Alternately Si and C doped GaN layers for enhanced buffer breakdown
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 576

Epitaxy of high quality AlN and AlGaN layers on Si(111) by reactive pulsed sputtering
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 28

GaN quantum dots in vertical resonant cavity structure
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 720

Growth of epitaxial GaN by reactive magnetron sputtering
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 609

Growth of epitaxial GaN by reactive magnetron sputtering
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

Heavily Ge-doped GaN films - properties and applications
In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 112

Laser-assisted local eptiaxy of ///-V compound semiconductors
In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022

MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 731

Metal micro-contacts deposited by focused electron and ion beam - impact on electrical properties
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

Optical properties of the AlScN ternary system
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 263

Sputtering eptiaxy of transition metal nitrides and AlScN
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 599

Structural and elastic properties of ScxAl1 xN
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

MOVPE-grown optoelectronic devices with GaN:Mg/GaN:Ge tunnel junctions
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG . - 2022

Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors
In: Journal of physics / D - Bristol: IOP Publ., Bd. 55 (2022), 11, insges. 7 S.

Desorption induced formation of low-density GaN quantum dots - nanoscale correlation of structural and optical properties
In: Journal of physics / D - Bristol: IOP Publ., Bd. 55 (2022), 14, insges. 7 S.

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 61 (2022), 1, insges. 7 S.

Laser-assisted local metalorganic vapor phase epitaxy
In: Review of scientific instruments - [S.l.]: American Institute of Physics, Bd. 93 (2022), insges. 14 S.

Sputter epitaxy of AlN and GaN on Si for device applications
In: Konferenz: 2022 Compound Semiconductor Week, CSW, Ann Arbor, MI, USA, 01-03 June 2022, 2022 Compound Semiconductor Week (CSW) - Piscataway, NJ: IEEE . - 2022

Fabrication of electrically pumped vertical cavity surface emitters employing GaN:Mg/GaN:Ge tunnel junction contacts
In: Magdeburg: Universitätsbibliothek, 2022, 1 Online-Ressource (xv, 93 Seiten, 3,74 MB), Illustrationen

Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 571 (2021), insges. 4 S.

Low-resistivity vertical current transport across AlInN/GaN interfaces
In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 60 (2021), 14, insges. 12 S.

Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer
In: IEEE transactions on electron devices/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, Bd. 68 (2021), 1, S. 24-28

GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 8.3

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27

Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.5

Experimental re-evaluation of proton penetration ranges in GaAs and InGaP
In: Journal of physics / D - Bristol: IOP Publ. . - 2020

Individually resolved luminescence from closely stacked GaN/AlN quantum wells
In: Photonics research - Washington, DC: OSA, Bd. 8.2020, 4, S. 610-615

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 m
In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116 (2020), issue 2, article 023102, 6 Seiten

Tools for the performance optimization of single-photon quantum key distribution
In: npj Quantum information - London: Nature Publ. Group, Vol. 6(2020), article number 29, 8 Seiten

Nitride microcavities and single quantum dots for classical and non-classical light emitters
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)

Stressor-induced site control of quantum dots for single-photon sources
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 53-90 - ( Springer series in solid-state sciences; 194)

Submonolayer quantum dots
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 13-51 - ( Springer series in solid-state sciences; 194)

1D photonic bandgap structures for high-power GaN/InGaN laser divices
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10

GaN:Mg/GaN:Ge tunnel junctions for better light emitters
In: ICNS13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

Growth of GaN-based Quantum dot structures
In: International Symposium Semiconductor Nanophotonics, Berlin, 2019, 2019, S. -

Growth of desorption-induced GaN quantum-dots
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK: 05./06. Dezember 2019 in Dresden - Dresden, 2019 . - 2019 ; [Workshop: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019]

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes
In: 13th International Conference on Nitride Semiconductors: July 7-12, 2019, Washington - Washington, 2019 . - 2019 ; [Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019]

Metastable negative differential capacitances in GaN-based pn-and tunnel-junctions
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.2

Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations
In: Microscopy and microanalysis: the official journal of the Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada - New York, NY: Cambridge University Press, 1995, Bd. 22.2019, S. 602-603

Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7 ; [Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTs) to heavy-ion irradiation
In: ICNS-13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

Pulsed sputter Deposition of AIN and GaN
In: ICNS-13, 13th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. 1

Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4

Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Small-area current injection in GaN-based light emitters with tunnel junctions
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5

Study of AlInN/GaN on Si high-electron-mobility Transistors (HEMTs) tolerance to heavyion irradiation
In: DRIP XVIII, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Berlin, 8-12 September 2019, 2019, S. -, Online

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8 ; [Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Broadband semiconductor light Sources operating at 1060 nm based on InAs - Sb/GaAs submonolayer quantum dots
In: IEEE journal of selected topics in quantum electronics - New York, NY: IEEE, Volume 25, issue 6 (2019), article 1900310

Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
In: Physical review - Woodbury, NY: Inst., Volume 100, issue 11 (2019), article 115310

Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film
In: Japanese journal of applied physics - Bristol: IOP Publ., Volume 58, issue 6 (2019), article 065503, insgesamt 6 Seiten

Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs
In: IEEE transactions on nuclear science: a publication of the IEEE Nuclear and Plasma Sciences Society/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, 1963, Bd. 66.2019, 12, S. 2417-2421

Quantum metrology of solid-state single-photon sources using photon-number-resolving detectors
In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges., Volume 21, issue 3 (2019), article 035007, insgesamt 8 Seiten

Static and dynamic characteristics of In(AsSb)/ GaAs submonolayer lasers
In: IEEE journal of quantum electronics - New York, NY: IEEE, Bd. 55.2019, 3, S. 1-7

Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)

Photon-number-resolving transition-edge sensors for the metrology of photonic microstructures based on semiconductor quantum dots
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, Volume 10933 (2019)

Amphoteric incorporation of carbon in GaN
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Carbon incorporation in GaN by intrinsic and extrinsic C-doping
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Characteristics of InAsSb/GaAs submonolayer lasers
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL36.4

Desorption induced formation of deep UV-emitting nanostructures
In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018 ; [Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Development of high brightness (In,Ga,Al)- N laser devices - theory and experiment
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018 ; [Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)
In: 9th Wide Band Gap Semiconductor and Components Workshop: 8-9th October 2018, ECSAT, Harwell, UK - Noordwijk: ESA-ESTEC, 2018, 2018, Devises 2

Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3

Laser-assisted local metalorganic vapor phase epitaxy
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018 ; [Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic applications
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation
In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018 ; [Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Nanoscale investigation of GaN / AlN quantum dot formation
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018 ; [Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018 ; [Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018 ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Tunnel junction design for InGaN/GaN-based light emitters
In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018 ; [Biophotonics, Biomedical Optics, and Imaging Conference, BIOS, San Francisco, USA, 27-28 January 2018]

Photon noise suppression by a built-in feedback loop
In: ResearchGATE: scientific neetwork ; the leading professional network for scientists - Cambridge, Mass.: ResearchGATE Corp., 2010 . - 2018, insges. 11 S.

A stand-alone fiber-coupled single-photon source
In: Scientific reports - [London]: Macmillan Publishers Limited, part of Springer Nature, 2011, Vol. 8.2018, Art. 1340, insgesamt 7 S.

Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 51.2018, 48, Art. 485103, insgesamt 6 S.

Analysis of InAsSb/GaAs submonolayer stacks
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 494.2018, S. 1-7

Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography
In: AIP Advances - New York, NY: American Inst. of Physics, 2011, Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.

Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses
In: Optics communications - Amsterdam, 1969, Bd. 413.2018, S. 162-166

Generation of maximally entangled states and coherent control in quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.

Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
In: Physica status solidi / A - Weinheim: Wiley-VCH, 1970, Vol. 215.2018, 9, Art. 1700638

Two charge states of the C N acceptor in GaN - evidence from photoluminescence
In: Physical review - Woodbury, NY: Inst., 2016, Vol. 98.2018, 12-15, Art. 125207

Semiconductor quantum dot to fiber coupling system for 1.3m range
In: Proceedings of SPIE/ SPIE - Bellingham, Wash.: SPIE, 1963, Vol. 10674.2018, Art. 106741R

A bright triggered twin-photon source in the solid state
In: Nature Communications - [London]: Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 10, Art. 102104, insgesamt 5 S.

Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.

Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.

Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission
In: Acta physica Polonica / A - Warsaw: Acad. Inst, Bd. 132.2017, 2, S. 386-389

Path-controlled time reordering of paired photons in a dressed three-level cascade
In: Physical review letters - College Park, Md: APS, Vol. 118.2017, 23, Artikel 233601

Properties of C-doped GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.

Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 11, Art. 111101, insgesamt 5 S.

Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source
In: ACS photonics - Washington, DC: ACS, Bd. 4.2017, 6, S. 1327-1332

Two-photon interference from remote deterministic quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 110.2017, 1, Art. 011104

Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter
In: Magdeburg, 2017, x, 149 Seiten, Illustrationen, Diagramme, 30 cm ; [Literaturverzeichnis: Seite 127-144]

Clustered quantum dots in single GaN islands formed at threading dislocations
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.

Efficient current injection into single quantum dots through oxide-confined p-n-diodes
In: IEEE Transactions on Electron Devices, Vol. 63, 2016, Issue 5, S. 2036-2042, 10.1109/TED.2016.2538561

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments
In: Physical Review Letters, Vol. 116, 2016, Issue 3, 10.1103/PhysRevLett.116.033601

Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 108.2016, 2, Art. 021104, insgesamt 6 S.

Growth and structure of In<inf>0.5</inf>Ga<inf>0.5</inf>Sb quantum dots on GaP(001)
In: Applied Physics Letters, Vol. 109, 2016, Issue 10, 10.1063/1.4962273

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 93, 2016, Issue 8, 10.1103/PhysRevB.93.085302

Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses
In: ACS Photonics, Vol. 3, 2016, Issue 12, S. 2461-2466, 10.1021/acsphotonics.6b00707

Investigation of proton damage in III-V semiconductors by optical spectroscopy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, 1931, Vol. 119.2016, 23, Art. 235702

Investigation of proton damage in III-V semiconductors by optical spectroscopy
In: Journal of Applied Physics, Vol. 119, 2016, Issue 23, 10.1063/1.4953585

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 440.2016, S. 6-12

On reduction of current leakage in GaN by carbon-doping
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 109.2016, 21, Art. 212102, insgesamt 5 S.

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 118-125

Properties of C-doped GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961 . - 2016, insges. 7 S.

Strong amplitude-phase coupling in submonolayer quantum dots
In: Applied Physics Letters, Vol. 109, 2016, Issue 20, 10.1063/1.4967833

On current injection into single quantum dots through oxide-confined pn-diodes
In: 16th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2016, 2016, S. 215-216, 10.1109/NUSOD.2016.7547002

230 s room-temperature storage time and 1.14 eV hole localization energy in In<inf>0.5</inf>Ga<inf>0.5</inf>As quantum dots on a GaAs interlayer in GaP with an AlP barrier
In: Applied Physics Letters, Vol. 106, 2015, Issue 4, 10.1063/1.4906994

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 7, Art. 073903, insgesamt 6 S.

Desorption induced GaN quantum dots on (0001) AlN by MOVPE
In: Physica Status Solidi - Rapid Research Letters, Vol. 9, 2015, Issue 9, S. 526-529, 10.1002/pssr.201510217

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 5.2015, 7, Art. 077146, insgesamt 8 S.

Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots
In: Applied Physics Letters, Vol. 107, 2015, Issue 20, 10.1063/1.4935792

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 414.2015, S. 105-109

Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography
In: Nature Communications, Vol. 6, 2015, 10.1038/ncomms8662

Operating single quantum emitters with a compact Stirling cryocooler
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.

Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, 2015, Issue 2, 10.1116/1.4914914

Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 4, Art. 041105, insgesamt 5 S.

