Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×10 20cm -3
In: Physical review materials - College Park, MD: APS, Volume 3 (2019), Issue 10, Article 104603, insgesamt 11 Seiten

Photoluminescence line shape analysis of highly ntype doped zincblende GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, 2019, article 1900522, insgesamt 5 Seiten

Anisotropic optical properties of highly doped rutile SnO 2 - valence band contributions to the Burstein-Moss shift
In: APL materials: high impact open access journal in functional materials science - Melville, NY: AIP Publ, Vol. 7.2019, 2, Art. 022508

Anisotropic phonon properties and effective electron mass in α-Ga 2O 3
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 114.2019, 4, Art. 142102, insgesamt 5 Seiten

Plasmonic properties of degenerately Ge-Doped Cubic GaN
In: WSE 10: Workshop Ellipsometry, March 19 - 21, 2018, Chemnitz, Germany : abstract-book - Chemnitz, S. 36 ; [Workshop Ellipsometry, WSE 10, Chemnitz, 19-21 March 2018]

Revision of the TO phonon frequencies in wurtzite and zincblende GaN
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Ellipsometry of transparent conducting oxides from mid-infrared into vacuum-ultraviolet
In: WSE 10: Workshop Ellipsometry, March 19 - 21, 2018, Chemnitz, Germany : abstract-book - Chemnitz, S. 40 ; [Workshop Ellipsometry, WSE 10, Chemnitz, 19-21 March 2018]

Characterization of the dielectric function of RScO3 type scandates
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, Art. DS 3.10

Structural, optical and electronic properties of single-crystalline (In1-xGax)2O3 thin films in the low-x bixbyite phase end
In: 7th International Symposium Transparent Conductive Materials, E-MRS & MRS-J Bilateral Symposium Advanced Oxides and Wide Bandgap Semiconductors: 14-19 October 2018, Crete, Greece ; Abstract book - TCM, 2018, TCM-O45.ID-10, S. 171

Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20eV
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, Art. HL27.10

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 123.2018, 19, Art. 195301, insgesamt 19 S.

Ordinary dielectric function of corundumlike α Ga 2O 3 from 40 meV to 20 eV
In: Physical review materials - College Park, MD: APS, Vol. 2.2018, 4, Art. 044601

Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
In: Applied physics express: APEX - Tokyo: Ōyō Butsuri-Gakkai, Vol. 11.2018, 10, Art. 101001

Anisotropic optical properties of metastable (0112)α Ga2O3 grown by plasma-assisted molecular beam epitaxy
In: Physical review applied - College Park, Md. [u.a.]: American Physical Society, Vol. 10.2018, 2, Art. 024047

Optical properties of In 2O 3 from experiment and first-principles theory - influence of lattice screening
In: New journal of physics: the open-access journal for physics - [Bad Honnef]: Dt. Physikalische Ges, Vol. 20.2018, Art. 053016, insgesamt 13 S.

Band gap of corundumlike α-Ga 2O 3 determined by absorption and ellipsometry determined by absorption and ellipsometry
In: Physical review materials - College Park, MD: APS, Vol. 1.2017, 2, Art. 024604

Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3 - theory and experiment
In: Physical review - Woodbury, NY: Inst, Bd. 94.2016, 7

Erratum: Many-electron effects on the dielectric function of cubic In 2O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
In: Physical review. - Woodbury, NY : Inst; Vol. 93.2016, 23, Art. 239905

Many-electron effects on the dielectric function of cubic In 2 O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
In: Physical review. - Woodbury, NY : Inst, Bd. 93.2016, 4

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 120.2016, 1, Art. 015703

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 109.2016, 22, Art. 221106

Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 108.2016, 22, Art. 221105, insgesamt 6 S.

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
In: Semiconductor science and technology: devoted exclusively to semiconductor research and applications - Bristol: IOP Publ, Vol. 30.2015, 8, Art. 085014, insgesamt 6 S.

Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, 18, Art. 182102, insgesamt 5 S.

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 1180-1188

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 14, Art. 142101, insgesamt 6 S.

Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods
In: New journal of physics: the open-access journal for physics - [Bad Honnef]: Dt. Physikalische Ges, Vol. 17.2015, 8, Art. 083047, insgesamt 9 S.

Structural and optical properties of MBE-grown asymmetric cubic GaN/Al x Ga 1- x N double quantum wells
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 873-878

Optical properties and band structure of highly doped gallium nitride
In: Proceedings of SPIE - Bellingham, Wash: SPIE, Vol. 9363.2015, Art. 93630G

Untersuchungen des Kornwachstums nanokristalliner Materialien durch Computersimulationen und analytische Theorien
In: Magdeburg Univ., Fak. für Naturwiss., Habil.-Schr., 2015, 70 S., graph. Darst., 30 cm

Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, Bd. 211.2014, 1, S. 82-86

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 90.2014, 7, Art. 075203, insgesamt 10 S.

Optical properties of magnesium doped Al x Ga1 x N (0.61 ≤ x ≤ 0.73)
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 114.2014, Art. 143103, insgesamt 8 S.

Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 104.2014, Art. 231106, insgesamt 5 S.

Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
In: Thin solid films: international journal on the science and technology of condensed matter films - Amsterdam [u.a.]: Elsevier, Vol. 571.2014, part 3, S. 502-595

Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 104.2014, 5, Art. 051906

Impact of AlN Spacer on metalsemiconductormetal PtInAlGaN/GaN heterostructures for ultraviolet detection
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08jk04, insgesamt 4 S.

Anisotropic absorption and emission of bulk (1-100) AlN
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 87.2012, 23, Art. 235209, insgesamt 9 S., 2013

Anisotropy of effective electron masses in highly doped nonpolar GaN
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 23, Art. 232104, insgesamt 5 S.

