Arsenijevic, Dejan;  Strittmatter, André;  Bimberg, Dieter H. 

Static and dynamic characteristics of In(AsSb)/ GaAs submonolayer lasers
In: IEEE journal of quantum electronics - New York, NY: IEEE, Bd. 55.2019, 3, S. 1-7

Buchbeitrag

Schuermann, Hannes;  Schmidt, Gordon;  Berger, Christoph;  Metzner, Sebastian;  Veit, Peter;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Kalinowski, Stefan;  Callsen, Gordon;  Jagsch, Stefan;  Wagner, Markus;  Hoffmann, Axel 

Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)

Schmidt, Marco;  Helversen, Martin;  Schlottmann, Elisabeth;  López, Marco;  Gericke, Fabian;  Schulze, Jan-Hindrik;  Strittmatter, André;  Schneider, Christian;  Kück, Stefan;  Höfling, Sven;  Heindel, Tobias;  Beyer, Jörn;  Reitzenstein, Stephan 

Photon-number-resolving transition-edge sensors for the metrology of photonic microstructures based on semiconductor quantum dots
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, Volume 10933 (2019)

2018

Abstract

Hoffmann, Axel;  Jankowski, Nadja;  Poliani, Emmanuele;  Scheel, Harald;  Wagner, Markus R.;  Fariza, Aqdas;  Lesnik, Andreas;  Hoffmann, Marc P.;  Kahrmann, Christopher;  Hörich, Florian;  Zwieryz, R.;  Kachel, K.;  Bieckermann, M.;  Bläsing, Jürgen;  Strittmatter, André;  Dadgar, Armin;  Siche, D. 

Amphoteric incorporation of carbon in GaN
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Dadgar, Armin;  Jankowski, N.;  Poliani, E.;  Wagner, M. R.;  Fariza, Aqdas;  Lesnik, Andreas;  Hoffmann, Marc P.;  Kahrmann, Christopher;  Hörich, Florian;  Bläsing, Jürgen;  Hoffmann, Axel;  Strittmatter, André 

Carbon incorporation in GaN by intrinsic and extrinsic C-doping
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Quandt, David;  Arsenijevic, Dejan;  Bimberg, Dieter;  Strittmatter, André 

Characteristics of InAsSb/GaAs submonolayer lasers
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL36.4

Schürmann, Hannes;  Bertram, Frank;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Kalinowski, S.;  Callsen, G.;  Jagsch, S. T.;  Wagner, M. R.;  Hoffmann, A.;  Christen, Jürgen 

Desorption induced formation of deep UV-emitting nanostructures
In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018 ; [Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Sana, Prabha;  Berger, Christoph;  Schmidt, Marc-Peter;  Dadgar, Armin;  Bläsing, Jürgen;  Metzner, Sebastian;  Deckert, Martin;  Witte, Hartmut;  Strittmatter, André 

Development of high brightness (In,Ga,Al)- N laser devices - theory and experiment
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018 ; [Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Berger, Christoph;  Neugebauer, Silvio;  Seneza, C.;  Bläsing, Jürgen;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Challa, Seshagiri Rao;  Vega, N.;  Kristukat, Ch.;  Debrey, M. E.;  Schmidt, Gordon;  Hörich, Florian;  Witte, Kerstin;  Christen, Jürgen;  Dadgar, Armin;  Strittmatter, André 

Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)
In: 9th Wide Band Gap Semiconductor and Components Workshop: 8-9th October 2018, ECSAT, Harwell, UK - Noordwijk: ESA-ESTEC, 2018, 2018, Devises 2

Schürmann, Hannes;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Bertram, Frank;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3

Trippel, Max;  Wieneke, Matthias;  Dadgar, Armin;  Strittmatter, André 

Laser-assisted local metalorganic vapor phase epitaxy
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018 ; [Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Neugebauer, Silvio;  Bläsing, Jürgen;  Deckert, Martin;  Lippert, Michael;  Dadgar, Armin;  Schmidt, Bertram;  Ohl, Frank W.;  Strittmatter, André 

MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic applications
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Bertram, Frank;  Schürmann, Hannes;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation
In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018 ; [Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]

Schmidt, Gordon;  Veit, Peter;  Voß, A.;  Reuper, Alexander;  Metzner, Sebastian;  Bertram, Frank;  Berger, Christoph;  Bläsing, Jürgen;  Poliani, E.;  Wagner, M. R.;  Maultzsch, J.;  Dadgar, Armin;  Strittmatter, André;  Hoffmann, A.;  Christen, Jürgen 

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Christen, Jürgen;  Schmidt, Gordon;  Veit, Peter;  Voß, A.;  Reuper, Alexander;  Metzner, Sebastian;  Bertram, Frank;  Berger, Christoph;  Bläsing, Jürgen;  Wagner, Markus R.;  Maultzsch, Janina;  Dadgar, Armin;  Strittmatter, André 

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Schmidt, Gordon;  Veit, Peter;  Schürmann, Hannes;  Petzold, Silke;  Bertram, Frank;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Schürmann, Hannes;  Bertram, Frank;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Nanoscale investigation of GaN / AlN quantum dot formation
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Challa, Seshagiri Rao;  Vega, Nahuel;  Kristukat, Christian;  Müller, N. A.;  Dabray, M. E.;  Schmidt, Gordon;  Hörich, Florian;  Witte, Hartmut;  Christen, Jürgen;  Dadgar, Armin;  Strittmatter, André 

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Schürmann, Hannes;  Schmidt, Gordon;  Berger, Christoph;  Metzner, Sebastian;  Veit, Peter;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Kalinowski, S.;  Jagsch, S.;  Hoffmann, A. 

Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018 ; [Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Schürmann, H.;  Schmidt, Gordon;  Berger, Christoph;  Metzner, Sebastian;  Veit, Peter;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Kalinowski, S.;  Hoffmann, A. 

Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Strittmatter, André 

Tunnel junction design for InGaN/GaN-based light emitters
In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018 ; [Biophotonics, Biomedical Optics, and Imaging Conference, BIOS, San Francisco, USA, 27-28 January 2018]

Artikel in Kongressband

Al-Ashouri, A.;  Merkel, B.;  Geller, M.;  Ludwig, A.;  Wieck, A. D.;  Schulze, J.-H.;  Strittmatter, André;  Kurzmann, A.;  Lorke, A. 

Photon noise suppression by a built-in feedback loop
In: ResearchGATE: scientific neetwork ; the leading professional network for scientists - Cambridge, Mass.: ResearchGATE Corp., 2010 . - 2018, insges. 11 S.

Begutachteter Zeitschriftenartikel

Schlehahn, Alexander;  Fischbach, Sarah;  Schmidt, Ronny;  Kaganskiy, Arsenty;  Strittmatter, André;  Rodt, Sven;  Heindel, Tobias;  Reitzenstein, Stephan 

A stand-alone fiber-coupled single-photon source
In: Scientific reports - [London]: Macmillan Publishers Limited, part of Springer Nature, 2011, Vol. 8.2018, Art. 1340, insgesamt 7 S.