Strain field of a buried oxide aperture
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015, Issue 7, 10.1103/PhysRevB.91.075306

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, 2015, Issue 23, 10.1103/PhysRevB.91.235418

Indistinguishable photons from deterministically fabricated quantum dot microlenses
In: Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2015, 2015, S. 371p

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots
In: Applied Physics Letters, Vol. 105, 2014, Issue 1, 10.1063/1.4887063

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of Crystal Growth, 2014, S. , ISSN 00220248, 10.1016/j.jcrysgro.2014.09.008

Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots
In: Applied Physics Letters, Vol. 104, 2014, Issue 12, 10.1063/1.4870087

Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies
In: Optics InfoBase Conference Papers, 2014

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
In: Optics InfoBase Conference Papers, 2014

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
In: Conference on Lasers and Electro-Optics Europe - Technical Digest, Vol. 2014-January, 2014

Fabrication of deterministic quantum light sources using cathodoluminescence lithography
In: Optics InfoBase Conference Papers, 2014

Index-coupled quantum-dot distributed-feedback lasers
In: 2014 IEEE Photonics Conference, IPC 2014, 2014, S. 240-241, 10.1109/IPCon.2014.6995337

Indistinguishable photons from deterministic quantum dot microlenses
In: Optics InfoBase Conference Papers, Vol. Part F3-EQEC 2015, 2014

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, 2013, Issue 3, 10.1103/PhysRevB.88.035314

In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
In: Applied Physics Letters, Vol. 102, 2013, Issue 25, 10.1063/1.4812343

Spatial structure of In<inf>0.25</inf>Ga<inf>0.75</inf>As/GaAs/GaP quantum dots on the atomic scale
In: Applied Physics Letters, Vol. 102, 2013, Issue 12, 10.1063/1.4798520

Self-aligned quantum-dot growth for single-photon sources
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013, 10.1109/ICIPRM.2013.6562566

Atomic structure of closely stacked InAs submonolayer depositions in GaAs
In: Journal of Applied Physics, Vol. 112, 2012, Issue 8, 10.1063/1.4758301

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
In: Applied Physics Letters, Vol. 101, 2012, Issue 21, 10.1063/1.4767525

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers
In: Optics Express, Vol. 20, 2012, Issue 5, S. 5099-5107, 10.1364/OE.20.005099

Growth of In<inf>0.25</inf>Ga<inf>0.75</inf> As quantum dots on GaP utilizing a GaAs interlayer
In: Applied Physics Letters, Vol. 101, 2012, Issue 22, 10.1063/1.4768294

High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots
In: Electronics Letters, Vol. 48, 2012, Issue 22, S. 1419-1420, 10.1049/el.2012.3174

Lateral positioning of InGaAs quantum dots using a buried stressor
In: Applied Physics Letters, Vol. 100, 2012, Issue 9, 10.1063/1.3691251

Site-controlled quantum dot growth on buried oxide stressor layers
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, 2012, Issue 12, S. 2411-2420, 10.1002/pssa.201228407

Site-selective growth of single quantum dots
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 209, 2012, Issue 12, S. 2378, 10.1002/pssa.201221943

Atomic structure and optical properties of InAs submonolayer depositions in GaAs
In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, 2011, Issue 4, 10.1116/1.3602470

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers
In: Journal of Crystal Growth, Vol. 314, 2011, Issue 1, S. 1-4, 10.1016/j.jcrysgro.2010.09.064

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
In: Applied Physics Letters, Vol. 99, 2011, Issue 20, 10.1063/1.3663575

Semi-polar nitride surfaces and heterostructures
In: Physica Status Solidi (B) Basic Research, Vol. 248, 2011, Issue 3, S. 561-573, 10.1002/pssb.201046422

InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7939, 2011, 10.1117/12.875188

Atomic Structure of buried InAs sub-monolayer depositions in GaAs
In: Applied Physics Express, Vol. 3, 2010, Issue 10, 10.1143/APEX.3.105602

Large internal dipole moment in InGaN/GaN quantum dots
In: Applied Physics Letters, Vol. 97, 2010, Issue 6, 10.1063/1.3477952

Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, 2010, Issue 10, S. 2552-2554, 10.1002/pssc.200983889

