Prof. Strittmatter

Prof. Dr. rer. nat. habil. André Strittmatter

Fakultät für Naturwissenschaften (FNW)
Institut für Physik (IfP)
Universitätsplatz 2, 39106 Magdeburg, G16-219
Projekte

Aktuelle Projekte

Entwicklung hochbrillianter Quantenpunkt-Laserdioden mit 1250 nm Wellenlänge für LIDAR-Lichtquellen
Laufzeit: 01.04.2021 bis 31.03.2024

Neue Halbleiter-Lasertechnologie wird für light-detction and ranging (LIDAR) Systeme benötigt, die vor allem im Automotive-Bereich Anwendung finden. LIDAR beruht auf der omnidirektionale Ausssendung von Lichtpulsen und die zeitgenaue Erfassung ihrer Rückkehr von reflektierenden Objekten. Die Geschwindigkeit der Erfassung einzelner Objekte ist grundlegend von der Lichtleistung pro Puls abhängig, In konventionellen kantenemittierenden Halbleiter-Laserdioden divergiert stark in der vertikalen Achse der Emission wodurch nicht nur die Lichtleistung sondern auch die Ortsauflösung reduziert wird. Da die Lichtübertragung im frei zugänglichen Raum erfolgt, ist die Augensicherheit ein wichtiges Kriterium für die Auswahl der Laserwellenlänge. Bisherige Systeme arbeiten bei der nicht optimalen Wellenlänge von 905 nm, weil entsprechende Lichtquellen bei 1250 nm Wellenlänge bisher nicht demonstriert worden sind. In diesem Projekt kooperieren wir mit einer chinesischen Forschergruppe um diese Lücke zu schließen. Ein neuartiges Wellenleiterkonzept mit sehr geringer Divergenz im Ausgangsstrahl wird mit der Quantenpunkt-Technologie gekoppelt, die Wellenlänge von 1250 nm auf GaAs-Substraten zu ermöglichen.

Projekt im Forschungsportal ansehen

Abgeschlossene Projekte

Röntgendiffraktometer
Laufzeit: 22.08.2017 bis 21.08.2022

Moderne Halbleiterschichtstrukturen bestehen heutzutage meist aus einer komplexen Vielfachschichtenfolge von kontrolliert abgeschiedenen Epitaxieschichten unterschiedlicher Materialzusammensetzung und Verspannung mit Schichtdicken von einigen Monolagen bis zu einigen Mikrometern. Die strukturelle Untersuchung derartiger Proben im Hinblick auf kristalline Perfektion, chemische Zusammensetzung,Verspannungszustand sowie der Schichtdicken und- rauhigkeiten ist Gegenstand von Röntgenbeugungexperimenten und ohne diese nicht möglich. Das beantragte hochauflösende Röntgendiffraktometer ermöglicht eine schnelle, zerstörungsfreie strukturelle Untersuchung sowohl von perfekt gitterangepaßten epitaktischen Halbleiterschichten und -Schichtsystemen wie auch von gitterfehlangepaßten und hoch texturierten Materialien bis hin zu kristallographischen Pulvern in Form von Dünnschichtsystemen oder kompakten Proben.

Projekt im Forschungsportal ansehen

Rasterkraftmikroskop mit elektrochemischer Zelle
Laufzeit: 19.06.2017 bis 18.06.2022

Mit dem Rasterkraft-Mikroskop sollen in-situ elektrochemische Prozesse an Halbleiterschichten untersucht werden. Bei diesen Prozessen treten charakteristische Deformationen der Oberfläche auf, die nur mit einem Rasterkraftmikroskop mit der erforderlichen Auflösung messbar sind. Für die Beobachtung dieser Prozesse ist eine passende elektrochemische Zelle notwendig, in der die entsprechenden chemischen Prozesse ablaufen können und zudem die Oberfläche der Halbleiterstrukturen mit einem Rasterkraft-Mikroskop in schneller Folge abgetastet werden kann.  Zwingend notwendig ist es zum Beispiel, die lateralen Dimensionen der durch elektrochemische Prozesse erzeugten Strukturen auf einer Nanometerskala zu kontrollieren. Diese Untersuchungen dienen weiter der Herstellung neuartiger elektrischer Halbleiterbauelemente mit skalierbarer Stromführung im Nanometerbereich. Zudem lassen sich für die Epitaxie von Nanoobjekten definierte Nukleationspunkte festlegen und somit eine deutlich verbesserteGenauigkeit in der Herstellung dieser Nanomaterialien erreichen.

Projekt im Forschungsportal ansehen

High brightness GaN based laser diodes (HiBGaN)
Laufzeit: 01.04.2018 bis 31.03.2021

Visible LEDs and laser diodes are made of group-III-nitride materials grown by epitaxy methods. They already changed our daily life by their ubiquitous use for illumination and projection. High-power, high-brightness GaN-based lasers could replace discharge light bulbs or low-efficiency laser systems also in large-area display, projection, and other lighting systems as well as in free-space or underwater communication. In order to realize GaN-based lasers with high-brightness the conventional edge emitter design which is based on total interface reflection (TIR) waveguides must be substituted by a vertical mode-expanding waveguide structure. Thereby, a wider optical near-field is achieved resulting in narrower far-field angles of the emission profile. Simultaneously, the mode-expanding waveguide must stabilize the fundamental mode emission by discriminating higher order vertical modes through gain and loss engineering. This NSFC-DFG joint project aims to develop high-power, high-brightness (In,Ga,Al)N laser diodes using the novel photonic band crystal (PBC) laser concept. The principal investigators for this project are Prof. André Strittmatter from the Semiconductor epitaxy department of the Otto-von-Guericke University Magdeburg, Germany (OvGU) and Prof. Tong Cunzhu from Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), China. Both PI´s have strong background in PBC laser diodes and complementary expertise in simulation, nitride growth and characterization, and device fabrication.
Fundamental research on optimum optical and electrical design of the PBC structure itself and the laser structure in total is necessary. The successful realization of the design crucially depends on the available material combinations in the group-III nitride system. In particular, a materials study regarding mechanical strain, electrical conductivity, and optical losses for the PBC section must be conducted. HiBGaN combines the accumulated, complementary knowledge of both sides by distributing each task to the specific strength of each group. The German side has strong epitaxial growth ability of lattice-matched nitride materials which is prerequisite for thick, low-loss GaN-based PBC designs. OvGU is therefore responsible for the epitaxial growth and characterization of the laser structure. The Chinese side is responsible for design of PBC structures, fabrication and characterization of PBC lasers. Mutual research visits are negotiated to train students, exchange expert knowledge, and initiate long-term partnership between both institutions.

Projekt im Forschungsportal ansehen

Teilprojekt A2 "Lineare Stressorstrukturen" im Sonderforschungsbereich 787: "Nanophotonik: Materialien, Modelle, Bauelemente" (Sprecherhochschule TU Berlin)
Laufzeit: 01.01.2016 bis 31.12.2019

The project aims at the advancement of the buried-stressor approach for fabricating (1) stripes of InGaAs- based carrier-localization layers for novel photonic devices and (2) single site-controlled long-wavelength QDs for fiber based quantum communication at telecom wavelengths; in addition, (3) device heterostructures will be developed and grown for other CRC projects.