Negative spin-exchange splitting in the exciton fine structure of AlN
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 102.2013, 5, Art. 052112, insgesamt 4 S.

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
In: Journal of applied physics. - Melville, NY : American Inst. of Physics, Bd. 113.2013, 3, S. 033501, insges. 11 S.

Transition energies and direct-indirect band gap crossing in zinc-blende Al_{x}Ga_{1 x}N
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 87.2013, 19, Art. 195210, insgesamt 21 S.

Multivalence-band calculation of the excitonic dielectric function for hexagonal GaN
In: Journal of physics. - Bristol : IOP PublJournal of physics / Condensed matter, Bd. 25.2013, 17

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 12, Art. 122105, insgesamt 5 S.

Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 21, Art. 212108, insgesamt 5 S.

Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08jk02, insgesamt 4 S.

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10 20 cm -3
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art. 012103, insgesamt 4 S.

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 5, S. 1253-1258

Optical properties of cubic GaN from 1 to 20 eV
In: Physical review. - Ridge, NY : APSPhysical review / B, Bd. 85.2012, 15, insges. 7 S.

Growth studies on quaternary AlInGaN layers for HEMT application
In: Journal of electronic materials. - Warrendale, Pa : TMS, Bd. 41.2012, 5, S. 905-909

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.

Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, Bd. 209.2012, 1, S. 29-32

Dielectric function and bowing parameters of InGaN alloys
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, Bd. 249.2012, 3, S. 485-488

Sharp bound and free exciton lines from homoepitaxial AlN
In: Physica status solidi / A: pss - Berlin: Wiley-VCH, Bd. 208.2011, 7, S. 1520-1522

Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al 0.94Ga 0.06N
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021903, insgesamt 3 S.

Investigation of the excitonic luminescence band of CdTe solar cells by photoluminescence and photoluminescence excitation spectroscopy
In: Thin solid films: international journal on the science and technology of condensed matter films - Amsterdam [u.a.] Elsevier, Bd. 519.2011, 21, S. 7173-7175

Phosphorus implanted cadmium telluride solar cells
In: Thin solid films: international journal on the science and technology of condensed matter films - Amsterdam [u.a.] Elsevier, Bd. 519.2011, 21, S. 7153-7155

Growth and characterization of InGaN by RF-MBE
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 323.2011, 1, S. 72-75

Band structure and optical properties of hexagonal In-rich In xAl 1-xN alloys
In: Journal of physics / Condensed matter: a journal recognized by the European Physical Society - Bristol: IOP Publ. Ltd., 23.2011, 47, Art. 475801

Electrical properties of Al xGa 1- xN/GaN heterostructures with low Al content
In: Journal of applied physics - Melville, NY: AIP, Bd. 109.2011, 5, S. 053705, insges. 5 S.

Optical properties of MgZnO alloys - excitons and exciton-phonon complexes
In: Journal of applied physics - Melville, NY: AIP, 110.2011, 1, Art. 013520, insgesamt 8 S.

Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
In: Physical review / B - Ridge, NY: APS, 84.2011, 7, Art. 075218, insgesamt 13 S.

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.

Dielectric function and optical properties of quaternary AlInGaN alloys
In: Journal of applied physics - Melville, NY: AIP, 110.2011, 1, Art. 013102, insgesamt 9 S.

Dielectric function of Al-rich AlInN in the range 1 - 18 eV
In: Physica status solidi / A: pss - Berlin: Wiley-VCH, Bd. 208.2011, 7, S. 1517-1519

Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
In: Physica status solidi / A - Weinheim: Wiley-VCH, insges. 4 S., 2011

Structural characterization of sputtered indium oxide films deposited at room temperature
In: Thin solid films . - Amsterdam [u.a.] Elsevier, Bd. 518.2010, 16, S. 4508-4511

Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers
In: Journal of applied physics . - Melville, NY : AIP, Bd. 108.2010, 12, S. 124503, insges. 8 S.

Influence of the surface potential on electrical properties of Al x Ga1-x N/GaN heterostructures with different Al-content - effect of growth method
In: Journal of applied physics . - Melville, NY : AIP, Bd. 107.2010, 5, insges. 5 S.

Valence-band splitting and optical anisotropy of AlN
In: Physica status solidi . - Weinheim : Wiley-VCH, insges. 4 S.

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
In: Journal of physics . - Bristol : IOP Publ., Bd. 43.2010, 36, S. 365102, insges. 10 S.

Optical properties of InN grown on Si(111) substrate
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 207.2010, 5, S. 1066-1069

Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 207.2010, 5, S. 1062-1065

MBE growth of cubic AlN on 3C-SiC substrate
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 207.2010, 6, S. 1365-1368

Growth of atomically smooth cubic AlN by molecular beam epitaxy
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 7.2010, 1, S. 17-20

Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 7.2010, 10, S. 2398-2403

Influence of anisotropic strain on excitonic transitions in a-plane GaN films
In: Microelectronics journal . - Oxford : Elsevier Advanced Technology, Bd. 40.2009, 2, S. 322-324

Modulation spectroscopy of AlGaN/GaN heterostructures - the influence of electron-hole interaction
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 204.2007, 2, S. 447-458

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 88.2006, 2, S. 024101, insges. 3 S.

Influence of excitons and electric fields on the dielectric function of GaN - theory and experiment
In: Physical review . - College Park, Md. : APS, Bd. 74.2006, 12, S. 125207, insges. 10 S.

Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate
In: SUPERLATTICES AND MICROSTRUCTURES, Vol. 36, Issue 4-6, S. 693--700, 2004, 10.1016/j.spmi.2004.09.025

Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate.
In: Superlattices and microstructures [London] 36(2004), S. 693 - 700