Prof. Strittmatter
Prof. Dr. rer. nat. habil. André Strittmatter
Institut für Physik (IfP)
Aktuelle Projekte
Entwicklung hochbrillianter Quantenpunkt-Laserdioden mit 1250 nm Wellenlänge für LIDAR-Lichtquellen
Laufzeit: 01.04.2021 bis 31.03.2024
Neue Halbleiter-Lasertechnologie wird für light-detction and ranging (LIDAR) Systeme benötigt, die vor allem im Automotive-Bereich Anwendung finden. LIDAR beruht auf der omnidirektionale Ausssendung von Lichtpulsen und die zeitgenaue Erfassung ihrer Rückkehr von reflektierenden Objekten. Die Geschwindigkeit der Erfassung einzelner Objekte ist grundlegend von der Lichtleistung pro Puls abhängig, In konventionellen kantenemittierenden Halbleiter-Laserdioden divergiert stark in der vertikalen Achse der Emission wodurch nicht nur die Lichtleistung sondern auch die Ortsauflösung reduziert wird. Da die Lichtübertragung im frei zugänglichen Raum erfolgt, ist die Augensicherheit ein wichtiges Kriterium für die Auswahl der Laserwellenlänge. Bisherige Systeme arbeiten bei der nicht optimalen Wellenlänge von 905 nm, weil entsprechende Lichtquellen bei 1250 nm Wellenlänge bisher nicht demonstriert worden sind. In diesem Projekt kooperieren wir mit einer chinesischen Forschergruppe um diese Lücke zu schließen. Ein neuartiges Wellenleiterkonzept mit sehr geringer Divergenz im Ausgangsstrahl wird mit der Quantenpunkt-Technologie gekoppelt, die Wellenlänge von 1250 nm auf GaAs-Substraten zu ermöglichen.
Abgeschlossene Projekte
Röntgendiffraktometer
Laufzeit: 22.08.2017 bis 21.08.2022
Moderne Halbleiterschichtstrukturen bestehen heutzutage meist aus einer komplexen Vielfachschichtenfolge von kontrolliert abgeschiedenen Epitaxieschichten unterschiedlicher Materialzusammensetzung und Verspannung mit Schichtdicken von einigen Monolagen bis zu einigen Mikrometern. Die strukturelle Untersuchung derartiger Proben im Hinblick auf kristalline Perfektion, chemische Zusammensetzung,Verspannungszustand sowie der Schichtdicken und- rauhigkeiten ist Gegenstand von Röntgenbeugungexperimenten und ohne diese nicht möglich. Das beantragte hochauflösende Röntgendiffraktometer ermöglicht eine schnelle, zerstörungsfreie strukturelle Untersuchung sowohl von perfekt gitterangepaßten epitaktischen Halbleiterschichten und -Schichtsystemen wie auch von gitterfehlangepaßten und hoch texturierten Materialien bis hin zu kristallographischen Pulvern in Form von Dünnschichtsystemen oder kompakten Proben.
Rasterkraftmikroskop mit elektrochemischer Zelle
Laufzeit: 19.06.2017 bis 18.06.2022
Mit dem Rasterkraft-Mikroskop sollen in-situ elektrochemische Prozesse an Halbleiterschichten untersucht werden. Bei diesen Prozessen treten charakteristische Deformationen der Oberfläche auf, die nur mit einem Rasterkraftmikroskop mit der erforderlichen Auflösung messbar sind. Für die Beobachtung dieser Prozesse ist eine passende elektrochemische Zelle notwendig, in der die entsprechenden chemischen Prozesse ablaufen können und zudem die Oberfläche der Halbleiterstrukturen mit einem Rasterkraft-Mikroskop in schneller Folge abgetastet werden kann. Zwingend notwendig ist es zum Beispiel, die lateralen Dimensionen der durch elektrochemische Prozesse erzeugten Strukturen auf einer Nanometerskala zu kontrollieren. Diese Untersuchungen dienen weiter der Herstellung neuartiger elektrischer Halbleiterbauelemente mit skalierbarer Stromführung im Nanometerbereich. Zudem lassen sich für die Epitaxie von Nanoobjekten definierte Nukleationspunkte festlegen und somit eine deutlich verbesserteGenauigkeit in der Herstellung dieser Nanomaterialien erreichen.
