Polarization fields in semipolar (2021) and (2021) InGaN light emitting diodes
In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116(2020), Issue 6, Article 062106

All-optical determination of free-carrier concentration and composition in cubic GaN and AlGaN
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Effective electron mass anisotropy in [alpha]-Ga 2O 3
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IR-Vis-UV optical properties of [alpha]-Ga 2O 3 films grown by halide vapor phase epitaxy
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Orbital contributions to the electron g-factor in semiconductor nanowires
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Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×10 20cm -3
In: Physical review materials - College Park, MD: APS, Volume 3 (2019), Issue 10, Article 104603, insgesamt 11 Seiten

Photoluminescence line shape analysis of highly ntype doped zincblende GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, 2019, article 1900522, insgesamt 5 Seiten

Anisotropic optical properties of highly doped rutile SnO 2 - valence band contributions to the Burstein-Moss shift
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Anisotropic phonon properties and effective electron mass in α-Ga 2O 3
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Catenated and spirocyclic polychalcogenides from potassium carbonate and elemental chalcogens
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Plasmonic properties of degenerately Ge-Doped Cubic GaN
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Revision of the TO phonon frequencies in wurtzite and zincblende GaN
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Ellipsometry of transparent conducting oxides from mid-infrared into vacuum-ultraviolet
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Characterization of the dielectric function of RScO3 type scandates
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Structural, optical and electronic properties of single-crystalline (In1-xGax)2O3 thin films in the low-x bixbyite phase end
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Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20eV
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Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
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Ordinary dielectric function of corundumlike α Ga 2O 3 from 40 meV to 20 eV
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Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
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Anisotropic optical properties of metastable (0112)α Ga2O3 grown by plasma-assisted molecular beam epitaxy
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Optical properties of In 2O 3 from experiment and first-principles theory - influence of lattice screening
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Band gap of corundumlike α-Ga 2O 3 determined by absorption and ellipsometry determined by absorption and ellipsometry
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Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3 - theory and experiment
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Erratum: Many-electron effects on the dielectric function of cubic In 2O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
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Many-electron effects on the dielectric function of cubic In 2 O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
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Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
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Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
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Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
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Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
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Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN
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Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
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Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods
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Structural and optical properties of MBE-grown asymmetric cubic GaN/Al x Ga 1- x N double quantum wells
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Optical properties and band structure of highly doped gallium nitride
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Untersuchungen des Kornwachstums nanokristalliner Materialien durch Computersimulationen und analytische Theorien
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Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry
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Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
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Optical properties of magnesium doped Al x Ga1 x N (0.61 ≤ x ≤ 0.73)
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Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
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Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
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Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers
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Impact of AlN Spacer on metalsemiconductormetal PtInAlGaN/GaN heterostructures for ultraviolet detection
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Anisotropic absorption and emission of bulk (1-100) AlN
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Anisotropy of effective electron masses in highly doped nonpolar GaN
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Negative spin-exchange splitting in the exciton fine structure of AlN
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N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
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Transition energies and direct-indirect band gap crossing in zinc-blende Al_{x}Ga_{1 x}N
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Multivalence-band calculation of the excitonic dielectric function for hexagonal GaN
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Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
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Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
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Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
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Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10 20 cm -3
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Hochauflösende Emissions- und Absorptionsspektroskopie an Halbleitern mit großer Bandlücke
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Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
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Optical properties of cubic GaN from 1 to 20 eV
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Growth studies on quaternary AlInGaN layers for HEMT application
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Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
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Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
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Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
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Dielectric function and bowing parameters of InGaN alloys
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Sharp bound and free exciton lines from homoepitaxial AlN
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Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al 0.94Ga 0.06N
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Investigation of the excitonic luminescence band of CdTe solar cells by photoluminescence and photoluminescence excitation spectroscopy
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Phosphorus implanted cadmium telluride solar cells
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Growth and characterization of InGaN by RF-MBE
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Band structure and optical properties of hexagonal In-rich In xAl 1-xN alloys
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Electrical properties of Al xGa 1- xN/GaN heterostructures with low Al content
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Optical properties of MgZnO alloys - excitons and exciton-phonon complexes
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Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
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Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
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Dielectric function and optical properties of quaternary AlInGaN alloys
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Dielectric function of Al-rich AlInN in the range 1 - 18 eV
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Optical anisotropy of a-plane Al0.8In0.2N grown on an a-plane GaN pseudosubstrate
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Structural characterization of sputtered indium oxide films deposited at room temperature
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Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers
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Influence of the surface potential on electrical properties of Al x Ga1-x N/GaN heterostructures with different Al-content - effect of growth method
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Valence-band splitting and optical anisotropy of AlN
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Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
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Optical properties of InN grown on Si(111) substrate
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Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates
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MBE growth of cubic AlN on 3C-SiC substrate
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Growth of atomically smooth cubic AlN by molecular beam epitaxy
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Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
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Influence of anisotropic strain on excitonic transitions in a-plane GaN films
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Modulation spectroscopy of AlGaN/GaN heterostructures - the influence of electron-hole interaction
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Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
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Influence of excitons and electric fields on the dielectric function of GaN - theory and experiment
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Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate
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Temperature dependence of the built-in electric field strength of AlGaN/GaN heterostructures on Si(111) substrate.
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