Susilo, Norman;  Roumeliotis, Georgios G.;  Narodovitch, Michael;  Witzigmann, Bernd;  Rychetsky, Monir;  Neugebauer, Silvio;  Guttmann, Martin;  Enslin, Johannes;  Dadgar, Armin;  Niermann, Tore;  Wernicke, Tim;  Strittmatter, André;  Lehmann, Michael;  Papadimitriou, Dimitra N.;  Kneissl, Michael 

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 51.2018, 48, Art. 485103, insgesamt 6 S.

Quandt, David;  Bläsing, Jürgen;  Strittmatter, André 

Analysis of InAsSb/GaAs submonolayer stacks
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 494.2018, S. 1-7

Srocka, N.;  Musiał, A.;  Schneider, P.-I.;  Mrowiński, P.;  Holewa, P.;  Burger, S.;  Quandt, D.;  Strittmatter, André;  Rodt, S.;  Reitzenstein, S.;  Sȩk, G. 

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography
In: AIP Advances - New York, NY: American Inst. of Physics, 2011, Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.

Kaganskiy, Arsenty;  Fischbach, Sarah;  Strittmatter, André;  Rodt, Sven;  Heindel, Tobias;  Reitzenstein, Stephan 

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses
In: Optics communications - Amsterdam, 1969, Bd. 413.2018, S. 162-166

Bounouar, Samir;  Haye, Christoph;  Strauß, Max;  Schnauber, Peter;  Thoma, Alexander;  Gschrey, Manuel;  Schulze, Jan-Hindrik;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan 

Generation of maximally entangled states and coherent control in quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.

Yacoub, Hady;  Zweipfennig, Thorsten;  Kalisch, Holger;  Vescan, Aandrei;  Dadgar, Armin;  Wieneke, Matthias;  Bläsing, Jürgen;  Strittmatter, André;  Rennesson, Stephanie;  Semond, Fabrice 

Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
In: Physica status solidi / A - Weinheim: Wiley-VCH, 1970, Vol. 215.2018, 9, Art. 1700638

Reshchikov, M. A.;  Vorobiov, M.;  Demchenko, D. O.;  Ozgur, Ü.;  Morkoç, H.;  Lesnik, A.;  Hoffmann, M. P.;  Hörich, Florian;  Dadgar, Armin;  Strittmatter, André 

Two charge states of the C N acceptor in GaN - evidence from photoluminescence
In: Physical review - Woodbury, NY: Inst., 2016, Vol. 98.2018, 12-15, Art. 125207

Buchbeitrag

Žołnacz, Kinga;  Urbańczyk, Wacław;  Srocka, Nicole;  Heuser, Tobias;  Quandt, David;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan;  Musiał, Anna;  Mrowiński, Paweł;  Sek, Grzegorz;  Poturaj, Krzysztof;  Wójcik, Grzegorz;  Mergo, Paweł;  Dybka, Kamil;  Dyrkacz, Marius;  Dłubek, Michał 

Semiconductor quantum dot to fiber coupling system for 1.3m range
In: Proceedings of SPIE/ SPIE - Bellingham, Wash.: SPIE, 1963, Vol. 10674.2018, Art. 106741R

2017

Begutachteter Zeitschriftenartikel

Heindel, T.;  Thoma, A.;  Helversen, M.;  Schmidt, M.;  Schlehahn, A.;  Gschrey, M.;  Schnauber, P.;  Schulze, J.-H.;  Strittmatter, André;  Beyer, J.;  Rodt, S.;  Carmele, A.;  Knorr, A.;  Reitzenstein, S. 

A bright triggered twin-photon source in the solid state
In: Nature Communications - [London]: Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.

Neugebauer, S.;  Hoffmann, M. P.;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Niermann, T.;  Narodovitch, M.;  Lehmann, M. 

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 10, Art. 102104, insgesamt 5 S.

Fischbach, Sarah;  Kaganskiy, Arsenty;  Tauscher, Esra Burcu Yarar;  Gericke, Fabian;  Thoma, Alexander;  Schmidt, Ronny;  Strittmatter, André;  Heindel, Tobias;  Rodt, Sven;  Reitzenstein, S. 

Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.

Fariza, A.;  Lesnik, A.;  Neugebauer, S.;  Wieneke, Matthias;  Hennig, J.;  Bläsing, Jürgen;  Witte, Hartmut;  Dadgar, Armin;  Strittmatter, André 

Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.

Maryński, A.;  Mrowiński, P.;  Ryczko, K.;  Podemski, P.;  Gawarecki, K.;  Musiał, A.;  Misiewicz, J.;  Quandt, D.;  Strittmatter, André;  Rodt, S.;  Reitzenstein, S.;  Sęk, G. 

Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission
In: Acta physica Polonica / A - Warsaw: Acad. Inst, Bd. 132.2017, 2, S. 386-389

Bounouar, Samir;  Strauß, Max;  Carmele, Alexander;  Schnauber, Peter;  Thoma, Alexander;  Gschrey, Manuel;  Schulze, Hans-Peter;  Strittmatter, André;  Rodt, Sven;  Knorr, Andreas;  Reitzenstein, Stephan 

Path-controlled time reordering of paired photons in a dressed three-level cascade
In: Physical review letters - College Park, Md: APS, Vol. 118.2017, 23, Artikel 233601

Lesnik, Andreas;  Hoffmann, Marc P.;  Fariza, Aqdas;  Bläsing, Jürgen;  Witte, Hartmut;  Veit, Peter;  Hörich, Florian;  Berger, Christoph;  Hennig, Jonas;  Dadgar, Armin;  Strittmatter, André 

Properties of C-doped GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.

Strauß, Max;  Kaganskiy, Arsenty;  Voigt, Robert;  Schnauber, Peter;  Schulze, Jan-Hendrik;  Rodt, Sven;  Strittmatter, André;  Reitzenstein, Stephan 

Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 11, Art. 111101, insgesamt 5 S.

Fischbach, Sarah;  Schlehahn, Alexander;  Thoma, Alexander;  Srocka, Nicole;  Gissibl, Timo;  Ristok, Simon;  Thiele, Simon;  Kaganskiy, Arsenty;  Strittmatter, André;  Heindel, Tobias;  Rodt, Sven;  Herkommer, Alois;  Giessen, Harald;  Reitzenstein, Stephan 

Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source
In: ACS photonics - Washington, DC: ACS, Bd. 4.2017, 6, S. 1327-1332

Thoma, A.;  Schnauber, P.;  Böhm, J.;  Gschrey, M.;  Schulze, J.-H.;  Strittmatter, André;  Rodt, S.;  Heindel, T.;  Reitzenstein, S. 

Two-photon interference from remote deterministic quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 1, Art. 011104

Dissertation

Berger, Christoph;  Strittmatter, André [GutachterIn] 

Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter
In: Magdeburg, 2017, x, 149 Seiten, Illustrationen, Diagramme, 30 cm ; [Literaturverzeichnis: Seite 127-144]

2016

Begutachteter Zeitschriftenartikel

Schmidt, Gordon;  Veit, Peter;  Berger, Christoph;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Clustered quantum dots in single GaN islands formed at threading dislocations
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.