High brightness GaN based laser diodes (HiBGaN)
Laufzeit: 01.04.2018 bis 31.03.2021
Visible LEDs and laser diodes are made of group-III-nitride materials grown by epitaxy methods. They already changed our daily life by their ubiquitous use for illumination and projection. High-power, high-brightness GaN-based lasers could replace discharge light bulbs or low-efficiency laser systems also in large-area display, projection, and other lighting systems as well as in free-space or underwater communication. In order to realize GaN-based lasers with high-brightness the conventional edge emitter design which is based on total interface reflection (TIR) waveguides must be substituted by a vertical mode-expanding waveguide structure. Thereby, a wider optical near-field is achieved resulting in narrower far-field angles of the emission profile. Simultaneously, the mode-expanding waveguide must stabilize the fundamental mode emission by discriminating higher order vertical modes through gain and loss engineering. This NSFC-DFG joint project aims to develop high-power, high-brightness (In,Ga,Al)N laser diodes using the novel photonic band crystal (PBC) laser concept. The principal investigators for this project are Prof. André Strittmatter from the Semiconductor epitaxy department of the Otto-von-Guericke University Magdeburg, Germany (OvGU) and Prof. Tong Cunzhu from Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), China. Both PI´s have strong background in PBC laser diodes and complementary expertise in simulation, nitride growth and characterization, and device fabrication.
Fundamental research on optimum optical and electrical design of the PBC structure itself and the laser structure in total is necessary. The successful realization of the design crucially depends on the available material combinations in the group-III nitride system. In particular, a materials study regarding mechanical strain, electrical conductivity, and optical losses for the PBC section must be conducted. HiBGaN combines the accumulated, complementary knowledge of both sides by distributing each task to the specific strength of each group. The German side has strong epitaxial growth ability of lattice-matched nitride materials which is prerequisite for thick, low-loss GaN-based PBC designs. OvGU is therefore responsible for the epitaxial growth and characterization of the laser structure. The Chinese side is responsible for design of PBC structures, fabrication and characterization of PBC lasers. Mutual research visits are negotiated to train students, exchange expert knowledge, and initiate long-term partnership between both institutions.
Teilprojekt A2 "Lineare Stressorstrukturen" im Sonderforschungsbereich 787: "Nanophotonik: Materialien, Modelle, Bauelemente" (Sprecherhochschule TU Berlin)
Laufzeit: 01.01.2016 bis 31.12.2019
The project aims at the advancement of the buried-stressor approach for fabricating (1) stripes of InGaAs- based carrier-localization layers for novel photonic devices and (2) single site-controlled long-wavelength QDs for fiber based quantum communication at telecom wavelengths; in addition, (3) device heterostructures will be developed and grown for other CRC projects.
- Active waveguide structures with a high density of Stranski-Krastanow quantum dots (SK QDs) and sub- monolayer (SML) depositions aligned in linear arrays will be developed. Target is the fabrication of efficient edge-emitting devices, LD/SOA based on SK QDs and SML depositions, and waveguide photodetectors with SK QDs, employing single and multiple layers of stressor-induced stripe formation - adapted to the optical mode. The active region of these devices hence shall be fabricated employing a self-aligned site control of either quantum dots or SML depositions.
Benefits of the buried-stressor approach for ridge-waveguide devices are:
- The active low-Eg medium is vertically and laterally embedded in a high-Eg matrix
- The structures are fabricated in a self-aligned bottom-up approach, without post-growth processing
- Low absorption losses, lateral index guiding, low noise (in detector applications)
Single site-controlled long-wavelength InGaAs QDs will be developed for single-photon sources operating at telecom wavelengths. The approach will apply the successful CRC phase-2 concept of buried stressors and additional pathways for emission red-shift like QD ripening and SRL overgrowth.
Epitaxy for energy-efficient high-bandwidth VCSELs based on SK-QDs, QWs, and SML structures pro- cessed in project C1 will also be performed. Devices will be designed for operation at 980 to 1240 nm emission wavelength required for short-range applications and silicon photonics. Furthermore, A2 will perform epitaxy of heterostructures with self-assembled InGaAs QDs emitting in the 900-980 nm spectral range for deterministic single-photon devices and integrated waveguide structures in C12.
2023
Abstract
Local heteroepitaxial growth of GaAs islands on Si by laser-assisted metal organic vapor phase epitaxy
Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André
In: DGKK/DEMBE 2023 - Stuttgart : Universität, S. 31
Abstract
Selective GaAs-based p/n-diode fabricated by laser-assisted metal organic vapor phase epitaxy
Bruckmann, Christian; Trippel, Max; Dadgar, Armin; Strittmatter, André
In: CSW 2023 - Jeju, Korea, S. 693, Artikel P2-010
Abstract
Advanced cathodoluminescence microscopy of a cascaded InGaN/GaN LED
Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wein, Konstantin; Christen, Jürgen; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 57, Artikel M07
Abstract
Group-III/V Quantum dots - controlling their properties and position through epitaxial growth
Strittmatter, André
In: Konferenz: iNOW2023, Würzburg, 16-27 July 2023, Abstract booklet of iNOW2023 - Würzburg : Universität
Abstract
(Late news) characterization of the space-charge region of a GaN pn-junction and pin-drift-diode using EBIC and CL
Eisele, Holger; Wein, Konstantin; Bertram, Frank; Schmidt, Gordon; Christen, Jürgen; Dadgar, Armin; Berger, Christoph; Strittmatter, André; Debald, Arne; Heuken, Michael; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Andrei; Faber, Samuel; Witzigmann, Bernd
In: Konferenz: 65th Electronic Materials Conference, Santa Barbara, June 28-30, 2023,, 65th Electronic Materials Conference - Santa Barbara, California : University . - 2023, S. 116-117, Artikel W04
Abstract
Improving the insulating properties of C-doped GaN buffer layers
Dadgar, Armin; Zweipfenning, Thorsten; Ehrler, Jasmin; Borgmann, Ralf; Bläsing, Jürgen; Kalisch, Holger; Vescan, Andrei; Strittmatter, André
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel TuP-ED-23
Abstract
Local epitaxial growth of GaAs islands for monolithic integration on Si
Bruckmann, Christian; Trippel, Max; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Abstract booklet of ISTDM-ICSI 2023 - Como, insges. 1 S.