  1. Active waveguide structures with a high density of Stranski-Krastanow quantum dots (SK QDs) and sub- monolayer (SML) depositions aligned in linear arrays will be developed. Target is the fabrication of efficient edge-emitting devices, LD/SOA based on SK QDs and SML depositions, and waveguide photodetectors with SK QDs, employing single and multiple layers of stressor-induced stripe formation - adapted to the optical mode. The active region of these devices hence shall be fabricated employing a self-aligned site control of either quantum dots or SML depositions.

Benefits of the buried-stressor approach for ridge-waveguide devices are:
  • The active low-Eg medium is vertically and laterally embedded in a high-Eg matrix
  • The structures are fabricated in a self-aligned bottom-up approach, without post-growth processing
  • Low absorption losses, lateral index guiding, low noise (in detector applications)

 Single site-controlled long-wavelength InGaAs QDs will be developed for single-photon sources operating at telecom wavelengths. The approach will apply the successful CRC phase-2 concept of buried stressors and additional pathways for emission red-shift like QD ripening and SRL overgrowth.
Epitaxy for energy-efficient high-bandwidth VCSELs based on SK-QDs, QWs, and SML structures pro- cessed in project C1 will also be performed. Devices will be designed for operation at 980 to 1240 nm emission wavelength required for short-range applications and silicon photonics. Furthermore, A2 will perform epitaxy of heterostructures with self-assembled InGaAs QDs emitting in the 900-980 nm spectral range for deterministic single-photon devices and integrated waveguide structures in C12.

Projekt im Forschungsportal ansehen

Publikationen

2023

Abstract

Local heteroepitaxial growth of GaAs islands on Si by laser-assisted metal organic vapor phase epitaxy

Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André

In: DGKK/DEMBE 2023 - Stuttgart : Universität, S. 31

Abstract

Selective GaAs-based p/n-diode fabricated by laser-assisted metal organic vapor phase epitaxy

Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André

In: CSW 2023 - Jeju, Korea, S. 693, Artikel P2-010

Abstract

Advanced cathodoluminescence microscopy of a cascaded InGaN/GaN LED

Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wein, Konstantin; Christen, Jürgen; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 57, Artikel M07

Abstract

Group-III/V Quantum dots - controlling their properties and position through epitaxial growth

Strittmatter, André

In: Konferenz: iNOW2023, Würzburg, 16-27 July 2023, Abstract booklet of iNOW2023 - Würzburg : Universität

Abstract

(Late news) characterization of the space-charge region of a GaN pn-junction and pin-drift-diode using EBIC and CL

Eisele, Holger; Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Christen, Jürgen; Dadgar, Armin; Berger, Christoph; Strittmatter, André; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei; Faber, Samuel; Witzigmann, Bernd

In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 116-117, Artikel W04

Abstract

Improving the insulating properties of C-doped GaN buffer layers

Dadgar, Armin; Zweipfenning, Thorsten; Ehrler, Jasmin; Borgmann, Ralf; Bläsing, Jürgen; Kalisch, Holger; Vescan, Andrei; Strittmatter, André

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel TuP-ED-23

Abstract

Local epitaxial growth of GaAs islands for monolithic integration on Si

Bruckmann, Christian; Trippel, Max; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Abstract booklet of ISTDM-ICSI 2023 - Como, insges. 1 S.

Abstract

Local epitaxial growth by laser-assisted MOVPE

Strittmatter, André; Bruckmann, Christian; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin

In: FAME – First International Workshop on Fundamentals and Advances of MOVPE processes - IPIC Research Centre . - 2023

Abstract

Optical an structural characterization of an 'AlInN/GaN-based longitudinal photonic bandgap crystal laser structure

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-4

Abstract

GaN quantum dots in resonant cavity micropillars as deep UV single photon sources

Christen, Jürgen; Schuermann, Hannes; Bertram, Frank; Schmidt, Gordon; August, Olga; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Gao, Kong; Holmes, Marc; Arakawa, Yasuhiko

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-2

Abstract

Optical Nano-Charakterization of a Cascaded InGaN/GaN LED

Bertram, Frank; Schmidt, Gordon; Veit, Peter; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH3-2

Abstract

HfN as conductive buffer for GaN epitaxy

Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Magnetron Sputter Epitaxy 2023, 19 - 20 Oktober, 2023, Dresden, S. 0, https://www.fep.fraunhofer.de/de/events/iwmse-2023.html#353032739

Abstract

Growth of ScN and AlScN by reactive sputter epitaxy

Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.7

Abstract

Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices

Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 44.1

Abstract

High resistive buffer layers by Fermi-level engineering

Dadgar, Armin; Borgmann, Ralf; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.1

Abstract

Progress in local growth of III/V-semiconductor structures

Bruckmann, Christian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel O.32.1

Abstract

Epitaxial growth of GaN buffer layers on Si(111) by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Strittmatter, André; Dadgar, Armin

In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 7.6

Begutachteter Zeitschriftenartikel

High resistive buffer layers by Fermi level engineering

Dadgar, Armin; Borgmann, Ralf; Bläsing, Jörg; Strittmatter, André

In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 025701, insges. 9 S.

Begutachteter Zeitschriftenartikel

Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1−x)2O3 alloys

Kluth, Elias; Anhar Uddin Bhuiyan, A. F. M.; Meng, Lingyu; Bläsing, Jürgen; Zhao, Hongping; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin

In: Japanese journal of applied physics - Bristol : IOP Publ., Bd. 62 (2023), Heft 5, Artikel 051001, insges. 8 S.

Begutachteter Zeitschriftenartikel

Sputter epitaxy of AlN and GaN on Si(111)

Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: Physica status solidi / A - Weinheim : Wiley-VCH, Bd. 220 (2023), Heft 8, Artikel 2200609, insges. 6 S.

Begutachteter Zeitschriftenartikel

Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si

Mihalic, S.; Wade, E.; Lüttich, Christopher; Hörich, Florian; Sun, C.; Fu, Z.; Christian, B.; Dadgar, Armin; Strittmatter, André; Anbacher, O.

In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 155107, insges. 12 S.

Dissertation

Sputterepitaxie von Gruppe III-Nitriden

Hörich, Florian; Strittmatter, André

In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2023, 1 Online-Ressource (101 Seiten, 3,67 MB) [Literaturverzeichnis: insg. 17 Seiten][Literaturverzeichnis: insg. 17 Seiten]

2022

Abstract

Epitaxy of high quality AlN and AlGaN layers on Si(111) by reactive pulsed sputtering

Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 28, Artikel AT 018

Abstract

Optical properties of the AlScN ternary system

Grümbel, Jona; Baron, Elias; Lüttich, Christopher; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Dadgar, Armin; Feneberg, Martin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 263, Artikel AT 195

Abstract

Analysis of vertical indium distribution in lattice-matched AlInN layers

Xin, Tianjiao; Berger, Christoph; Bläsing, Jürgen; Strittmatter, André

In: Konferenz: 20th International Conference on Metalorganic Vapor Phase Epitaxy, ICMOVPE XX, Fellbach, July 10 - 14, 2022, The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart . - 2022, S. 34, Artikel MoA2.5

Abstract

MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Strittmatter, André

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 731, Artikel PP 363

Abstract

Growth of epitaxial GaN by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 609, Artikel PP 266

Abstract

Sputtering eptiaxy of transition metal nitrides and AlScN

Lüttich, Christoph; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Dempewolf, Anja; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 599, Artikel PP 256