Kantner, M.;  Bandelow, U.;  Koprucki, T.;  Schulze, J.-H.;  Strittmatter, A.;  Wunsche, H.-J. 

Efficient current injection into single quantum dots through oxide-confined p-n-diodes
In: IEEE Transactions on Electron Devices, Vol. 63, 2016, Issue 5, S. 2036-2042, 10.1109/TED.2016.2538561

Thoma, A.;  Schnauber, P.;  Gschrey, M.;  Seifried, M.;  Wolters, J.;  Schulze, J.-H.;  Strittmatter, A.;  Rodt, S.;  Carmele, A.;  Knorr, A.;  Heindel, T.;  Reitzenstein, S. 

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments
In: Physical Review Letters, Vol. 116, 2016, Issue 3, 10.1103/PhysRevLett.116.033601

Schlehahn, A.;  Schmidt, R.;  Hopfmann, C.;  Schulze, J.-H.;  Strittmatter, André;  Heindel, T.;  Gantz, L.;  Schmidgall, E. R.;  Gershoni, D.;  Reitzenstein, S. 

Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 108.2016, 2, Art. 021104, insgesamt 6 S.

Sala, E.M.;  Stracke, G.;  Selve, S.;  Niermann, T.;  Lehmann, M.;  Schlichting, S.;  Nippert, F.;  Callsen, G.;  Strittmatter, A.;  Bimberg, D. 

Growth and structure of In<inf>0.5</inf>Ga<inf>0.5</inf>Sb quantum dots on GaP(001)
In: Applied Physics Letters, Vol. 109, 2016, Issue 10, 10.1063/1.4962273

Harrison, S.;  Young, M.P.;  Hodgson, P.D.;  Young, R.J.;  Hayne, M.;  Danos, L.;  Schliwa, A.;  Strittmatter, A.;  Lenz, A.;  Eisele, H.;  Pohl, U.W.;  Bimberg, D. 

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 93, 2016, Issue 8, 10.1103/PhysRevB.93.085302

Jakubczyk, T.;  Delmonte, V.;  Fischbach, S.;  Wigger, D.;  Reiter, D.E.;  Mermillod, Q.;  Schnauber, P.;  Kaganskiy, A.;  Schulze, J.-H.;  Strittmatter, A.;  Rodt, S.;  Langbein, W.;  Kuhn, T.;  Reitzenstein, S.;  Kasprzak, J. 

Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses
In: ACS Photonics, Vol. 3, 2016, Issue 12, S. 2461-2466, 10.1021/acsphotonics.6b00707

Yaccuzzi, E.;  Khachadorian, S.;  Suárez, S.;  Reinoso, M.;  Goñi, A. R.;  Strittmatter, André;  Hoffmann, A.;  Giudici, P. 

Investigation of proton damage in III-V semiconductors by optical spectroscopy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, 1931, Vol. 119.2016, 23, Art. 235702

Yaccuzzi, E.;  Khachadorian, S.;  Suárez, S.;  Reinoso, M.;  Goñi, A.R.;  Strittmatter, A.;  Hoffmann, A.;  Giudici, P. 

Investigation of proton damage in III-V semiconductors by optical spectroscopy
In: Journal of Applied Physics, Vol. 119, 2016, Issue 23, 10.1063/1.4953585

Berger, Christoph;  Lesnik, Andreas;  Zettler, Thomas;  Schmidt, Gordon;  Veit, Peter;  Dadgar, Armin;  Bläsing, Jürgen;  Christen, Jürgen;  Strittmatter, André 

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 440.2016, S. 6-12

Fariza, Aqdas;  Lesnik, Andreas;  Bläsing, Jürgen;  Hoffmann, Marc P.;  Hörich, Florian;  Veit, Peter;  Witte, Hartmut;  Dadgar, Armin;  Strittmatter, André 

On reduction of current leakage in GaN by carbon-doping
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 109.2016, 21, Art. 212102, insgesamt 5 S.

Neugebauer, Silvio;  Metzner, Sebastian;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 118-125

Lesnik, Andreas;  Hoffmann, Marc P.;  Fariza, Aqdas;  Bläsing, Jürgen;  Witte, Hartmut;  Veit, Peter;  Hörich, Florian;  Berger, Christoph;  Hennig, Jonas;  Dadgar, Armin;  Strittmatter, André 

Properties of C-doped GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961 . - 2016, insges. 7 S.

Herzog, B.;  Lingnau, B.;  Kolarczik, M.;  Kaptan, Y.;  Bimberg, D.;  Maaßdorf, A.;  Pohl, U.W.;  Rosales, R.;  Schulze, J.-H.;  Strittmatter, A.;  Weyers, M.;  Woggon, U.;  Lüdge, K.;  Owschimikow, N. 

Strong amplitude-phase coupling in submonolayer quantum dots
In: Applied Physics Letters, Vol. 109, 2016, Issue 20, 10.1063/1.4967833

Buchbeitrag

Kantner, M.;  Bandelow, U.;  Koprucki, T.;  Schulze, J.-H.;  Strittmatter, A.;  Wunsche, H.-J. 

On current injection into single quantum dots through oxide-confined pn-diodes
In: 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016, 2016, S. 215-216, 10.1109/NUSOD.2016.7547002

2015

Begutachteter Zeitschriftenartikel

Bonato, L.;  Sala, E.M.;  Stracke, G.;  Nowozin, T.;  Strittmatter, A.;  Ajour, M.N.;  Daqrouq, K.;  Bimberg, D. 

230 s room-temperature storage time and 1.14 eV hole localization energy in In<inf>0.5</inf>Ga<inf>0.5</inf>As quantum dots on a GaAs interlayer in GaP with an AlP barrier
In: Applied Physics Letters, Vol. 106, 2015, Issue 4, 10.1063/1.4906994

Kaganskiy, Arsenty;  Gschrey, Manuel;  Schlehahn, Alexander;  Schmidt, Ronny;  Schulze, Jan-Hindrik;  Heindel, Tobias;  Strittmatter, André;  Rodt, Sven;  Reitzenstein, Stephan 

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 7, Art. 073903, insgesamt 6 S.

Bellmann, K.;  Tabataba-Vakili, F.;  Wernicke, T.;  Strittmatter, A.;  Callsen, G.;  Hoffmann, A.;  Kneissl, M. 

Desorption induced GaN quantum dots on (0001) AlN by MOVPE
In: Physica Status Solidi - Rapid Research Letters, Vol. 9, 2015, Issue 9, S. 526-529, 10.1002/pssr.201510217

Schmidt, Gordon;  Berger, Christoph;  Veit, Peter;  Metzner, Sebastian;  Bertram, Frank;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Callsen, Gordon;  Kalinowski, Stefan;  Hoffmann, Axel 

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.

Hennig, Jonas;  Dadgar, Armin;  Witte, Hartmut;  Bläsing, Jürgen;  Lesnik, Andreas;  Strittmatter, André;  Krost, Alois 

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 5.2015, 7, Art. 077146, insgesamt 8 S.