Abstract
Local epitaxial growth by laser-assisted MOVPE
Strittmatter, André; Bruckmann, Christian; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin
In: FAME – First International Workshop on Fundamentals and Advances of MOVPE processes - IPIC Research Centre . - 2023
Abstract
Optical an structural characterization of an 'AlInN/GaN-based longitudinal photonic bandgap crystal laser structure
Schmidt, Gordon; Berger, Christoph; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-4
Abstract
GaN quantum dots in resonant cavity micropillars as deep UV single photon sources
Christen, Jürgen; Schuermann, Hannes; Bertram, Frank; Schmidt, Gordon; August, Olga; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Gao, Kong; Holmes, Marc; Arakawa, Yasuhiko
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH13-2
Abstract
Optical Nano-Charakterization of a Cascaded InGaN/GaN LED
Bertram, Frank; Schmidt, Gordon; Veit, Peter; Berger, Christoph; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Konferenz: 14th International Conference on Nitride Semiconductors, ICNS-14, Fukuoka, Japan, November 12-17, 2023, ICNS-14 - Fukuoka, Japan . - 2023, Artikel CH3-2
Abstract
HfN as conductive buffer for GaN epitaxy
Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin
In: International Workshop on Magnetron Sputter Epitaxy 2023, 19 - 20 Oktober, 2023, Dresden, S. 0, https://www.fep.fraunhofer.de/de/events/iwmse-2023.html#353032739
Abstract
Growth of ScN and AlScN by reactive sputter epitaxy
Hörich, Florian; Lüttich, Christopher; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.7
Abstract
Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices
Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 44.1
Abstract
High resistive buffer layers by Fermi-level engineering
Dadgar, Armin; Borgmann, Ralf; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 51.1
Abstract
Progress in local growth of III/V-semiconductor structures
Bruckmann, Christian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel O.32.1
Abstract
Epitaxial growth of GaN buffer layers on Si(111) by reactive magnetron sputtering
Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Strittmatter, André; Dadgar, Armin
In: Verhandlungen der Deutschen Physikalischen Gesellschaft / Deutsche Physikalische Gesellschaft - Bad Honnef : DPG . - 2023, Artikel HL 7.6
Begutachteter Zeitschriftenartikel
High resistive buffer layers by Fermi level engineering
Dadgar, Armin; Borgmann, Ralf; Bläsing, Jörg; Strittmatter, André
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 025701, insges. 9 S.
Begutachteter Zeitschriftenartikel
Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1−x)2O3 alloys
Kluth, Elias; Anhar Uddin Bhuiyan, A. F. M.; Meng, Lingyu; Bläsing, Jürgen; Zhao, Hongping; Strittmatter, André; Goldhahn, Rüdiger; Feneberg, Martin
In: Japanese journal of applied physics - Bristol : IOP Publ., Bd. 62 (2023), Heft 5, Artikel 051001, insges. 8 S.
Begutachteter Zeitschriftenartikel
Sputter epitaxy of AlN and GaN on Si(111)
Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André
In: Physica status solidi / A - Weinheim : Wiley-VCH, Bd. 220 (2023), Heft 8, Artikel 2200609, insges. 6 S.
Begutachteter Zeitschriftenartikel
Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si
Mihalic, S.; Wade, E.; Lüttich, Christopher; Hörich, Florian; Sun, C.; Fu, Z.; Christian, B.; Dadgar, Armin; Strittmatter, André; Anbacher, O.
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 134 (2023), Heft 2, Artikel 155107, insges. 12 S.