Abstract

Laser-assisted local eptiaxy of ///-V compound semiconductors

Trippel, Max; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022

Abstract

Heavily Ge-doped GaN films - properties and applications

Berger, Christoph; Neugebauer, S.; Dadgar, Armin; Schürmann, H.; Bläsing, Jürgen; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 112

Abstract

GaN quantum dots in vertical resonant cavity structure

Schürmann, Hannes; Berger, Christoph; Kang, Gao; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Holmes, Mark; Christen, Jürgen

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 720

Abstract

Alternately Si and C doped GaN layers for enhanced buffer breakdown

Dadgar, Armin; Borgmann, Ralf; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André

In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 576

Abstract

Structural and elastic properties of ScxAl1 xN

Mihalic, Saskia; Dadgar, Armin; Feil, Niclas M.; Lüttich, Christopher; Strittmatter, André; Ambacher, Oliver

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

Abstract

Growth of epitaxial GaN by reactive magnetron sputtering

Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

Abstract

Metal micro-contacts deposited by focused electron and ion beam - impact on electrical properties

Wein, Konstantin; Schmidt, Gordon; Bertram, Frank; Petzold, Silke; Veit, Peter; Berger, Christoph; Strittmatter, André; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022

Buchbeitrag

Sputter epitaxy of AlN and GaN on Si for device applications

Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Lüttich, Christopher; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André

In: Konferenz: 2022 Compound Semiconductor Week, CSW, Ann Arbor, MI, USA, 01-03 June 2022, 2022 Compound Semiconductor Week (CSW) - Piscataway, NJ: IEEE . - 2022

Begutachteter Zeitschriftenartikel

Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes

Berger, Christoph; Neugebauer, S.; Hörich, Florian; Dadgar, Armin; Strittmatter, André

In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 132 (2022), Artikel 233103, insges. 9 S.

Begutachteter Zeitschriftenartikel

Laser-assisted local metalorganic vapor phase epitaxy

Trippel, Max; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: Review of scientific instruments - [S.l.]: American Institute of Physics, Bd. 93 (2022), insges. 14 S.

Begutachteter Zeitschriftenartikel

Desorption induced formation of low-density GaN quantum dots - nanoscale correlation of structural and optical properties

Schürmann, Hannes; Schmidt, Gordon; Bertram, Frank; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 14, Artikel 145102, insges. 7 S.

Begutachteter Zeitschriftenartikel

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Sana, Prabha; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 61 (2022), 1, insges. 7 S.

Begutachteter Zeitschriftenartikel

Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors

Challa, S. R.; Witte, Hartmut; Schmidt, Gordon; Bläsing, Jürgen; Vega, N.; Kristukat, C.; Müller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, André

In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 11, Artikel 115107, insges. 7 S.

Dissertation

Fabrication of electrically pumped vertical cavity surface emitters employing GaN:Mg/GaN:Ge tunnel junction contacts

Seneza, Cleophace; Strittmatter, André

In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2022, 1 Online-Ressource (xv, 93 Seiten, 3,74 MB) [Literaturverzeichnis: Seite 83-87]

Artikel in Kongressband

MOVPE-grown optoelectronic devices with GaN:Mg/GaN:Ge tunnel junctions

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG . - 2022

2021

Begutachteter Zeitschriftenartikel

Low-resistivity vertical current transport across AlInN/GaN interfaces

Sana, Prabha; Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Schmidt, Marc-Peter; Bläsing, Jürgen; Neugebauer, Silvio; Hörich, Florian; Dadgar, Armin; Strittmatter, André

In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 60 (2021), 14, insges. 12 S.

Begutachteter Zeitschriftenartikel

Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer

Challa, Seshagiri Rao; Vega, Nahuel A.; Mueller, Nahuel A.; Kristukat, Christian; Debray, Mario E.; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: IEEE transactions on electron devices/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, Bd. 68 (2021), 1, S. 24-28

Begutachteter Zeitschriftenartikel

Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy

Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 571 (2021), insges. 4 S.

2020

Abstract

GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 8.3[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

Abstract

Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks

Witte, Hartmut; Seneza, Cleophace; Sana, Prabha; Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.5[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

Abstract

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]

Buchbeitrag

Submonolayer quantum dots

Owschimikow, Nina; Herzog, Bastian; Lingnau, Benjamin; Lüdge, Kathi; Lenz, Andrea; Eisele, Holger; Dähne, Mario; Niermann, Tore; Lehmann, Mario; Schliwa, Andrei; Strittmatter, André; Pohl, Udo W.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 13-51 - ( Springer series in solid-state sciences; 194)

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Stressor-induced site control of quantum dots for single-photon sources

Pohl, Udo W.; Strittmatter, André; Schliwa, A.; Lehmann, M.; Niermann, T.; Heindel, T.; Reitzenstein, S.; Kantner, M.; Bandelow, U.; Koprucki, T.; Wünsche, H.-J.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 53-90 - ( Springer series in solid-state sciences; 194)

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Nitride microcavities and single quantum dots for classical and non-classical light emitters

Schmidt, Gordon; Berger, Christoph; Dadgar, Armin; Bertram, Frank; Veit, P.; Metzner, Susanne; Strittmatter, André; Christen, Jürgen; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.

In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)

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In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116 (2020), issue 2, article 023102, 6 Seiten

2019

Abstract

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTs) to heavy-ion irradiation

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Abstract

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In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef : DPG - 2019, Art. Hl 24.9

Abstract

Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR

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In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Abstract

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Abstract

Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

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Abstract

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In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online

Abstract

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In: DRIP XVIII, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Berlin, 8-12 September 2019, 2019, S. -, Online

Abstract

GaN:Mg/GaN:Ge tunnel junctions for better light emitters

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André

In: ICNS13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online

Abstract

Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack

Sheng, B.; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Bläsing, Jürgen; Miyake, H.; Li, H.; Qin, Z.; Strittmatter, André; Christen, Jürgen; Shen, B.; Wang, X.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Abstract

Small-area current injection in GaN-based light emitters with tunnel junctions

Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, Andrée-Woo

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Abstract

Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties

Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, Marc-Peter; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK - Dresden . - 2019

Abstract

Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Witte, Hartmut; Christen, Jürgen; Strittmatter, André

In: Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019, 13th International Conference on Nitride Semiconductors - Washington . - 2019

Abstract

Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations

Schmidt, Gordon; Veit, Peter; Metzner, Sebastian; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Konferenz: 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP XVIII, Berlin, September, 8-12, 2019, Microscopy and microanalysis - New York, NY : Cambridge University Press, Bd. 22 (2019), S. 602-603

Abstract

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)

Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.; Debray, M.; Schmidt, Gordon; Christen, Jürgen; Hörich, Florian; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Abstract

Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector

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In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Abstract

Growth of desorption-induced GaN quantum-dots

Berger, Christoph; Schmidt, Gordon; Schürmann, Hannes; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André; Kalinoswki, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Abstract

Metastable negative differential capacitances in GaN-based pn-and tunnel-junctions

Witte, Hartmut; Fariza, Aqdas; Neugebauer, Silvio; Berger, Christoph; Dadgar, Armin; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.2[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Abstract

1D photonic bandgap structures for high-power GaN/InGaN laser divices

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Deckert, M.; Witte, Hartmut; Christen, Jürgen; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]

Buchbeitrag

Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)

Schuermann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, Stefan; Callsen, Gordon; Jagsch, Stefan; Wagner, Markus; Hoffmann, Axel

In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)

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Photon-number-resolving transition-edge sensors for the metrology of photonic microstructures based on semiconductor quantum dots