Hennig, Jonas;  Dadgar, Armin;  Witte, Hartmut;  Bläsing, Jürgen;  Lesnik, Andreas;  Strittmatter, André;  Krost, Alois 

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
In: AIP Advances. - New York, NY : American Inst. of Physics; Vol. 5.2015, 7, Art. 077146, insgesamt 9 S.

Herzog, B.;  Owschimikow, N.;  Schulze, J.-H.;  Rosales, R.;  Kaptan, Y.;  Kolarczik, M.;  Switaiski, T.;  Strittmatter, A.;  Bimberg, D.;  Pohl, U.W.;  Woggon, U. 

Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots
In: Applied Physics Letters, Vol. 107, 2015, Issue 20, 10.1063/1.4935792

Berger, Christoph;  Dadgar, Armin;  Bläsing, Jürgen;  Lesnik, Andreas;  Veit, Peter;  Schmidt, Gordon;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois;  Strittmatter, André 

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 414.2015, S. 105-109

Gschrey, M.;  Thoma, A.;  Schnauber, P.;  Seifried, M.;  Schmidt, R.;  Wohlfeil, B.;  Krüger, L.;  Schulze, J.-H.;  Heindel, T.;  Burger, S.;  Schmidt, F.;  Strittmatter, A.;  Rodt, S.;  Reitzenstein, S. 

Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography
In: Nature Communications, Vol. 6, 2015, 10.1038/ncomms8662

Schlehahn, A.;  Krüger, L.;  Gschrey, M.;  Schulze, J.-H.;  Rodt, S.;  Strittmatter, André;  Heindel, T.;  Reitzenstein, S. 

Operating single quantum emitters with a compact Stirling cryocooler
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.

Gschrey, M.;  Schmidt, R.;  Schulze, J.-H.;  Strittmatter, A.;  Rodt, S.;  Reitzenstein, S. 

Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, 2015, Issue 2, 10.1116/1.4914914

Schlehahn, A.;  Gaafar, M.;  Vaupel, M.;  Gschrey, M.;  Schnauber, P.;  Schulze, J.-H.;  Rodt, S.;  Strittmatter, André;  Stolz, W.;  Rahimi-Iman, A.;  Heindel, T.;  Koch, M.;  Reitzenstein, S. 

Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 4, Art. 041105, insgesamt 5 S.

Kießling, F.;  Niermann, T.;  Lehmann, M.;  Schulze, J.-H.;  Strittmatter, A.;  Schliwa, A.;  Pohl, U.W. 

Strain field of a buried oxide aperture
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015, Issue 7, 10.1103/PhysRevB.91.075306

Quandt, D.;  Schulze, J.-H.;  Schliwa, A.;  Diemer, Z.;  Prohl, C.;  Lenz, A.;  Eisele, H.;  Strittmatter, A.;  Pohl, U.W.;  Gschrey, M.;  Rodt, S.;  Reitzenstein, S.;  Bimberg, D.;  Lehmann, M.;  Weyland, M. 

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015, Issue 23, 10.1103/PhysRevB.91.235418

Buchbeitrag

Thoma, A.;  Schnauber, P.;  Gschrey, M.;  Schmidt, R.;  Wohlfeil, B.;  Seifried, M.;  Schulze, J.-H.;  Burger, S.;  Schmidt, F.;  Strittmatter, A.;  Rodt, S.;  Heindel, T.;  Reitzenstein, S. 

Indistinguishable photons from deterministically fabricated quantum dot microlenses
In: Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015, 2015, S. 371p

2014

Begutachteter Zeitschriftenartikel

Stubenrauch, M.;  Stracke, G.;  ArsenijeviĿ, D.;  Strittmatter, A.;  Bimberg, D. 

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots
In: Applied Physics Letters, Vol. 105, 2014, Issue 1, 10.1063/1.4887063

Berger, C.;  Dadgar, A.;  Bläsing, J.;  Lesnik, A.;  Veit, P.;  Schmidt, G.;  Hempel, T.;  Christen, J.;  Krost, A.;  Strittmatter, A. 

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of Crystal Growth, 2014, S. , ISSN 00220248, 10.1016/j.jcrysgro.2014.09.008

Stracke, G.;  Sala, E.M.;  Selve, S.;  Niermann, T.;  Schliwa, A.;  Strittmatter, A.;  Bimberg, D. 

Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots
In: Applied Physics Letters, Vol. 104, 2014, Issue 12, 10.1063/1.4870087

Buchbeitrag

Gschrey, M.;  Seifried, M.;  Krüger, L.;  Schmidt, R.;  Schulze, J.-H.;  Heindel, T.;  Burger, S.;  Rodt, S.;  Schmidt, F.;  Strittmatter, A.;  Reitzenstein, S. 

Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies
In: Optics InfoBase Conference Papers, 2014

Gschrey, M.;  Seifried, M.;  Krüger, L.;  Schmidt, R.;  Schulze, J.-H.;  Heinde, T.;  Burger, S.;  Rodt, S.;  Schmidt, F.;  Strittmatter, A.;  Reitzenstein, S. 

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
In: Optics InfoBase Conference Papers, 2014

Gschrey, M.;  Seifried, M.;  Krüger, L.;  Schmidt, R.;  Schulze, J.-H.;  Heindel, T.;  Burger, S.;  Rodt, S.;  Schmidt, F.;  Strittmatter, A.;  Reitzenstein, S. 

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
In: Conference on Lasers and Electro-Optics Europe - Technical Digest, Vol. 2014-January, 2014

Gschrey, M.;  Gericke, F.;  Schmidt, R.;  Schlottmann, E.;  Schüssler, A.;  Schulze, J.-H.;  Heindel, T.;  Rodt, S.;  Strittmatter, A.;  Reitzenstein, S. 

Fabrication of deterministic quantum light sources using cathodoluminescence lithography
In: Optics InfoBase Conference Papers, 2014

Stubenrauch, M.;  Stracke, G.;  ArsenijeviĿ, D.;  Strittmatter, A.;  Bimberg, D. 

Index-coupled quantum-dot distributed-feedback lasers
In: 2014 IEEE Photonics Conference, IPC 2014, 2014, S. 240-241, 10.1109/IPCon.2014.6995337

Thoma, A.;  Schnauber, P.;  Gschrey, M.;  Schmidt, R.;  Wohlfeil, B.;  Seifried, M.;  Schulze, J.-H.;  Burger, S.;  Schmidt, F.;  Strittmatter, A.;  Rodt, S.;  Heindel, T.;  Reitzenstein, S. 

Indistinguishable photons from deterministic quantum dot microlenses
In: Optics InfoBase Conference Papers, Vol. Part F3-EQEC 2015, 2014

2013

Begutachteter Zeitschriftenartikel

Switaiski, T.;  Woggon, U.;  Alden Angeles, D.E.;  Hoffmann, A.;  Schulze, J.-H.;  Germann, T.D.;  Strittmatter, A.;  Pohl, U.W. 

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, 2013, Issue 3, 10.1103/PhysRevB.88.035314

Gschrey, M.;  Gericke, F.;  Schüßler, A.;  Schmidt, R.;  Schulze, J.-H.;  Heindel, T.;  Rodt, S.;  Strittmatter, A.;  Reitzenstein, S. 