Dissertation
Sputterepitaxie von Gruppe III-Nitriden
Hörich, Florian; Strittmatter, André
In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2023, 1 Online-Ressource (101 Seiten, 3,67 MB) [Literaturverzeichnis: insg. 17 Seiten][Literaturverzeichnis: insg. 17 Seiten]
2022
Abstract
Epitaxy of high quality AlN and AlGaN layers on Si(111) by reactive pulsed sputtering
Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 28, Artikel AT 018
Abstract
Optical properties of the AlScN ternary system
Grümbel, Jona; Baron, Elias; Lüttich, Christopher; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Strittmatter, André; Goldhahn, Rüdiger; Dadgar, Armin; Feneberg, Martin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 263, Artikel AT 195
Abstract
Analysis of vertical indium distribution in lattice-matched AlInN layers
Xin, Tianjiao; Berger, Christoph; Bläsing, Jürgen; Strittmatter, André
In: Konferenz: 20th International Conference on Metalorganic Vapor Phase Epitaxy, ICMOVPE XX, Fellbach, July 10 - 14, 2022, The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart . - 2022, S. 34, Artikel MoA2.5
Abstract
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Strittmatter, André
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 731, Artikel PP 363
Abstract
Growth of epitaxial GaN by reactive magnetron sputtering
Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 609, Artikel PP 266
Abstract
Sputtering eptiaxy of transition metal nitrides and AlScN
Lüttich, Christoph; Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Dempewolf, Anja; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: International Workshop on Nitride Semiconductors - Berlin . - 2022, S. 599, Artikel PP 256
Abstract
Laser-assisted local eptiaxy of ///-V compound semiconductors
Trippel, Max; Wieneke, Matthias; Bläsing, Jürgen; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André
In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022
Abstract
Heavily Ge-doped GaN films - properties and applications
Berger, Christoph; Neugebauer, S.; Dadgar, Armin; Schürmann, H.; Bläsing, Jürgen; Veit, Peter; Christen, Jürgen; Strittmatter, André
In: The proceedings of the Fourteenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XX) - Stuttgart, 2022 . - 2022, S. 112
Abstract
GaN quantum dots in vertical resonant cavity structure
Schürmann, Hannes; Berger, Christoph; Kang, Gao; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Holmes, Mark; Christen, Jürgen
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 720
Abstract
Alternately Si and C doped GaN layers for enhanced buffer breakdown
Dadgar, Armin; Borgmann, Ralf; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André
In: International Workshop on Nitride Semiconductors - Berlin, 2022 . - 2022, S. 576
Abstract
Structural and elastic properties of ScxAl1 xN
Mihalic, Saskia; Dadgar, Armin; Feil, Niclas M.; Lüttich, Christopher; Strittmatter, André; Ambacher, Oliver
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Abstract
Growth of epitaxial GaN by reactive magnetron sputtering
Borgmann, Ralf; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Dempewolf, Anja; Bertram, Frank; Christen, Jürgen; Schmidt, Gordon
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Abstract
Metal micro-contacts deposited by focused electron and ion beam - impact on electrical properties
Wein, Konstantin; Schmidt, Gordon; Bertram, Frank; Petzold, Silke; Veit, Peter; Berger, Christoph; Strittmatter, André; Christen, Jürgen
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG, 1997 . - 2022
Buchbeitrag
Sputter epitaxy of AlN and GaN on Si for device applications
Dadgar, Armin; Hörich, Florian; Borgmann, Ralf; Lüttich, Christopher; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Christen, Jürgen; Strittmatter, André
In: Konferenz: 2022 Compound Semiconductor Week, CSW, Ann Arbor, MI, USA, 01-03 June 2022, 2022 Compound Semiconductor Week (CSW) - Piscataway, NJ: IEEE . - 2022
Begutachteter Zeitschriftenartikel
Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
Berger, Christoph; Neugebauer, S.; Hörich, Florian; Dadgar, Armin; Strittmatter, André
In: Journal of applied physics - Melville, NY : American Inst. of Physics, Bd. 132 (2022), Artikel 233103, insges. 9 S.
Begutachteter Zeitschriftenartikel
Laser-assisted local metalorganic vapor phase epitaxy
Trippel, Max; Bläsing, Jürgen; Wieneke, Matthias; Dadgar, Armin; Schmidt, Gordon; Bertram, Frank; Christen, Jürgen; Strittmatter, André
In: Review of scientific instruments - [S.l.]: American Institute of Physics, Bd. 93 (2022), insges. 14 S.
Begutachteter Zeitschriftenartikel
Desorption induced formation of low-density GaN quantum dots - nanoscale correlation of structural and optical properties
Schürmann, Hannes; Schmidt, Gordon; Bertram, Frank; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 14, Artikel 145102, insges. 7 S.
Begutachteter Zeitschriftenartikel
Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace; Berger, Christoph; Sana, Prabha; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 61 (2022), 1, insges. 7 S.
Begutachteter Zeitschriftenartikel
Defect characterization of heavy ion irradiated AllnN/GaN on Si high-electron-mobility transistors
Challa, S. R.; Witte, Hartmut; Schmidt, Gordon; Bläsing, Jürgen; Vega, N.; Kristukat, C.; Müller, N. A.; Debray, M. E.; Christen, J.; Dadgar, A.; Strittmatter, André
In: Journal of physics / D - Bristol : IOP Publ., Bd. 55 (2022), Heft 11, Artikel 115107, insges. 7 S.