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In: Proceedings of SPIE - Bellingham, Wash.: SPIE, Volume 10933 (2019)[Konferenz: Advances in Photonics of Quantum Computing, Memory, and Communication XII, San Francisco, California, United States, 2 - 7 February 2019]

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2018

Abstract

Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)

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Abstract

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Abstract

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Abstract

MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic applications

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Abstract

On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation

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Abstract

Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors

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Abstract

Carbon incorporation in GaN by intrinsic and extrinsic C-doping

Dadgar, Armin; Jankowski, N.; Poliani, E.; Wagner, M. R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Bläsing, Jürgen; Hoffmann, Axel; Strittmatter, André

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Abstract

Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures

Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

Abstract

Laser-assisted local metalorganic vapor phase epitaxy

Trippel, Max; Wieneke, Matthias; Dadgar, Armin; Strittmatter, André

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Abstract

Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping

Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Poliani, E.; Wagner, M. R.; Maultzsch, J.; Dadgar, Armin; Strittmatter, André; Hoffmann, A.; Christen, Jürgen

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Abstract

Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector

Schürmann, H.; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Hoffmann, A.

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Abstract

GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy

Berger, Christoph; Neugebauer, Silvio; Seneza, C.; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

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Abstract

Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector

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In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]

Abstract

Desorption induced formation of deep UV-emitting nanostructures

Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Kalinowski, S.; Callsen, G.; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.; Christen, Jürgen

In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]

Abstract

Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation

Bertram, Frank; Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018[Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]

Abstract

Development of high brightness (In,Ga,Al)- N laser devices - theory and experiment

Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Dadgar, Armin; Bläsing, Jürgen; Metzner, Sebastian; Deckert, Martin; Witte, Hartmut; Strittmatter, André

In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn

Abstract

Tunnel junction design for InGaN/GaN-based light emitters

Strittmatter, André

In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018[Biophotonics, Biomedical Optics, and Imaging Conference, BIOS, San Francisco, USA, 27-28 January 2018]

Abstract

Characteristics of InAsSb/GaAs submonolayer lasers

Quandt, David; Arsenijevic, Dejan; Bimberg, Dieter; Strittmatter, André

In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL36.4[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]

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Semiconductor quantum dot to fiber coupling system for 1.3m range

Žołnacz, Kinga; Urbańczyk, Wacław; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Musiał, Anna; Mrowiński, Paweł; Sek, Grzegorz; Poturaj, Krzysztof; Wójcik, Grzegorz; Mergo, Paweł; Dybka, Kamil; Dyrkacz, Marius; Dłubek, Michał

In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Vol. 10674.2018, Art. 106741R

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Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements

Susilo, Norman; Roumeliotis, Georgios G.; Narodovitch, Michael; Witzigmann, Bernd; Rychetsky, Monir; Neugebauer, Silvio; Guttmann, Martin; Enslin, Johannes; Dadgar, Armin; Niermann, Tore; Wernicke, Tim; Strittmatter, André; Lehmann, Michael; Papadimitriou, Dimitra N.; Kneissl, Michael

In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 51.2018, 48, Art. 485103, insgesamt 6 S.

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Two charge states of the C N acceptor in GaN - evidence from photoluminescence

Reshchikov, M. A.; Vorobiov, M.; Demchenko, D. O.; Ozgur, Ü.; Morkoç, H.; Lesnik, A.; Hoffmann, M. P.; Hörich, Florian; Dadgar, Armin; Strittmatter, André

In: Physical review - Woodbury, NY : Inst. - Vol. 98.2018, 12-15, Art. 125207

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Analysis of InAsSb/GaAs submonolayer stacks

Quandt, David; Bläsing, Jürgen; Strittmatter, André

In: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, Bd. 494 (2018), S. 1-7

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Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography

Srocka, N.; Musiał, A.; Schneider, P.-I.; Mrowiński, P.; Holewa, P.; Burger, S.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sȩk, G.

In: AIP Advances - New York, NY : American Inst. of Physics - Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.

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A stand-alone fiber-coupled single-photon source

Schlehahn, Alexander; Fischbach, Sarah; Schmidt, Ronny; Kaganskiy, Arsenty; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan

In: Scientific reports - [London] : Macmillan Publishers Limited, part of Springer Nature - Vol. 8.2018, Art. 1340, insgesamt 7 S.

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Enhancing the photon-extraction efficiency of site-controlled quantum dots by deterministically fabricated microlenses

Kaganskiy, Arsenty; Fischbach, Sarah; Strittmatter, André; Rodt, Sven; Heindel, Tobias; Reitzenstein, Stephan

In: Optics communications - Amsterdam : [Verlag nicht ermittelbar], Bd. 413 (2018), S. 162-166

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Generation of maximally entangled states and coherent control in quantum dot microlenses

Bounouar, Samir; Haye, Christoph; Strauß, Max; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

In: Applied physics letters - Melville, NY : American Inst. of Physics - Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.

Artikel in Kongressband

Photon noise suppression by a built-in feedback loop

Al-Ashouri, A.; Merkel, B.; Geller, M.; Ludwig, A.; Wieck, A. D.; Schulze, J.-H.; Strittmatter, André; Kurzmann, A.; Lorke, A.

In: ResearchGATE: scientific neetwork ; the leading professional network for scientists - Cambridge, Mass.: ResearchGATE Corp., 2010 . - 2018, insges. 11 S.

2017

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Path-controlled time reordering of paired photons in a dressed three-level cascade

Bounouar, Samir; Strauß, Max; Carmele, Alexander; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Hans-Peter; Strittmatter, André; Rodt, Sven; Knorr, Andreas; Reitzenstein, Stephan

In: Physical review letters - College Park, Md : APS, Vol. 118.2017, 23, Artikel 233601

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Two-photon interference from remote deterministic quantum dot microlenses

Thoma, A.; Schnauber, P.; Böhm, J.; Gschrey, M.; Schulze, J.-H.; Strittmatter, André; Rodt, S.; Heindel, T.; Reitzenstein, S.

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011104

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Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source

Fischbach, Sarah; Schlehahn, Alexander; Thoma, Alexander; Srocka, Nicole; Gissibl, Timo; Ristok, Simon; Thiele, Simone; Kaganskiy, Arsenty; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Herkommer, Alois; Giessen, Harald; Reitzenstein, Stephan

In: ACS photonics / American Chemical Society - Washington, DC : ACS, Bd. 4 (2017), Heft 6, S. 1327-1332

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Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission

Maryński, A.; Mrowiński, P.; Ryczko, K.; Podemski, P.; Gawarecki, K.; Musiał, A.; Misiewicz, J.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sęk, G.

In: Acta physica Polonica / A - Warsaw : Acad. Inst, Bd. 132.2017, 2, S. 386-389

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Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique

Strauß, Max; Kaganskiy, Arsenty; Voigt, Robert; Schnauber, Peter; Schulze, Jan-Hendrik; Rodt, Sven; Strittmatter, André; Reitzenstein, Stephan

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 11, Art. 111101, insgesamt 5 S.

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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

Neugebauer, S.; Hoffmann, M. P.; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Niermann, T.; Narodovitch, M.; Lehmann, M.

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 10, Art. 102104, insgesamt 5 S.

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A bright triggered twin-photon source in the solid state

Heindel, T.; Thoma, A.; Helversen, M.; Schmidt, M.; Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Strittmatter, André; Beyer, J.; Rodt, S.; Carmele, A.; Knorr, A.; Reitzenstein, S.