In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
In: Applied Physics Letters, Vol. 102, 2013, Issue 25, 10.1063/1.4812343

Prohl, C.;  Lenz, A.;  Roy, D.;  Schuppang, J.;  Stracke, G.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Eisele, H.;  Dähne, M. 

Spatial structure of In<inf>0.25</inf>Ga<inf>0.75</inf>As/GaAs/GaP quantum dots on the atomic scale
In: Applied Physics Letters, Vol. 102, 2013, Issue 12, 10.1063/1.4798520

Buchbeitrag

Pohl, U.W.;  Strittmatter, A.;  Schulze, J.-H.;  Quandt, D.;  Germann, T.D.;  Unrau, W.;  Heindel, T.;  Hitzemann, O.;  Bimberg, D.;  Reitzenstein, S. 

Self-aligned quantum-dot growth for single-photon sources
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013, 10.1109/ICIPRM.2013.6562566

2012

Begutachteter Zeitschriftenartikel

Niermann, T.;  Kieling, F.;  Lehmann, M.;  Schulze, J.-H.;  Germann, T.D.;  Pötschke, K.;  Strittmatter, A.;  Pohl, U.W. 

Atomic structure of closely stacked InAs submonolayer depositions in GaAs
In: Journal of Applied Physics, Vol. 112, 2012, Issue 8, 10.1063/1.4758301

Unrau, W.;  Quandt, D.;  Schulze, J.-H.;  Heindel, T.;  Germann, T.D.;  Hitzemann, O.;  Strittmatter, A.;  Reitzenstein, S.;  Pohl, U.W.;  Bimberg, D. 

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
In: Applied Physics Letters, Vol. 101, 2012, Issue 21, 10.1063/1.4767525

Germann, T.D.;  Hofmann, W.;  Nadtochiy, A.M.;  Schulze, J.-H.;  Mutig, A.;  Strittmatter, A.;  Bimberg, D. 

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers
In: Optics Express, Vol. 20, 2012, Issue 5, S. 5099-5107, 10.1364/OE.20.005099

Stracke, G.;  Glacki, A.;  Nowozin, T.;  Bonato, L.;  Rodt, S.;  Prohl, C.;  Lenz, A.;  Eisele, H.;  Schliwa, A.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D. 

Growth of In<inf>0.25</inf>Ga<inf>0.75</inf> As quantum dots on GaP utilizing a GaAs interlayer
In: Applied Physics Letters, Vol. 101, 2012, Issue 22, 10.1063/1.4768294

Posilovic, K.;  Kalosha, V.P.;  Winterfeldt, M.;  Schulze, J.-H.;  Quandt, D.;  Germann, T.D.;  Strittmatter, A.;  Bimberg, D.;  Pohl, J.;  Weyers, M. 

High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots
In: Electronics Letters, Vol. 48, 2012, Issue 22, S. 1419-1420, 10.1049/el.2012.3174

Strittmatter, A.;  Schliwa, A.;  Schulze, J.-H.;  Germann, T.D.;  Dreismann, A.;  Hitzemann, O.;  Stock, E.;  Ostapenko, I.A.;  Rodt, S.;  Unrau, W.;  Pohl, U.W.;  Hoffmann, A.;  Bimberg, D.;  Haisler, V. 

Lateral positioning of InGaAs quantum dots using a buried stressor
In: Applied Physics Letters, Vol. 100, 2012, Issue 9, 10.1063/1.3691251

Strittmatter, A.;  Holzbecher, A.;  Schliwa, A.;  Schulze, J.-H.;  Quandt, D.;  Germann, T.D.;  Dreismann, A.;  Hitzemann, O.;  Stock, E.;  Ostapenko, I.A.;  Rodt, S.;  Unrau, W.;  Pohl, U.W.;  Hoffmann, A.;  Bimberg, D.;  Haisler, V. 

Site-controlled quantum dot growth on buried oxide stressor layers
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, 2012, Issue 12, S. 2411-2420, 10.1002/pssa.201228407

Buchbeitrag

Strittmatter, A. 

Site-selective growth of single quantum dots
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, 2012, Issue 12, S. 2378, 10.1002/pssa.201221943

2011

Begutachteter Zeitschriftenartikel

Lenz, A.;  Eisele, H.;  Becker, J.;  Schulze, J.-H.;  Germann, T.D.;  Luckert, F.;  Pötschke, K.;  Lenz, E.;  Ivanova, L.;  Strittmatter, A.;  Bimberg, D.;  Pohl, U.W.;  Dähne, M. 

Atomic structure and optical properties of InAs submonolayer depositions in GaAs
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, 2011, Issue 4, 10.1116/1.3602470

Strittmatter, A.;  Teepe, M.;  Knollenberg, C.;  Johnson, N.M. 

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers
In: Journal of Crystal Growth, Vol. 314, 2011, Issue 1, S. 1-4, 10.1016/j.jcrysgro.2010.09.064

Wunderer, T.;  Northrup, J.E.;  Yang, Z.;  Teepe, M.;  Strittmatter, A.;  Johnson, N.M.;  Rotella, P.;  Wraback, M. 

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
In: Applied Physics Letters, Vol. 99, 2011, Issue 20, 10.1063/1.3663575

Strittmatter, A.;  Northrup, J.E.;  Johnson, N.M.;  Kisin, M.V.;  Spiberg, P.;  El-Ghoroury, H.;  Usikov, A.;  Syrkin, A. 

Semi-polar nitride surfaces and heterostructures
In: Physica Status Solidi (B) Basic Research, Vol. 248, 2011, Issue 3, S. 561-573, 10.1002/pssb.201046422

Buchbeitrag

Chua, C.;  Yang, Z.;  Knollenberg, C.;  Teepe, M.;  Cheng, B.;  Strittmatter, A.;  Bour, D.;  Johnson, N.M. 

InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7939, 2011, 10.1117/12.875188

2010

Begutachteter Zeitschriftenartikel

Lenz, A.;  Eisele, H.;  Becker, J.;  Ivanova, L.;  Lenz, E.;  Luckert, F.;  Pötschke, K.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Dähne, M. 

Atomic Structure of buried InAs sub-monolayer depositions in GaAs
In: Applied Physics Express, Vol. 3, 2010, Issue 10, 10.1143/APEX.3.105602

Ostapenko, I.A.;  Hönig, G.;  Kindel, C.;  Rodt, S.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Large internal dipole moment in InGaN/GaN quantum dots
In: Applied Physics Letters, Vol. 97, 2010, Issue 6, 10.1063/1.3477952

Germann, T.D.;  Strittmatter, A.;  Mutig, A.;  Nadtochiy, A.M.;  Lott, J.A.;  Blokhin, S.A.;  Karachinsky, L.Y.;  Shchukin, V.A.;  Ledentsov, N.N.;  Pohl, U.W.;  Bimberg, D. 

Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, 2010, Issue 10, S. 2552-2554, 10.1002/pssc.200983889

Cheng, B.;  Chua, C.L.;  Yang, Z.;  Teepe, M.;  Knollenberg, C.;  Strittmatter, A.;  Johnson, N. 