Dissertation
Fabrication of electrically pumped vertical cavity surface emitters employing GaN:Mg/GaN:Ge tunnel junction contacts
Seneza, Cleophace; Strittmatter, André
In: Magdeburg: Universitätsbibliothek, Dissertation Otto-von-Guericke-Universität Magdeburg, Fakultät für Naturwissenschaften 2022, 1 Online-Ressource (xv, 93 Seiten, 3,74 MB) [Literaturverzeichnis: Seite 83-87]
Artikel in Kongressband
MOVPE-grown optoelectronic devices with GaN:Mg/GaN:Ge tunnel junctions
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Schmidt, Gordon; Schürmann, Hannes; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft/ Deutsche Physikalische Gesellschaft - Bad Honnef: DPG . - 2022
2021
Begutachteter Zeitschriftenartikel
Low-resistivity vertical current transport across AlInN/GaN interfaces
Sana, Prabha; Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Schmidt, Marc-Peter; Bläsing, Jürgen; Neugebauer, Silvio; Hörich, Florian; Dadgar, Armin; Strittmatter, André
In: Japanese journal of applied physics - Bristol: IOP Publ., Bd. 60 (2021), 14, insges. 12 S.
Begutachteter Zeitschriftenartikel
Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures - the role of the GaN channel layer
Challa, Seshagiri Rao; Vega, Nahuel A.; Mueller, Nahuel A.; Kristukat, Christian; Debray, Mario E.; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: IEEE transactions on electron devices/ Institute of Electrical and Electronics Engineers - New York, NY: IEEE, Bd. 68 (2021), 1, S. 24-28
Begutachteter Zeitschriftenartikel
Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy
Hörich, Florian; Borgmann, Ralf; Bläsing, Jürgen; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Christen, Jürgen; Strittmatter, André; Dadgar, Armin
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 571 (2021), insges. 4 S.
2020
Abstract
GaN:Ge as transparent conductive nitride contact layer for blue tunnel-junction LEDs
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 8.3[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]
Abstract
Thermally activated spreading resistance of Si- and Ge-doped lattice matched GaN/InAlN periodic stacks
Witte, Hartmut; Seneza, Cleophace; Sana, Prabha; Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 68.5[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]
Abstract
Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dempewolf, Anja; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: DPG-Frühjahrstagung: Dresden, 15. - 20. März 2020 - Bad Honnef: DPG, 2020, 2020, Vortrag: HL 30.27[Tagung: DPG-Frühjahrstagung, Dresden, 15. - 20. März 2020]
Buchbeitrag
Submonolayer quantum dots
Owschimikow, Nina; Herzog, Bastian; Lingnau, Benjamin; Lüdge, Kathi; Lenz, Andrea; Eisele, Holger; Dähne, Mario; Niermann, Tore; Lehmann, Mario; Schliwa, Andrei; Strittmatter, André; Pohl, Udo W.
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 13-51 - ( Springer series in solid-state sciences; 194)
Buchbeitrag
Stressor-induced site control of quantum dots for single-photon sources
Pohl, Udo W.; Strittmatter, André; Schliwa, A.; Lehmann, M.; Niermann, T.; Heindel, T.; Reitzenstein, S.; Kantner, M.; Bandelow, U.; Koprucki, T.; Wünsche, H.-J.
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 53-90 - ( Springer series in solid-state sciences; 194)
Buchbeitrag
Nitride microcavities and single quantum dots for classical and non-classical light emitters
Schmidt, Gordon; Berger, Christoph; Dadgar, Armin; Bertram, Frank; Veit, P.; Metzner, Susanne; Strittmatter, André; Christen, Jürgen; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.