In: Nature Communications - [London] : Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.

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Efficient single-photon source based on a deterministically fabricated single quantum dot - microstructure with backside gold mirror

Fischbach, Sarah; Kaganskiy, Arsenty; Tauscher, Esra Burcu Yarar; Gericke, Fabian; Thoma, Alexander; Schmidt, Ronny; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Reitzenstein, S.

In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.

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Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping

Fariza, A.; Lesnik, A.; Neugebauer, S.; Wieneke, Matthias; Hennig, J.; Bläsing, Jürgen; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: Journal of applied physics - Melville, NY : American Inst. of Physics - Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.

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Properties of C-doped GaN

Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.

Dissertation

Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter

Berger, Christoph; Strittmatter, André

In: Magdeburg, 2017, x, 149 Seiten, Illustrationen, Diagramme, 30 cm[Literaturverzeichnis: Seite 127-144]

2016

Buchbeitrag

On current injection into single quantum dots through oxide-confined pn-diodes

Kantner, M.; Bandelow, U.; Koprucki, T.; Schulze, J.-H.; Strittmatter, A.; Wunsche, H.-J.

In: 2016, S. 215-216, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84987606096&doi=10.1109%2fNUSOD.2016.7547002&partnerID=40&md5=548f2aaa0ecd8ae1bd9a8ca197b4822d

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Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A.R.; Strittmatter, A.; Hoffmann, A.; Giudici, P.

In: 2016, Bd. 119, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84975477719&doi=10.1063%2f1.4953585&partnerID=40&md5=d3fb08f11fc80688e73e9b41ff87e671

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Efficient current injection into single quantum dots through oxide-confined p-n-diodes

Kantner, M.; Bandelow, U.; Koprucki, T.; Schulze, J.-H.; Strittmatter, A.; Wunsche, H.-J.

In: 2016, Bd. 63, S. 2036-2042, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84977987215&doi=10.1109%2fTED.2016.2538561&partnerID=40&md5=0c2776d97cfbff0062e214e6c1ed082f

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Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Harrison, S.; Young, M.P.; Hodgson, P.D.; Young, R.J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U.W.; Bimberg, D.

In: 2016, Bd. 93, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958818386&doi=10.1103%2fPhysRevB.93.085302&partnerID=40&md5=4939288b1b09edc9b5def7edc7af9f82

Begutachteter Zeitschriftenartikel

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A. R.; Strittmatter, André; Hoffmann, A.; Giudici, P.

In: Journal of applied physics: AIP's archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, 1931, Vol. 119.2016, 23, Art. 235702

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Strong amplitude-phase coupling in submonolayer quantum dots

Herzog, B.; Lingnau, B.; Kolarczik, M.; Kaptan, Y.; Bimberg, D.; Maaßdorf, A.; Pohl, U.W.; Rosales, R.; Schulze, J.-H.; Strittmatter, A.; Weyers, M.; Woggon, U.; Lüdge, K.; Owschimikow, N.

In: 2016, Bd. 109, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84995783586&doi=10.1063%2f1.4967833&partnerID=40&md5=5d8ff853e2c944f973931f826b94f7b1

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Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Sala, E.M.; Stracke, G.; Selve, S.; Niermann, T.; Lehmann, M.; Schlichting, S.; Nippert, F.; Callsen, G.; Strittmatter, A.; Bimberg, D.

In: 2016, Bd. 109, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84986224286&doi=10.1063%2f1.4962273&partnerID=40&md5=1df56da375cb582c01c3dd020803c961

Begutachteter Zeitschriftenartikel

Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses

Jakubczyk, T.; Delmonte, V.; Fischbach, S.; Wigger, D.; Reiter, D.E.; Mermillod, Q.; Schnauber, P.; Kaganskiy, A.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Langbein, W.; Kuhn, T.; Reitzenstein, S.; Kasprzak, J.

In: 2016, Bd. 3, S. 2461-2466, https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006924981&doi=10.1021%2facsphotonics.6b00707&partnerID=40&md5=19feee84c779e1a02c857ea3d6273140

Begutachteter Zeitschriftenartikel

Exploring Dephasing of a Solid-State Quantum Emitter via Time- and Temperature-Dependent Hong-Ou-Mandel Experiments

Thoma, A.; Schnauber, P.; Gschrey, M.; Seifried, M.; Wolters, J.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Carmele, A.; Knorr, A.; Heindel, T.; Reitzenstein, S.

In: 2016, Bd. 116, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84956616555&doi=10.1103%2fPhysRevLett.116.033601&partnerID=40&md5=95ca3f34416be7ec8179cada81539559

Begutachteter Zeitschriftenartikel

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers

Neugebauer, Silvio; Metzner, Sebastian; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Bd. 253.2016, 1, S. 118-125

Begutachteter Zeitschriftenartikel

Generating single photons at gigahertz modulation-speed using electrically controlled quantum dot microlenses

Schlehahn, A.; Schmidt, R.; Hopfmann, C.; Schulze, J.-H.; Strittmatter, André; Heindel, T.; Gantz, L.; Schmidgall, E. R.; Gershoni, D.; Reitzenstein, S.

In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 108.2016, 2, Art. 021104, insgesamt 6 S.

Begutachteter Zeitschriftenartikel

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping

Berger, Christoph; Lesnik, Andreas; Zettler, Thomas; Schmidt, Gordon; Veit, Peter; Dadgar, Armin; Bläsing, Jürgen; Christen, Jürgen; Strittmatter, André

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 440.2016, S. 6-12

Begutachteter Zeitschriftenartikel

Clustered quantum dots in single GaN islands formed at threading dislocations

Schmidt, Gordon; Veit, Peter; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen

In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.

Begutachteter Zeitschriftenartikel

On reduction of current leakage in GaN by carbon-doping

Fariza, Aqdas; Lesnik, Andreas; Bläsing, Jürgen; Hoffmann, Marc P.; Hörich, Florian; Veit, Peter; Witte, Hartmut; Dadgar, Armin; Strittmatter, André

In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 109.2016, 21, Art. 212102, insgesamt 5 S.

Begutachteter Zeitschriftenartikel

Properties of C-doped GaN

Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André

In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961 . - 2016, insges. 7 S.

2015

Buchbeitrag

Indistinguishable photons from deterministically fabricated quantum dot microlenses

Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.

In: 2015, S. 371p, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84938825799&partnerID=40&md5=d39f469d7a898acc9dc48272d584467d

Begutachteter Zeitschriftenartikel

Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

Hennig, Jonas; Dadgar, Armin; Witte, Hartmut; Bläsing, Jürgen; Lesnik, Andreas; Strittmatter, André; Krost, Alois

In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 5.2015, 7, Art. 077146, insgesamt 8 S.

Begutachteter Zeitschriftenartikel

Operating single quantum emitters with a compact Stirling cryocooler

Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Heindel, T.; Reitzenstein, S.

In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.

Begutachteter Zeitschriftenartikel

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet

Schmidt, Gordon; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel

In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.

Begutachteter Zeitschriftenartikel

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Lesnik, Andreas; Veit, Peter; Schmidt, Gordon; Hempel, Thomas; Christen, Jürgen; Krost, Alois; Strittmatter, André

In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 414.2015, S. 105-109

Begutachteter Zeitschriftenartikel

Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing

Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan

In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 7, Art. 073903, insgesamt 6 S.