Nitride laser diodes with nonepitaxial cladding layers
In: IEEE Photonics Technology Letters, Vol. 22, 2010, Issue 5, S. 329-331, 10.1109/LPT.2009.2039564

Optical properties of InN grown on templates with controlled surface polarities
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, 2010, Issue 10, S. 2351-2354, 10.1002/pssa.201026086

Structural characterization of thick (112̿2) GaN layers grown by HVPE on m-plane sapphire
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, 2010, Issue 6, S. 1295-1298, 10.1002/pssa.200983655

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7616, 2010, 10.1117/12.842177

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 7, 2010, Issue 7-8, S. 1814-1816, 10.1002/pssc.200983557

Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7224, 2009, 10.1117/12.810192

1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
In: Electronics Letters, Vol. 44, 2008, Issue 4, S. 290-291, 10.1049/el:20083131

High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots
In: Applied Physics Letters, Vol. 92, 2008, Issue 10, 10.1063/1.2898165

Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, 2008, Issue 6, S. 2217-2219, 10.1016/j.physe.2007.11.033

Quantum-dot semiconductor disk lasers
In: Journal of Crystal Growth, Vol. 310, 2008, Issue 23, S. 5182-5186, 10.1016/j.jcrysgro.2008.07.004

Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
In: Journal of Crystal Growth, Vol. 310, 2008, Issue 23, S. 5066-5068, 10.1016/j.jcrysgro.2008.07.069

Temperature-stable operation of a quantum dot semiconductor disk laser
In: Applied Physics Letters, Vol. 93, 2008, Issue 5, 10.1063/1.2968137

Characterisation of an InAs quantum dot semiconductor disk laser
In: 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS, 2008, 10.1109/CLEO.2008.4551842

Characterisation of an InAs quantum dot semiconductor disk laser
In: Optics InfoBase Conference Papers, 2008

High-speed directly and indirectly modulated VCSELs
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008, 10.1109/ICIPRM.2008.4703064

Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
In: Physica Status Solidi (B) Basic Research, Vol. 245, 2008, Issue 12, S. 2766-2770, 10.1002/pssb.200844129

Phonon interaction in InGaAs/GaAs quantum dots
In: Materials Research Society Symposium Proceedings, Vol. 1053, 2008, S. 12-16

Quantum-dot semiconductor disk-lasers
In: 2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications, 2008, S. 197-198, 10.1109/INOW.2008.4634508

Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 6889, 2008, 10.1117/12.784371

MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
In: Journal of Crystal Growth, Vol. 298, 2007, Issue SPEC. ISS, S. 591-594, 10.1016/j.jcrysgro.2006.10.081

Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots
In: Journal of Applied Physics, Vol. 101, 2007, Issue 11, 10.1063/1.2743893

Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 583, 2007, Issue 1, S. 181-184, 10.1016/j.nima.2007.08.195

Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm
In: Applied Physics Letters, Vol. 88, 2006, Issue 26, 10.1063/1.2218059

Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
In: Applied Physics Letters, Vol. 89, 2006, Issue 26, 10.1063/1.2424446

New method for the in situ determination of Al <inf>x</inf>Ga <inf>1-x</inf>N composition in MOVPE by real-time optical reflectance
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 203, 2006, Issue 7, S. 1645-1649, 10.1002/pssa.200565313

Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope
In: Applied Physics Letters, Vol. 86, 2005, Issue 24, S. 1-3, 10.1063/1.1948517

Many-particle states in single InGaN/GaN quantum dots grown on Si-substrates
In: AIP Conference Proceedings, Vol. 772, 2005, S. 767-768, 10.1063/1.1994332

Redistribution of excitons localized in InGaN quantum dot structures
In: AIP Conference Proceedings, Vol. 772, 2005, S. 701-702, 10.1063/1.1994299

Multi-excitonic complexes in single InGaN quantum dots
In: Applied Physics Letters, Vol. 84, 2004, Issue 20, S. 4023-4025, 10.1063/1.1751214