In: Semiconductor Nanophotonics: Materials, Models, and Devices - Cham: Springer International Publishing, 2020; Kneissl, Michael . - 2020, S. 453-504 - (Springer series in solid-state sciences; 194)
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Tools for the performance optimization of single-photon quantum key distribution
Kupko, Timm; Helversen, Martin; Rickert, Lucas; Schulze, Jan-Hindrik; Strittmatter, André; Gschrey, Manuel; Rodt, Sven; Reitzenstein, Stephan; Heindel, Tobias
In: npj Quantum information - London: Nature Publ. Group, Vol. 6(2020), article number 29, 8 Seiten
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Individually resolved luminescence from closely stacked GaN/AlN quantum wells
Sheng, Bowen; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Wang, Yixin; Wang, Tao; Rong, Xin; Chen, Zhaoying; Wang, Ping; Bläsing, Jürgen; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Qin, Zhixin; Strittmatter, André; Shen, Bo; Christen, Jürgen; Wang, Xinqiang
In: Photonics research - Washington, DC : OSA, Bd. 8 (2020), Heft 4, S. 610-615
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Experimental re-evaluation of proton penetration ranges in GaAs and InGaP
Yaccuzzi, Exequiel; Di Napoli, Solange; Liscia, Emiliano; Suárez, Sergio; Alurralde, Martín; Strittmatter, André; Plá, Juan; Giudici, Paula
In: Journal of physics / D - Bristol: IOP Publ. . - 2020[Online first]
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Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 m
Podemski, Paweł; Musiał, Anna; Gawarecki, Krzysztof; Maryński, Aleksander; Gontar, Przemysław; Bercha, Artem; Trzeciakowski, Witold A.; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Sęk, Grzegorz
In: Applied physics letters - Melville, NY: American Inst. of Physics, Volume 116 (2020), issue 2, article 023102, 6 Seiten
2019
Abstract
On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTs) to heavy-ion irradiation
Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.A.; Debray, M.E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: ICNS-13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online
Abstract
Reactive pulsed sputtering of AIN and GaN
Hörich, Florian; Kahrmann, C.; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef : DPG - 2019, Art. Hl 24.9
Abstract
Single Photon Emission from MOVPE grown GaN Quantum Dots on Deep UV DBR
Schürmann, Hannes; Berger, Christoph; Kang, G.; Schmidt, Gordon; Veit, Peter; Bertram, Frank; Metzner, Sebastian; Bläsing, Jürgen; Strittmatter, André; Holmes, M.; Christen, Jürgen
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Abstract
Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, M.P.; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Abstract
Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping
Seneza, Cleophace; Berger, Christoph; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Abstract
Heavily Ge-doped GaN as transparent current spreading layer for blue tunnel junction light emitting diodes
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Hörich, Florian; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: DGKK Workshop Epitaxie von III-V Halbleitern, Dresden, 5-6 Dezember 2019, 2019, S. -, Online
Abstract
Study of AlInN/GaN on Si high-electron-mobility Transistors (HEMTs) tolerance to heavyion irradiation
Challa, Seshagiri Rao; Vega, N.; Kristukat, N.A.; Müller, N.A.; Debray, M.E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: DRIP XVIII, 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, Berlin, 8-12 September 2019, 2019, S. -, Online
Abstract
GaN:Mg/GaN:Ge tunnel junctions for better light emitters
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André
In: ICNS13, 13’th International Conference on Nitride Semiconductors, Bellevue, Washington, USA, 7-12 July 2019, 2019, S. -, Online
Abstract
Nanoscale structural and optical properties of deep UV-emitting GaN/AlN quantum well stack
Sheng, B.; Wang, Y.; Rong, X.; Chen, Z.; Wang, T.; Wang, P.; Schmidt, Gordon; Bertram, Frank; Veit, Peter; Bläsing, Jürgen; Miyake, H.; Li, H.; Qin, Z.; Strittmatter, André; Christen, Jürgen; Shen, B.; Wang, X.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL31.7[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Abstract
Small-area current injection in GaN-based light emitters with tunnel junctions
Berger, Christoph; Neugebauer, Silvio; Seneza, Cleophace; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, Andrée-Woo
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.5[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Abstract
Highly conductive Ge doped InAIN/GaN perodic stacks: structural and electrical properties
Sana, Prabha; Berger, Christoph; Witte, Hartmut; Dabrowski, J.; Schmidt, Marc-Peter; Metzner, Sebastian; Bläsing, Jürgen; Neugebauer, Silvio; Dempewolf, Anja; Schmidt, Gordon; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: Workshop der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung DGKK - Dresden . - 2019
Abstract
Lattice matched InAIN/GaN 1D photonic band gap crystral (PBC) structures for single mode high-power laser diodes
Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Witte, Hartmut; Christen, Jürgen; Strittmatter, André
In: Konferenz: 13th International Conference on Nitride Semiconductors, ICNS-13, Washington, July 7-12, 2019, 13th International Conference on Nitride Semiconductors - Washington . - 2019
Abstract
Nanoscale cathodoluminescence of an InGaN single quantum well intersected by individual dislocations
Schmidt, Gordon; Veit, Peter; Metzner, Sebastian; Berger, Christoph; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Konferenz: 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP XVIII, Berlin, September, 8-12, 2019, Microscopy and microanalysis - New York, NY : Cambridge University Press, Bd. 22 (2019), S. 602-603
Abstract
Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High-Electron-Mobility Transistors (HEMTS)
Challa, Seshagiri Rao; Vega, N.; Kristukat, C.; Müller, N.; Debray, M.; Schmidt, Gordon; Christen, Jürgen; Hörich, Florian; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2019, Art. HL2.8[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Abstract
Self-organized GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.4[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Abstract
Growth of desorption-induced GaN quantum-dots
Berger, Christoph; Schmidt, Gordon; Schürmann, Hannes; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Christen, Jürgen; Strittmatter, André; Kalinoswki, S.; Jagsch, S. T.; Callsen, G.; Wagner, M. R.; Hoffmann, A.