Begutachteter Zeitschriftenartikel

Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser

Schlehahn, A.; Gaafar, M.; Vaupel, M.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Stolz, W.; Rahimi-Iman, A.; Heindel, T.; Koch, M.; Reitzenstein, S.

In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 4, Art. 041105, insgesamt 5 S.

Begutachteter Zeitschriftenartikel

Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

Herzog, B.; Owschimikow, N.; Schulze, J.-H.; Rosales, R.; Kaptan, Y.; Kolarczik, M.; Switaiski, T.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Woggon, U.

In: 2015, Bd. 107, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84948414179&doi=10.1063%2f1.4935792&partnerID=40&md5=56f62faf3f927c9c8a22a79b19fcaa7d

Begutachteter Zeitschriftenartikel

Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography

Gschrey, M.; Thoma, A.; Schnauber, P.; Seifried, M.; Schmidt, R.; Wohlfeil, B.; Krüger, L.; Schulze, J.-H.; Heindel, T.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.

In: 2015, Bd. 6, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84937574558&doi=10.1038%2fncomms8662&partnerID=40&md5=237f13fcd77ef503e16462be850cd62a

Begutachteter Zeitschriftenartikel

Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy

Quandt, D.; Schulze, J.-H.; Schliwa, A.; Diemer, Z.; Prohl, C.; Lenz, A.; Eisele, H.; Strittmatter, A.; Pohl, U.W.; Gschrey, M.; Rodt, S.; Reitzenstein, S.; Bimberg, D.; Lehmann, M.; Weyland, M.

In: 2015, Bd. 91, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84935143066&doi=10.1103%2fPhysRevB.91.235418&partnerID=40&md5=62fb396531f4ee6778f530c7b286c7ca

Begutachteter Zeitschriftenartikel

Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication

Gschrey, M.; Schmidt, R.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.

In: 2015, Bd. 33, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84924967773&doi=10.1116%2f1.4914914&partnerID=40&md5=02d4468b1cfb67de612aa85d71d44aa0

Begutachteter Zeitschriftenartikel

Strain field of a buried oxide aperture

Kießling, F.; Niermann, T.; Lehmann, M.; Schulze, J.-H.; Strittmatter, A.; Schliwa, A.; Pohl, U.W.

In: 2015, Bd. 91, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84923206664&doi=10.1103%2fPhysRevB.91.075306&partnerID=40&md5=857b95a1c161ff80da8b731d0572a36a

Begutachteter Zeitschriftenartikel

230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

Bonato, L.; Sala, E.M.; Stracke, G.; Nowozin, T.; Strittmatter, A.; Ajour, M.N.; Daqrouq, K.; Bimberg, D.

In: 2015, Bd. 106, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84923914320&doi=10.1063%2f1.4906994&partnerID=40&md5=1143d24ddbcbde2309ad39b7efa8b767

Begutachteter Zeitschriftenartikel

Desorption induced GaN quantum dots on (0001) AlN by MOVPE

Bellmann, K.; Tabataba-Vakili, F.; Wernicke, T.; Strittmatter, A.; Callsen, G.; Hoffmann, A.; Kneissl, M.

In: 2015, Bd. 9, S. 526-529, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84942193697&doi=10.1002%2fpssr.201510217&partnerID=40&md5=837b6ba0090b04bc1ceae9add341091d

2014

Buchbeitrag

Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies

Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.

In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906084663&partnerID=40&md5=bb40ca7ad3e89534dbc9e6782523fe63

Buchbeitrag

Index-coupled quantum-dot distributed-feedback lasers

Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.

In: 2014, S. 240-241, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84921317498&doi=10.1109%2fIPCon.2014.6995337&partnerID=40&md5=8cf47c20d0638ae21545659909e0a18d

Buchbeitrag

Fabrication of deterministic quantum light sources using cathodoluminescence lithography

Gschrey, M.; Gericke, F.; Schmidt, R.; Schlottmann, E.; Schüssler, A.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.

In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84899739511&partnerID=40&md5=f369483f7203ca07497948edbe9cb96a

Buchbeitrag

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses

Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.

In: 2014, Bd. 2014-January, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84944699313&partnerID=40&md5=3b9e01a819da82c754b1cc07f4c15c4a

Buchbeitrag

Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses

Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heinde, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.

In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905482276&partnerID=40&md5=0c609ea395f59badbe1622dfc87026c0

Buchbeitrag

Indistinguishable photons from deterministic quantum dot microlenses

Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.

In: 2014, Bd. Part F3-EQEC 2015, https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016559968&partnerID=40&md5=bf81fc7624fc5b7556b19061c615735b

Begutachteter Zeitschriftenartikel

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality

Berger, C.; Dadgar, A.; Bläsing, J.; Lesnik, A.; Veit, P.; Schmidt, G.; Hempel, T.; Christen, J.; Krost, A.; Strittmatter, A.

In: Journal of Crystal Growth, 2014, S. , ISSN 00220248, 10.1016/j.jcrysgro.2014.09.008

Begutachteter Zeitschriftenartikel

15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots

Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.

In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908577783&doi=10.1063%2f1.4887063&partnerID=40&md5=8659e5950e8142998f84d030fa9a31df

Begutachteter Zeitschriftenartikel

Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots

Stracke, G.; Sala, E.M.; Selve, S.; Niermann, T.; Schliwa, A.; Strittmatter, A.; Bimberg, D.

In: 2014, Bd. 104, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84897373782&doi=10.1063%2f1.4870087&partnerID=40&md5=19ef35fe69322d1dbdc0c858df9e6958

2013

Buchbeitrag

Self-aligned quantum-dot growth for single-photon sources

Pohl, U.W.; Strittmatter, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Unrau, W.; Heindel, T.; Hitzemann, O.; Bimberg, D.; Reitzenstein, S.

In: 2013, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84882325064&doi=10.1109%2fICIPRM.2013.6562566&partnerID=40&md5=36fb63e5fd38aa8e2be2557383b6a0b1

Begutachteter Zeitschriftenartikel

In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

Gschrey, M.; Gericke, F.; Schüßler, A.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.

In: 2013, Bd. 102, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84879872412&doi=10.1063%2f1.4812343&partnerID=40&md5=34ecb3703ca38b8112ecc1a8bfa52395

Begutachteter Zeitschriftenartikel

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots

Switaiski, T.; Woggon, U.; Alden Angeles, D.E.; Hoffmann, A.; Schulze, J.-H.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.

In: 2013, Bd. 88, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84880834034&doi=10.1103%2fPhysRevB.88.035314&partnerID=40&md5=54e2bd2743b10f9f72e5fa2561e6fff5

Begutachteter Zeitschriftenartikel

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

Prohl, C.; Lenz, A.; Roy, D.; Schuppang, J.; Stracke, G.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Eisele, H.; Dähne, M.

In: 2013, Bd. 102, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84875940382&doi=10.1063%2f1.4798520&partnerID=40&md5=66789de1236a2a85e5d30e42383ece93

2012

Buchbeitrag

Site-selective growth of single quantum dots

Strittmatter, A.

In: 2012, Bd. 209, S. 2378, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871211692&doi=10.1002%2fpssa.201221943&partnerID=40&md5=439fc2628649e56b5ed722bfac8db02a

Begutachteter Zeitschriftenartikel

Site-controlled quantum dot growth on buried oxide stressor layers

Strittmatter, A.; Holzbecher, A.; Schliwa, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.

