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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
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Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks
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Experimental re-evaluation of proton penetration ranges in GaAs and InGaP
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Individually resolved luminescence from closely stacked GaN/AlN quantum wells
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Low-resistivity vertical current transport across AlInN/GaN interfaces
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Tools for the performance optimization of single-photon quantum key distribution
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Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer
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GaN:Mg/GaN:Ge tunnel junctions for better light emitters
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Growth of GaN-based Quantum dot structures
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Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
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Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
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Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR
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Small-area current injection in GaN-based light emitters with tunnel junctions
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Study of AlInN/GaN on Si high-electron-mobility Transistors (HEMTs) tolerance to heavyion irradiation
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Site-selective growth of single quantum dots
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Atomic structure and optical properties of InAs submonolayer depositions in GaAs
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In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
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Semi-polar nitride surfaces and heterostructures
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InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
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Atomic Structure of buried InAs sub-monolayer depositions in GaAs
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Large internal dipole moment in InGaN/GaN quantum dots
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Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation
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Nitride laser diodes with nonepitaxial cladding layers
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Optical properties of InN grown on templates with controlled surface polarities
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Structural characterization of thick (112̿2) GaN layers grown by HVPE on m-plane sapphire
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Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
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Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
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Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance
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1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
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High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots
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Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
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Quantum-dot semiconductor disk lasers
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Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
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Temperature-stable operation of a quantum dot semiconductor disk laser
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Characterisation of an InAs quantum dot semiconductor disk laser
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Characterisation of an InAs quantum dot semiconductor disk laser
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High-speed directly and indirectly modulated VCSELs
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Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
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Phonon interaction in InGaAs/GaAs quantum dots
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Quantum-dot semiconductor disk-lasers
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Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results
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MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
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Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots
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Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures
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Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm
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Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
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New method for the in situ determination of Al <inf>x</inf>Ga <inf>1-x</inf>N composition in MOVPE by real-time optical reflectance
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Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope
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Many-particle states in single InGaN/GaN quantum dots grown on Si-substrates
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Multi-excitonic complexes in single InGaN quantum dots
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Optical properties of InGaN quantum dots
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Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
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Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
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Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
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Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates
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Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
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Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition
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InGaN/GaN blue light emitter grown on Si(111) using an AlAs seed layer.
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Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer.
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65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3-1.55 μm wavelength regime
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High quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates
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LP-MOCVD growth of GaN on silicon substrates - comparison between AlAs and ZnO nucleation layers
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Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
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Technology of InP-based 1.55-μm ultrafast OEMMIC's: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
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Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation
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78GHz distributed InGaAs MSM photodetector
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Buried InAlGaAs-InP waveguides: Etching, overgrowth, and characterization
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Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AIN buffer layers
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High-speed InGaAs/InAIGaAs/InP waveguide-integrated MSM photodetectors for 1.3-1.55μm wavelength range
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Narrow-band photoreceiver OEIC on InP operating at 38 GHz
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38 GHz narrow band photoreceiver OEIC with MSM photodetector and HEMT amplifier
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Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
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Distributed MSM photodetectors for the long-wavelength range
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Distributed millimeter-wave InGaAs metal-semiconductor-metal photodetector
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Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 μm
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Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
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Waveguide-integrated InP-InGaAs-InAlGaAs MSM photodetector with very-high vertical-coupling efficiency
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High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors
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High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors
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