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL13.3[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Abstract
Metastable negative differential capacitances in GaN-based pn-and tunnel-junctions
Witte, Hartmut; Fariza, Aqdas; Neugebauer, Silvio; Berger, Christoph; Dadgar, Armin; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL2.2[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Abstract
1D photonic bandgap structures for high-power GaN/InGaN laser divices
Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Schmidt, Gordon; Dadgar, Armin; Bläsing, Jürgen; Deckert, M.; Witte, Hartmut; Christen, Jürgen; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2019, Art. HL36.10[Tagung: DPG-Frühjahrstagung, Regensburg, 31. März - 05. April 2019]
Buchbeitrag
Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector (conference presentation)
Schuermann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, Stefan; Callsen, Gordon; Jagsch, Stefan; Wagner, Markus; Hoffmann, Axel
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, 1963, Volume 10929 (2019)
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Photon-number-resolving transition-edge sensors for the metrology of photonic microstructures based on semiconductor quantum dots
Schmidt, Marco; Helversen, Martin; Schlottmann, Elisabeth; López, Marco; Gericke, Fabian; Schulze, Jan-Hindrik; Strittmatter, André; Schneider, Christian; Kück, Stefan; Höfling, Sven; Heindel, Tobias; Beyer, Jörn; Reitzenstein, Stephan
In: Proceedings of SPIE - Bellingham, Wash.: SPIE, Volume 10933 (2019)[Konferenz: Advances in Photonics of Quantum Computing, Memory, and Communication XII, San Francisco, California, United States, 2 - 7 February 2019]
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Outstanding reliability of heavy ion irradiated AlInN/GaN on silicon HFETs
Vega, Nahuel A.; Dadgar, Armin; Strittmatter, André; Challa, Seshagiri Rao; Ferreyra, Romualdo A.; Kristukat, Christian; Muller, Nahuel A.; Debray, Mario E.; Schmidt, Gordon; Witte, Hartmut; Christen, Jürgen
In: IEEE transactions on nuclear science : a publication of the IEEE Nuclear and Plasma Sciences Society / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 66.2019, 12, S. 2417-2421
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Intensive luminescence from a thick, indium-rich In0.7Ga0.3N film
Sheng, Bowen; Bertram, Frank; Zheng, Xiantong; Wang, Ping; Schmidt, Gordon; Veit, Peter; Bläsing, Jürgen; Chen, Zhaoying; Strittmatter, André; Christen, Jürgen; Shen, Bo; Wang, Xinqiang
In: Japanese journal of applied physics - Bristol: IOP Publ., Volume 58, issue 6 (2019), article 065503, insgesamt 6 Seiten
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Quantum metrology of solid-state single-photon sources using photon-number-resolving detectors
Helversen, Martin; Böhm, Jonas; Schmidt, Marco; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Beyer, Jörn; Heindel, Tobias; Reitzenstein, Stephan
In: New journal of physics - [Bad Honnef]: Dt. Physikalische Ges., Volume 21, issue 3 (2019), article 035007, insgesamt 8 Seiten
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Broadband semiconductor light Sources operating at 1060 nm based on InAs - Sb/GaAs submonolayer quantum dots
Herzog, Bastian; Lingnau, Benjamin; Kolarczik, Mirco; Helmrich, Sophia; Achtstein, Alexander; Thommes, Kevin; Alhussein, Fuad; Quandt, David; Strittmatter, André; Pohl, Udo
In: IEEE journal of selected topics in quantum electronics - New York, NY: IEEE, Volume 25, issue 6 (2019), article 1900310
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Static and dynamic characteristics of In(AsSb)/ GaAs submonolayer lasers
Quandt, David; Arsenijevic, Dejan; Strittmatter, André; Bimberg, Dieter H.
In: IEEE journal of quantum electronics - New York, NY: IEEE, Bd. 55.2019, 3, S. 1-7
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Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths
Mrowiński, Paweł; Musiał, Anna; Gawarecki, Krzysztof; Dusanowski, Łukasz; Heuser, Tobias; Srocka, Nicole; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Sęk, Grzegorz
In: Physical review - Woodbury, NY: Inst., Volume 100, issue 11 (2019), article 115310
2018
Abstract
Heavy-ion induced effects on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTs)
Challa, Seshagiri Rao; Vega, N.; Kristukat, Ch.; Debrey, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Kerstin; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: 9th Wide Band Gap Semiconductor and Components Workshop: 8-9th October 2018, ECSAT, Harwell, UK - Noordwijk: ESA-ESTEC, 2018, 2018, Devises 2[Workshop: 9th Wide Band Gap Semiconductor and Components Workshop, Harwell, UK, 8 - 9 October 2018]
Abstract
Amphoteric incorporation of carbon in GaN
Hoffmann, Axel; Jankowski, Nadja; Poliani, Emmanuele; Scheel, Harald; Wagner, Markus R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Zwieryz, R.; Kachel, K.; Bieckermann, M.; Bläsing, Jürgen; Strittmatter, André; Dadgar, Armin; Siche, D.