In: 2012, Bd. 209, S. 2411-2420, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871226189&doi=10.1002%2fpssa.201228407&partnerID=40&md5=80edf552a4ddf09da1b688b9ee3b1b8d

Begutachteter Zeitschriftenartikel

Growth of In0.25Ga0.75 As quantum dots on GaP utilizing a GaAs interlayer

Stracke, G.; Glacki, A.; Nowozin, T.; Bonato, L.; Rodt, S.; Prohl, C.; Lenz, A.; Eisele, H.; Schliwa, A.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.

In: 2012, Bd. 101, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870528123&doi=10.1063%2f1.4768294&partnerID=40&md5=07246f419ce8fcd0b4c02f0ae58f5cfb

Begutachteter Zeitschriftenartikel

Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection

Unrau, W.; Quandt, D.; Schulze, J.-H.; Heindel, T.; Germann, T.D.; Hitzemann, O.; Strittmatter, A.; Reitzenstein, S.; Pohl, U.W.; Bimberg, D.

In: 2012, Bd. 101, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870036893&doi=10.1063%2f1.4767525&partnerID=40&md5=b08fe32939126f83e67330162dca98d4

Begutachteter Zeitschriftenartikel

Lateral positioning of InGaAs quantum dots using a buried stressor

Strittmatter, A.; Schliwa, A.; Schulze, J.-H.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.

In: 2012, Bd. 100, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857942663&doi=10.1063%2f1.3691251&partnerID=40&md5=99dcefc77d1478eead0fcefd2b6d3993

Begutachteter Zeitschriftenartikel

High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots

Posilovic, K.; Kalosha, V.P.; Winterfeldt, M.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Strittmatter, A.; Bimberg, D.; Pohl, J.; Weyers, M.

In: 2012, Bd. 48, S. 1419-1420, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84868707765&doi=10.1049%2fel.2012.3174&partnerID=40&md5=de41ab1a028d264e4a2074ca9c4e48c6

Begutachteter Zeitschriftenartikel

Atomic structure of closely stacked InAs submonolayer depositions in GaAs

Niermann, T.; Kieling, F.; Lehmann, M.; Schulze, J.-H.; Germann, T.D.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.

In: 2012, Bd. 112, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84868343890&doi=10.1063%2f1.4758301&partnerID=40&md5=271b84a43c69da84bb802d65220996ed

Begutachteter Zeitschriftenartikel

Electro-optical resonance modulation of vertical-cavity surface-emitting lasers

Germann, T.D.; Hofmann, W.; Nadtochiy, A.M.; Schulze, J.-H.; Mutig, A.; Strittmatter, A.; Bimberg, D.

In: 2012, Bd. 20, S. 5099-5107, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857553437&doi=10.1364%2fOE.20.005099&partnerID=40&md5=12de1af8db3f005e2efa288225165788

2011

Buchbeitrag

InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Chua, C.; Yang, Z.; Knollenberg, C.; Teepe, M.; Cheng, B.; Strittmatter, A.; Bour, D.; Johnson, N.M.

In: 2011, Bd. 7939, https://www.scopus.com/inward/record.uri?eid=2-s2.0-79955769720&doi=10.1117%2f12.875188&partnerID=40&md5=ad61566de7601beffef54127f0ce0985

Begutachteter Zeitschriftenartikel

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers

Strittmatter, A.; Teepe, M.; Knollenberg, C.; Johnson, N.M.

In: 2011, Bd. 314, S. 1-4, https://www.scopus.com/inward/record.uri?eid=2-s2.0-78651092912&doi=10.1016%2fj.jcrysgro.2010.09.064&partnerID=40&md5=03cc71d658d3cb8b4e056228e5ef2a72

Begutachteter Zeitschriftenartikel

Semi-polar nitride surfaces and heterostructures

Strittmatter, A.; Northrup, J.E.; Johnson, N.M.; Kisin, M.V.; Spiberg, P.; El-Ghoroury, H.; Usikov, A.; Syrkin, A.

In: 2011, Bd. 248, S. 561-573, https://www.scopus.com/inward/record.uri?eid=2-s2.0-79951748895&doi=10.1002%2fpssb.201046422&partnerID=40&md5=69925d229b3d6922d53261ab16ee799c

Begutachteter Zeitschriftenartikel

In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers

Wunderer, T.; Northrup, J.E.; Yang, Z.; Teepe, M.; Strittmatter, A.; Johnson, N.M.; Rotella, P.; Wraback, M.

In: 2011, Bd. 99, https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855218172&doi=10.1063%2f1.3663575&partnerID=40&md5=fce419f6a3828585d17370dd3d43edac

Begutachteter Zeitschriftenartikel

Atomic structure and optical properties of InAs submonolayer depositions in GaAs

Lenz, A.; Eisele, H.; Becker, J.; Schulze, J.-H.; Germann, T.D.; Luckert, F.; Pötschke, K.; Lenz, E.; Ivanova, L.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Dähne, M.

In: 2011, Bd. 29, https://www.scopus.com/inward/record.uri?eid=2-s2.0-80051910627&doi=10.1116%2f1.3602470&partnerID=40&md5=ad23b2aa6e5dc9091e632497b52ce14e

2010

Buchbeitrag

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

Strittmatter, A.; Teepe, M.; Knollenberg, C.; Yang, Z.; Chua, C.; Johnson, N.M.; Spiberg, P.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.

In: 2010, Bd. 7616, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77951522884&doi=10.1117%2f12.842177&partnerID=40&md5=069ebe1a13ee28c2100053820ea8207d

Buchbeitrag

Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures

Strittmatter, A.; Teepe, M.; Yang, Z.; Chua, C.; Northrup, J.; Johnson, N.M.; Spiberg, P.; Brown, R.G.W.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.

In: 2010, Bd. 7, S. 1814-1816, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955798387&doi=10.1002%2fpssc.200983557&partnerID=40&md5=6d7287e07549d46e465bdb7112c776bf

Begutachteter Zeitschriftenartikel

Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation

Germann, T.D.; Strittmatter, A.; Mutig, A.; Nadtochiy, A.M.; Lott, J.A.; Blokhin, S.A.; Karachinsky, L.Y.; Shchukin, V.A.; Ledentsov, N.N.; Pohl, U.W.; Bimberg, D.

In: 2010, Bd. 7, S. 2552-2554, https://www.scopus.com/inward/record.uri?eid=2-s2.0-78449245283&doi=10.1002%2fpssc.200983889&partnerID=40&md5=2c14db881b73020eb85fdbfc79e57e73

Begutachteter Zeitschriftenartikel

Nitride laser diodes with nonepitaxial cladding layers

Cheng, B.; Chua, C.L.; Yang, Z.; Teepe, M.; Knollenberg, C.; Strittmatter, A.; Johnson, N.

In: 2010, Bd. 22, S. 329-331, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955178653&doi=10.1109%2fLPT.2009.2039564&partnerID=40&md5=a8bf8a5b552ceece909b0a86301be98e

Begutachteter Zeitschriftenartikel

Structural characterization of thick (112Ì¿2) GaN layers grown by HVPE on m-plane sapphire

Usikov, A.; Soukhoveev, V.; Shapovalov, L.; Syrkin, A.; Ivantsov, V.; Scanlan, B.; Nikiforov, A.; Strittmatter, A.; Johnson, N.; Zheng, J.-G.; Spiberg, P.; El-Ghoroury, H.