Nitride laser diodes with nonepitaxial cladding layers
In: IEEE Photonics Technology Letters, Vol. 22, 2010, Issue 5, S. 329-331, 10.1109/LPT.2009.2039564

Kirste, R.;  Wagner, M.R.;  Schulze, J.H.;  Strittmatter, A.;  Collazo, R.;  Sitar, Z.;  Alevli, M.;  Dietz, N.;  Hoffmann, A. 

Optical properties of InN grown on templates with controlled surface polarities
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, 2010, Issue 10, S. 2351-2354, 10.1002/pssa.201026086

Usikov, A.;  Soukhoveev, V.;  Shapovalov, L.;  Syrkin, A.;  Ivantsov, V.;  Scanlan, B.;  Nikiforov, A.;  Strittmatter, A.;  Johnson, N.;  Zheng, J.-G.;  Spiberg, P.;  El-Ghoroury, H. 

Structural characterization of thick (112̿2) GaN layers grown by HVPE on m-plane sapphire
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, 2010, Issue 6, S. 1295-1298, 10.1002/pssa.200983655

Buchbeitrag

Strittmatter, A.;  Teepe, M.;  Knollenberg, C.;  Yang, Z.;  Chua, C.;  Johnson, N.M.;  Spiberg, P.;  Ivantsov, V.;  Syrkin, A.;  Shapovalov, L.;  Usikov, A. 

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7616, 2010, 10.1117/12.842177

Strittmatter, A.;  Teepe, M.;  Yang, Z.;  Chua, C.;  Northrup, J.;  Johnson, N.M.;  Spiberg, P.;  Brown, R.G.W.;  Ivantsov, V.;  Syrkin, A.;  Shapovalov, L.;  Usikov, A. 

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, 2010, Issue 7-8, S. 1814-1816, 10.1002/pssc.200983557

2009

Buchbeitrag

Ledentsov, N.N.;  Lott, J.A.;  Shchukin, V.A.;  Quast, H.;  Hopfer, F.;  Fiol, G.;  Mutig, A.;  Moser, P.;  Germann, T.;  Strittmatter, A.;  Karachinsky, L.Y.;  Blokhin, S.A.;  Novikov, I.I.;  Nadtochi, A.M.;  Zakharov, N.D.;  Werner, P.;  Bimberg, D. 

Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7224, 2009, 10.1117/12.810192

2008

Begutachteter Zeitschriftenartikel

Strittmatter, A.;  Germann, T.D.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
In: Electronics Letters, Vol. 44, 2008, Issue 4, S. 290-291, 10.1049/el:20083131

Germann, T.D.;  Strittmatter, A.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots
In: Applied Physics Letters, Vol. 92, 2008, Issue 10, 10.1063/1.2898165

Winkelnkemper, M.;  Seguin, R.;  Rodt, S.;  Schliwa, A.;  Reißmann, L.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, 2008, Issue 6, S. 2217-2219, 10.1016/j.physe.2007.11.033

Germann, T.D.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

Quantum-dot semiconductor disk lasers
In: Journal of Crystal Growth, Vol. 310, 2008, Issue 23, S. 5182-5186, 10.1016/j.jcrysgro.2008.07.004

Strittmatter, A.;  Germann, T.D.;  Kettler, Th.;  Posilovic, K.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D. 

Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
In: Journal of Crystal Growth, Vol. 310, 2008, Issue 23, S. 5066-5068, 10.1016/j.jcrysgro.2008.07.069

Germann, T.D.;  Strittmatter, A.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

Temperature-stable operation of a quantum dot semiconductor disk laser
In: Applied Physics Letters, Vol. 93, 2008, Issue 5, 10.1063/1.2968137

Buchbeitrag

Schlosser, P.;  Calvez, S.;  Hastie, J.E.;  Jin, S.;  Germann, T.D.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Dawson, M.D. 

Characterisation of an InAs quantum dot semiconductor disk laser
In: 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS, 2008, 10.1109/CLEO.2008.4551842

Schlosser, P.;  Calvez, S.;  Hastie, J.E.;  Jin, S.;  Germann, T.D.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Dawson, M.D. 

Characterisation of an InAs quantum dot semiconductor disk laser
In: Optics InfoBase Conference Papers, 2008

Hopfer, F.;  Mutig, A.;  Strittmatter, A.;  Fiol, G.;  Moser, P.;  Bimberg, D.;  Shchukin, V.A.;  Ledentsov, N.N.;  Lott, J.A.;  Quast, H.;  Kuntz, M.;  Mikhrin, S.S.;  Krestnikov, I.L.;  Livshits, D.A.;  Kovsh, A.R.;  Bornholdt, C. 

High-speed directly and indirectly modulated VCSELs
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008, 10.1109/ICIPRM.2008.4703064

Winkelnkemper, M.;  Dworzak, M.;  Battel, T.P.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
In: Physica Status Solidi (B) Basic Research, Vol. 245, 2008, Issue 12, S. 2766-2770, 10.1002/pssb.200844129

Werner, S.;  Zimmer, P.;  Strittmatter, A.;  Hoffmann, A. 

Phonon interaction in InGaAs/GaAs quantum dots
In: Materials Research Society Symposium Proceedings, Vol. 1053, 2008, S. 12-16

Germann, T.D.;  Strittmatter, A.;  Pohl, J.;  Pohl, U.W.;  Bimberg, D.;  Rautiainen, J.;  Guina, M.;  Okhotnikov, O.G. 

Quantum-dot semiconductor disk-lasers
In: 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications, 2008, S. 197-198, 10.1109/INOW.2008.4634508

Shchukin, V.A.;  Ledentsov, N.N.;  Lott, J.A.;  Quast, H.;  Hopfer, F.;  Karachinsky, L.Ya.;  Kuntz, M.;  Moser, P.;  Mutig, A.;  Strittmatter, A.;  Kalosha, V.P.;  Bimberg, D. 

Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6889, 2008, 10.1117/12.784371

2007

Begutachteter Zeitschriftenartikel

Germann, T.D.;  Strittmatter, A.;  Kettler, Th.;  Posilovic, K.;  Pohl, U.W.;  Bimberg, D. 

MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
In: Journal of Crystal Growth, Vol. 298, 2007, Issue SPEC. ISS, S. 591-594, 10.1016/j.jcrysgro.2006.10.081

Winkelnkemper, M.;  Seguin, R.;  Rodt, S.;  Schliwa, A.;  Reißmann, L.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D. 

Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots
In: Journal of Applied Physics, Vol. 101, 2007, Issue 11, 10.1063/1.2743893

Gaubas, E.;  Vaitkus, J.;  Kazlauskas, K.;  Žukauskas, A.;  Grant, J.;  Bates, R.;  O'shea, V.;  Strittmatter, A.;  Bimberg, D.;  Gibart, P. 

Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 583, 2007, Issue 1, S. 181-184, 10.1016/j.nima.2007.08.195

2006

Begutachteter Zeitschriftenartikel

Strittmatter, A.;  Germann, T.D.;  Kettler, T.;  Posilovic, K.;  Pohl, U.W.;  Bimberg, D. 

Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm
In: Applied Physics Letters, Vol. 88, 2006, Issue 26, 10.1063/1.2218059

Seguin, R.;  Schliwa, A.;  Germann, T.D.;  Rodt, S.;  Pötschke, K.;  Strittmatter, A.;  Pohl, U.W.;  Bimberg, D.;  Winkelnkemper, M.;  Hammerschmidt, T.;  Kratzer, P. 

Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
In: Applied Physics Letters, Vol. 89, 2006, Issue 26, 10.1063/1.2424446

Hardtdegen, H.;  Kaluza, N.;  Sofer, Z.;  Cho, Y.S.;  Steins, R.;  Bay, H.L.;  Dikme, Y.;  Kalisch, H.;  Jansen, R.H.;  Heuken, M.;  Strittmatter, A.;  Reißmann, L.;  Bimberg, D.;  Zettler, J.-T. 

New method for the in situ determination of Al <inf>x</inf>Ga <inf>1-x</inf>N composition in MOVPE by real-time optical reflectance
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, 2006, Issue 7, S. 1645-1649, 10.1002/pssa.200565313

2005

Begutachteter Zeitschriftenartikel

Li, T.;  Hahn, E.;  Gerthsen, D.;  Rosenauer, A.;  Strittmatter, A.;  Reißmann, L.;  Bimberg, D. 

Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope
In: Applied Physics Letters, Vol. 86, 2005, Issue 24, S. 1-3, 10.1063/1.1948517

Buchbeitrag

Seguin, R.;  Rodt, S.;  Winkelnkemper, M.;  Schliwa, A.;  Strittmatter, A.;  Reißmann, L.;  Bimberg, D.;  Hahn, E.;  Gerthsen, D. 

Many-particle states in single InGaN/GaN quantum dots grown on Si-substrates
In: AIP Conference Proceedings, Vol. 772, 2005, S. 767-768, 10.1063/1.1994332

Dworzak, M.;  Bartel, T.;  Strassburg, M.;  Hoffmann, A.;  Strittmatter, A.;  Bimberg, D. 

Redistribution of excitons localized in InGaN quantum dot structures
In: AIP Conference Proceedings, Vol. 772, 2005, S. 701-702, 10.1063/1.1994299

2004

Begutachteter Zeitschriftenartikel

Seguin, R.;  Rodt, S.;  Strittmatter, A.;  Reißmann, L.;  Bartel, T.;  Hoffmann, A.;  Bimberg, D.;  Hahn, E.;  Gerthsen, D. 

Multi-excitonic complexes in single InGaN quantum dots
In: Applied Physics Letters, Vol. 84, 2004, Issue 20, S. 4023-4025, 10.1063/1.1751214

Dworzak, M.;  Bartel, T.;  Straßburg, M.;  Krestnikov, I.L.;  Hoffmann, A.;  Seguin, R.;  Rodt, S.;  Strittmatter, A.;  Bimberg, D. 

Optical properties of InGaN quantum dots
In: Superlattices and Microstructures, Vol. 36, 2004, Issue 4-6, S. 763-772, 10.1016/j.spmi.2004.09.045

Bartel, T.;  Dworzak, M.;  Strassburg, M.;  Hoffmann, A.;  Strittmatter, A.;  Bimberg, D. 

Recombination dynamics of localized excitons in InGaN quantum dots
In: Applied Physics Letters, Vol. 85, 2004, Issue 11, S. 1946-1948, 10.1063/1.1790599

Buchbeitrag

Strittmatter, A.;  Reißmann, L.;  Seguin, R.;  Rodt, S.;  Brostowski, A.;  Pohl, U.W.;  Bimberg, D.;  Hahn, E.;  Gerthsen, D. 

Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
In: Journal of Crystal Growth, Vol. 272, 2004, Issue 1-4 SPEC. ISS., S. 415-419, 10.1016/j.jcrysgro.2004.08.104

Strittmatter, A.;  Reißmann, L.;  Trepk, T.;  Pohl, U.W.;  Bimberg, D.;  Zettler, J.-T. 

Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
In: Journal of Crystal Growth, Vol. 272, 2004, Issue 1-4 SPEC. ISS., S. 76-80, 10.1016/j.jcrysgro.2004.08.134

2003

Originalartikel in begutachteter internationaler Zeitschrift

Krestnikov, Igor L. (ext.);  Strassburg, Martin (ext.);  Strittmatter, Andre (ext.);  Ledentsov, Nicolai N. (ext.);  Christen, Jürgen;  Hoffmann, Axel (ext.);  Bimberg, Dieter (ext.) 

Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 42(2003), Nr. 9 A/B, S. L1057 - L1060

Dadgar, Armin;  Strittmatter, A. (ext.);  Blaesing, Juergen;  Poschenrieder, Margarethe;  Contreras, O. (ext.);  Veit, Peter;  Riemann, Till;  Bertram, Frank;  Reiher, Antje;  Krtschil, Andre;  Diez, Annette;  Hempel, Thomas;  Finger, T.;  Christen, Jürgen;  Krost, Alois;   

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1583 - 1606

2002

Originalartikel in begutachteter internationaler Zeitschrift

Strittmatter, A. (ext.);  Reissmann, L. (ext.);  Bimberg, D. (ext.);  Veit, Peter;  Krost, Alois 

Spontaneous superlattice formation in AlGaN layers grown by MOCVD on Si(111)-substrates.
In: Physica status solidi, B = basic research [Berlin] 234(2002), Nr. 3, S. 722 - 725

2001

Begutachteter Zeitschriftenartikel

Strittmatter, A.;  Rodt, S.;  Reißmann, L.;  Bimberg, D.;  Schröder, H.;  Obermeier, E.;  Riemann, T.;  Christen, J.;  Krost, A. 

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
In: Applied Physics Letters, Vol. 78, 2001, Issue 6, S. 727-729, 10.1063/1.1347013

Originalartikel in begutachteter internationaler Zeitschrift

Strittmatter, A. (ext.);  Riemann, Till;  Christen, Jürgen;  Krost, Alois;   

Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, 727 - 729

2000

Begutachteter Zeitschriftenartikel

Tsatsul'nikov, A.F.;  Krestnikov, I.L.;  Lundin, W.V.;  Sakharov, A.V.;  Kartashova, A.P.;  Usikov, A.S.;  Alferov, Zh.I.;  Ledentsov, N.N.;  Strittmatter, A.;  Hoffmann, A.;  Bimberg, D.;  Soshnikov, I.P.;  Litvinov, D.;  Rosenauer, A.;  Gerthsen, D.;  Plaut, A. 

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
In: Semiconductor Science and Technology, Vol. 15, 2000, Issue 7, S. 766-769, 10.1088/0268-1242/15/7/318

Buchbeitrag

Dadgar, Armin;  Christen, Jürgen;  Richter, Steffen;  Bertram, Frank;  Diez, Annette;  Krost, Alois;  Strittmatter, A. (ext.) 