Optical properties of InGaN quantum dots
In: Superlattices and Microstructures, Vol. 36, 2004, Issue 4-6, S. 763-772, 10.1016/j.spmi.2004.09.045

Recombination dynamics of localized excitons in InGaN quantum dots
In: Applied Physics Letters, Vol. 85, 2004, Issue 11, S. 1946-1948, 10.1063/1.1790599

Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
In: Journal of Crystal Growth, Vol. 272, 2004, Issue 1-4 SPEC. ISS., S. 415-419, 10.1016/j.jcrysgro.2004.08.104

Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
In: Journal of Crystal Growth, Vol. 272, 2004, Issue 1-4 SPEC. ISS., S. 76-80, 10.1016/j.jcrysgro.2004.08.134

Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 42(2003), Nr. 9 A/B, S. L1057 - L1060

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1583 - 1606

Spontaneous superlattice formation in AlGaN layers grown by MOCVD on Si(111)-substrates.
In: Physica status solidi, B = basic research [Berlin] 234(2002), Nr. 3, S. 722 - 725

Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
In: Applied Physics Letters, Vol. 78, 2001, Issue 6, S. 727-729, 10.1063/1.1347013

Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, 727 - 729

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
In: Semiconductor Science and Technology, Vol. 15, 2000, Issue 7, S. 766-769, 10.1088/0268-1242/15/7/318

65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime
In: Applied Physics Letters, Vol. 74, 1999, Issue 4, S. 612-614

High quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates
In: Physica Status Solidi (A) Applied Research, Vol. 176, 1999, Issue 1, S. 611-614, 10.1002/(SICI)1521-396X(199911)176:1<611::AID-PSSA611>3.0.CO;2-1

LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs and ZnO nucleation layers
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, 1999, Issue 1-3, S. 29-32, 10.1016/S0921-5107(98)00411-5

Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
In: Applied Physics Letters, Vol. 74, 1999, Issue 9, S. 1242-1244

Technology of InP-based 1.55-μm ultrafast OEMMIC's: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
In: IEEE Journal of Quantum Electronics, Vol. 35, 1999, Issue 7, S. 1024-1031, 10.1109/3.772171

Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1999, S. 79-82

78GHz distributed InGaAs MSM photodetector
In: Electronics Letters, Vol. 34, 1998, Issue 23, S. 2241-2243

Buried InAlGaAs-InP waveguides: Etching, overgrowth, and characterization
In: IEEE Photonics Technology Letters, Vol. 10, 1998, Issue 1, S. 114-116, 10.1109/68.651128

Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AIN buffer layers
In: Materials Science Forum, Vol. 264-268, 1998, Issue PART 2, S. 1145-1148

High-speed InGaAs/InAIGaAs/InP waveguide-integrated MSM photodetectors for 1.3-1.55μm wavelength range
In: Electronics Letters, Vol. 34, 1998, Issue 6, S. 587-589

Narrow-band photoreceiver OEIC on InP operating at 38 GHz
In: IEEE Photonics Technology Letters, Vol. 10, 1998, Issue 9, S. 1298-1300, 10.1109/68.705622

38 GHz narrow band photoreceiver OEIC with MSM photodetector and HEMT amplifier
In: European Conference on Optical Communication, ECOC, Vol. 1, 1998, S. 63-64

Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 1, 1998, S. 75-76

Distributed MSM photodetectors for the long-wavelength range
In: European Conference on Optical Communication, ECOC, Vol. 1, 1998, S. 57-58

Distributed millimeter-wave InGaAs metal-semiconductor-metal photodetector
In: Proceedings of the International Topical Meeting on Microwave Photonics, MWP, Technical Digest, 1998, S. 173-176

Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 μm
In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1998, S. 266-268

Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
In: Electronics Letters, Vol. 33, 1997, Issue 10, S. 912-914

Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency
In: IEEE Photonics Technology Letters, Vol. 9, 1997, Issue 4, S. 496-498, 10.1109/68.559400

High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors
In: Electronics Letters, Vol. 32, 1996, Issue 13, S. 1231-1232

High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors
In: European Conference on Optical Communication, ECOC, Vol. 1, 1996