In: 2010, Bd. 207, S. 1295-1298, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954288208&doi=10.1002%2fpssa.200983655&partnerID=40&md5=a09391698417d9e2ecc80c881b14e4b3

Begutachteter Zeitschriftenartikel

Large internal dipole moment in InGaN/GaN quantum dots

Ostapenko, I.A.; Hönig, G.; Kindel, C.; Rodt, S.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.

In: 2010, Bd. 97, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955762884&doi=10.1063%2f1.3477952&partnerID=40&md5=00c5e219670ec7f20498b7769e69de6e

Begutachteter Zeitschriftenartikel

Atomic Structure of buried InAs sub-monolayer depositions in GaAs

Lenz, A.; Eisele, H.; Becker, J.; Ivanova, L.; Lenz, E.; Luckert, F.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dähne, M.

In: 2010, Bd. 3, https://www.scopus.com/inward/record.uri?eid=2-s2.0-78549258107&doi=10.1143%2fAPEX.3.105602&partnerID=40&md5=2d897d244b3743bcb0324a909fefe57a

Begutachteter Zeitschriftenartikel

Optical properties of InN grown on templates with controlled surface polarities

Kirste, R.; Wagner, M.R.; Schulze, J.H.; Strittmatter, A.; Collazo, R.; Sitar, Z.; Alevli, M.; Dietz, N.; Hoffmann, A.

In: 2010, Bd. 207, S. 2351-2354, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957899384&doi=10.1002%2fpssa.201026086&partnerID=40&md5=91c15642fcaaef8c990f9da6dbfd9609

2009

Buchbeitrag

Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance

Ledentsov, N.N.; Lott, J.A.; Shchukin, V.A.; Quast, H.; Hopfer, F.; Fiol, G.; Mutig, A.; Moser, P.; Germann, T.; Strittmatter, A.; Karachinsky, L.Y.; Blokhin, S.A.; Novikov, I.I.; Nadtochi, A.M.; Zakharov, N.D.; Werner, P.; Bimberg, D.

In: 2009, Bd. 7224, https://www.scopus.com/inward/record.uri?eid=2-s2.0-65649140013&doi=10.1117%2f12.810192&partnerID=40&md5=e523ebdbcd7dd7655b14934e7e5b5ade

2008

Buchbeitrag

Characterisation of an InAs quantum dot semiconductor disk laser

Schlosser, P.; Calvez, S.; Hastie, J.E.; Jin, S.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dawson, M.D.

In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-51349135539&doi=10.1109%2fCLEO.2008.4551842&partnerID=40&md5=a21ebf07cb931678e90726923c6b2b79

Buchbeitrag

High-speed directly and indirectly modulated VCSELs

Hopfer, F.; Mutig, A.; Strittmatter, A.; Fiol, G.; Moser, P.; Bimberg, D.; Shchukin, V.A.; Ledentsov, N.N.; Lott, J.A.; Quast, H.; Kuntz, M.; Mikhrin, S.S.; Krestnikov, I.L.; Livshits, D.A.; Kovsh, A.R.; Bornholdt, C.

In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-70149102251&doi=10.1109%2fICIPRM.2008.4703064&partnerID=40&md5=9d216fa4c9c47df02f7b7d8b818c04dc

Buchbeitrag

Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results

Shchukin, V.A.; Ledentsov, N.N.; Lott, J.A.; Quast, H.; Hopfer, F.; Karachinsky, L.Ya.; Kuntz, M.; Moser, P.; Mutig, A.; Strittmatter, A.; Kalosha, V.P.; Bimberg, D.

In: 2008, Bd. 6889, https://www.scopus.com/inward/record.uri?eid=2-s2.0-41149154823&doi=10.1117%2f12.784371&partnerID=40&md5=606adcee154d5835da01696a58f88b03

Buchbeitrag

Quantum-dot semiconductor disk-lasers

Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.

In: 2008, S. 197-198, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56449085715&doi=10.1109%2fINOW.2008.4634508&partnerID=40&md5=5e4daddb52c0aa7a521da285861247f0

Buchbeitrag

Characterisation of an InAs quantum dot semiconductor disk laser

Schlosser, P.; Calvez, S.; Hastie, J.E.; Jin, S.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dawson, M.D.

In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84898606255&partnerID=40&md5=7294f58ef8514b615825c8111a78b0be

Buchbeitrag

Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots

Winkelnkemper, M.; Dworzak, M.; Battel, T.P.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.

In: 2008, Bd. 245, S. 2766-2770, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56749174716&doi=10.1002%2fpssb.200844129&partnerID=40&md5=a980281a7ad80d7100047c80993650cd

Buchbeitrag

Phonon interaction in InGaAs/GaAs quantum dots

Werner, S.; Zimmer, P.; Strittmatter, A.; Hoffmann, A.

In: 2008, Bd. 1053, S. 12-16, https://www.scopus.com/inward/record.uri?eid=2-s2.0-67649215426&partnerID=40&md5=ae07d1daa1a65b1dc22bd975d6c00c02

Begutachteter Zeitschriftenartikel

1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime

Strittmatter, A.; Germann, T.D.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.

In: 2008, Bd. 44, S. 290-291, https://www.scopus.com/inward/record.uri?eid=2-s2.0-39349097506&doi=10.1049%2fel%3a20083131&partnerID=40&md5=999ade0a79ca0919af849a98a81610f9

Begutachteter Zeitschriftenartikel

Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots

Strittmatter, A.; Germann, T.D.; Kettler, Th.; Posilovic, K.; Pohl, J.; Pohl, U.W.; Bimberg, D.

In: 2008, Bd. 310, S. 5066-5068, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56549109153&doi=10.1016%2fj.jcrysgro.2008.07.069&partnerID=40&md5=95be1586eb165bb97083cc7efb74bb47

Begutachteter Zeitschriftenartikel

Quantum-dot semiconductor disk lasers

Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.

In: 2008, Bd. 310, S. 5182-5186, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56249093784&doi=10.1016%2fj.jcrysgro.2008.07.004&partnerID=40&md5=64905624421169d2df99d67929f1af73

Begutachteter Zeitschriftenartikel

Temperature-stable operation of a quantum dot semiconductor disk laser

Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.

In: 2008, Bd. 93, https://www.scopus.com/inward/record.uri?eid=2-s2.0-51849104570&doi=10.1063%2f1.2968137&partnerID=40&md5=81c25dbc90ec403a9f2b34c56b94c3e2

Begutachteter Zeitschriftenartikel

Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides

Winkelnkemper, M.; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.

In: 2008, Bd. 40, S. 2217-2219, https://www.scopus.com/inward/record.uri?eid=2-s2.0-41349095664&doi=10.1016%2fj.physe.2007.11.033&partnerID=40&md5=8f00bf17b34f23a7ac5c7a2185156046

Begutachteter Zeitschriftenartikel

High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots

Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.

In: 2008, Bd. 92, https://www.scopus.com/inward/record.uri?eid=2-s2.0-40849097939&doi=10.1063%2f1.2898165&partnerID=40&md5=acda2ba3b3ba547a35a492013e0e44ea

2007

Begutachteter Zeitschriftenartikel

Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots

Winkelnkemper, M.; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.

In: 2007, Bd. 101, https://www.scopus.com/inward/record.uri?eid=2-s2.0-34250635968&doi=10.1063%2f1.2743893&partnerID=40&md5=770302f8bee3d89a829e9c83d74b402a

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