InGaN/GaN blue light emitter grown on Si(111) using an AlAs seed layer.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 845 - 848 (IPAP conference series 1)

Originalartikel in begutachteter internationaler Zeitschrift

Strittmatter, A. (ext.);  Bimberg, Dieter (ext.);  Krost, Alois;  Blaesing, Juergen;  Veit, Peter 

Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer.
In: Journal of crystal growth [Amsterdam] 221(2000), S. 293 - 296

1999

Begutachteter Zeitschriftenartikel

Kollakowski, St.;  Strittmatter, A.;  Dröge, E.;  Böttcher, E.H.;  Bimberg, D.;  Reimann, O.;  Janiak, K. 

65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime
In: Applied Physics Letters, Vol. 74, 1999, Issue 4, S. 612-614

Strittmatter, A.;  Krost, A.;  Bläsing, J.;  Bimberg, D. 

High quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates
In: Physica Status Solidi (A) Applied Research, Vol. 176, 1999, Issue 1, S. 611-614, 10.1002/(SICI)1521-396X(199911)176:1<611::AID-PSSA611>3.0.CO;2-1

Strittmatter, A.;  Krost, A.;  Tuerck, V.;  Strassburg, M.;  Bimberg, D.;  Blaesing, J.;  Hempel, T.;  Christen, J.;  Neubauer, B.;  Gerthsen, D.;  Christmann, T.;  Meyer, B.K. 

LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs and ZnO nucleation layers
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, 1999, Issue 1-3, S. 29-32, 10.1016/S0921-5107(98)00411-5

Strittmatter, A.;  Krost, A.;  Straßburg, M.;  Türck, V.;  Bimberg, D.;  Bläsing, J.;  Christen, J. 

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
In: Applied Physics Letters, Vol. 74, 1999, Issue 9, S. 1242-1244

Umbach, A.;  Engel, T.;  Bach, H.-G.;  Van Waasen, S.;  Dröge, E.;  Strittmatter, A.;  Ebert, W.;  Passenberg, W.;  Steingrüber, R.;  Schlaak, W.;  Mekonnen, G.G.;  Unterbörsch, G.;  Bimberg, D. 

Technology of InP-based 1.55-μm ultrafast OEMMIC's: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
In: IEEE Journal of Quantum Electronics, Vol. 35, 1999, Issue 7, S. 1024-1031, 10.1109/3.772171

Herausgeberschaft

Boettcher, E.H.;  Pfitzenmaier, H.;  Droege, E.;  Kollakowski, St.;  Strittmatter, A.;  Bimberg, D.;  Steingrueber, R. 

Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1999, S. 79-82

1998

Begutachteter Zeitschriftenartikel

Droge, E.;  Böttcher, E.H.;  Kollakowski, St.;  Strittmatter, A.;  Bimberg, D.;  Reimann, O.;  Steingrüber, R. 

78GHz distributed InGaAs MSM photodetector
In: Electronics Letters, Vol. 34, 1998, Issue 23, S. 2241-2243

Kollakowski, St.;  Lemm, Ch.;  Strittmatter, A.;  Böttcher, E.H.;  Bimberg, D. 

Buried InAlGaAs-InP waveguides: Etching, overgrowth, and characterization
In: IEEE Photonics Technology Letters, Vol. 10, 1998, Issue 1, S. 114-116, 10.1109/68.651128

Strittmatter, A.;  Krost, A.;  Schatke, K.;  Bimberg, D.;  Bläsing, J.;  Christen, J. 

Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AIN buffer layers
In: Materials Science Forum, Vol. 264-268, 1998, Issue PART 2, S. 1145-1148

Kollakowski, St.;  Böttcher, E.H.;  Strittmatter, A.;  Bimberg, D. 

High-speed InGaAs/InAIGaAs/InP waveguide-integrated MSM photodetectors for 1.3-1.55μm wavelength range
In: Electronics Letters, Vol. 34, 1998, Issue 6, S. 587-589

Engel, Th.;  Strittmatter, A.;  Passenberg, W.;  Umbach, A.;  Schlaak, W.;  Dröge, E.;  Seeger, A.;  Steingrüber, R.;  Mekonnen, G.G.;  Unterbörsch, G.;  Bach, H.-G.;  Böttcher, E.H.;  Bimberg, D. 

Narrow-band photoreceiver OEIC on InP operating at 38 GHz
In: IEEE Photonics Technology Letters, Vol. 10, 1998, Issue 9, S. 1298-1300, 10.1109/68.705622

Buchbeitrag

Engel, Th.;  Strittmatter, A.;  Passenberg, W.;  Droege, E.;  Umbach, A.;  Schlaak, W.;  Steingrueber, R.;  Seeger, A.;  Mekonnen, G.G.;  Unterboersch, G.;  Bach, H.G.;  Boettcher, E.H.;  Bimberg, D. 

38 GHz narrow band photoreceiver OEIC with MSM photodetector and HEMT amplifier
In: European Conference on Optical Communication, ECOC, Vol. 1, 1998, S. 63-64

Engel, Th.;  Strittmatter, A.;  Passenberg, W.;  Seeger, A.;  Steingrueber, R.;  Mekonnen, G.G.;  Unterboersch, G.;  Bimberg, D. 

Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 1, 1998, S. 75-76

Droege, E.;  Boettcher, E.H.;  Kollakowski, St.;  Strittmatter, A.;  Reimann, O.;  Steingrueber, R.;  Umbach, A.;  Bimberg, D. 

Distributed MSM photodetectors for the long-wavelength range
In: European Conference on Optical Communication, ECOC, Vol. 1, 1998, S. 57-58

Droege, E.;  Boettcher, E.H.;  Kollakowski, St.;  Strittmatter, A.;  Reimann, O.;  Steingrueber, R.;  Umbach, A.;  Bimberg, D. 

Distributed millimeter-wave InGaAs metal-semiconductor-metal photodetector
In: Proceedings of the International Topical Meeting on Microwave Photonics, MWP, Technical Digest, 1998, S. 173-176

Kollakowski, St.;  Droege, E.;  Boettcher, E.H.;  Strittmatter, A.;  Reimann, O.;  Bimberg, D. 

Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 μm
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1998, S. 266-268

1997

Begutachteter Zeitschriftenartikel

Böttcher, E.H.;  Dröge, E.;  Strittmatter, A.;  Bimberg, D. 

Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
In: Electronics Letters, Vol. 33, 1997, Issue 10, S. 912-914

Kollakowski, St.;  Böttcher, E.H.;  Lemm, Ch.;  Strittmatter, A.;  Bimberg, D.;  Kräutle, H. 

Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency
In: IEEE Photonics Technology Letters, Vol. 9, 1997, Issue 4, S. 496-498, 10.1109/68.559400

1996

Begutachteter Zeitschriftenartikel

Strittmatter, A.;  Kollakowski, S.;  Dröge, E.;  Böttcher, E.H.;  Bimberg, D. 

High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors
In: Electronics Letters, Vol. 32, 1996, Issue 13, S. 1231-1232

Buchbeitrag

Strittmatter, A.;  Kollakowski, St.;  Droege, E.;  Boettcher, E.H.;  Bimberg, D. 

High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors
In: European Conference on Optical Communication, ECOC, Vol. 1, 1996

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