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Abstract
Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
Christen, Jürgen; Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Wagner, Markus R.; Maultzsch, Janina; Dadgar, Armin; Strittmatter, André
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
Abstract
Nanoscale investigation of GaN / AlN quantum dot formation
Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
Abstract
MOVPE and processing of blue micro-sized LEDs on Si(111) for optogenetic applications
Neugebauer, Silvio; Bläsing, Jürgen; Deckert, Martin; Lippert, Michael; Dadgar, Armin; Schmidt, Bertram; Ohl, Frank W.; Strittmatter, André
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Abstract
On tolerance of AlInN/GaN on Si High-Electron-Mobility Transistors to heavy-ion irradiation
Challa, Seshagiri Rao; Vega, Nahuel; Kristukat, Christian; Müller, N. A.; Dabray, M. E.; Schmidt, Gordon; Hörich, Florian; Witte, Hartmut; Christen, Jürgen; Dadgar, Armin; Strittmatter, André
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Abstract
Nanoscale characterization of high reflectivity AIN/AlGaN deep UV Bragg reflectors
Schmidt, Gordon; Veit, Peter; Schürmann, Hannes; Petzold, Silke; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Abstract
Carbon incorporation in GaN by intrinsic and extrinsic C-doping
Dadgar, Armin; Jankowski, N.; Poliani, E.; Wagner, M. R.; Fariza, Aqdas; Lesnik, Andreas; Hoffmann, Marc P.; Kahrmann, Christopher; Hörich, Florian; Bläsing, Jürgen; Hoffmann, Axel; Strittmatter, André
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
Abstract
Impact of growth interruption on the structure and luminescence of two- and zero-dimensional GaN/AlN heterostructures
Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL27.3[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]
Abstract
Laser-assisted local metalorganic vapor phase epitaxy
Trippel, Max; Wieneke, Matthias; Dadgar, Armin; Strittmatter, André
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]
Abstract
Nanoscale cathodoluminescence of a narrow band distributed Bragg reflector realized by GaN - Ge modulation doping
Schmidt, Gordon; Veit, Peter; Voß, A.; Reuper, Alexander; Metzner, Sebastian; Bertram, Frank; Berger, Christoph; Bläsing, Jürgen; Poliani, E.; Wagner, M. R.; Maultzsch, J.; Dadgar, Armin; Strittmatter, André; Hoffmann, A.; Christen, Jürgen
In: ICPS 2018: 34th International Conference on the Physics of Semiconductors, from29th July to 3rd August, 2018, Montpellier, France - Montpellier, 2018 . - 2018[Konferenz: 34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, 29.07. - 03.08.2018]
Abstract
Self-organized GaN quantum dots on a deep UV AlN/AlGaN distributed Bragg reflector
Schürmann, H.; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Hoffmann, A.
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Abstract
GaN-based LEDs with GaN:Mg/GaN:Ge tunnel junction grown by metalorganic vapor phase epitaxy
Berger, Christoph; Neugebauer, Silvio; Seneza, C.; Bläsing, Jürgen; Dadgar, Armin; Christen, Jürgen; Strittmatter, André
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa, 2018 . - 2018[Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]
Abstract
Self-assembled GaN quantum dots grown on a wavelength-matched deep UV AlN/AlGaN distributed Bragg reflector
Schürmann, Hannes; Schmidt, Gordon; Berger, Christoph; Metzner, Sebastian; Veit, Peter; Bläsing, Jürgen; Bertram, Frank; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Kalinowski, S.; Jagsch, S.; Hoffmann, A.
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn, 2018 . - 2018[Workshop: DGKK Workshop on Epitaxy of III-V Compounds 2018, Paderborn, 6. - 7. Dezember 2018]
Abstract
Desorption induced formation of deep UV-emitting nanostructures
Schürmann, Hannes; Bertram, Frank; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Kalinowski, S.; Callsen, G.; Jagsch, S. T.; Wagner, M. R.; Hoffmann, A.; Christen, Jürgen
In: International Workshop on UV Materials and Devices, IWUMD 2018: December 9-12, 2018, Kunming Yunan Conference Hotel, Kunming, China - Kunming, China, 2018 . - 2018[Workshop: International Workshop on UV Materials and Devices, IWUMD 2018, Kunming, China, December 9-12, 2018]
Abstract
Nanoscale cathodoluminescence investigation of GaN / AlN quantum dot formation
Bertram, Frank; Schürmann, Hannes; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Berger, Christoph; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen
In: Compound Semiconductor Week 2018, CSW 2018: 45th International Symposium on Compound Semiconductors, 30th International Conference on Indium Phosphide and Related Materials - Cambridge, MA, 2018 . - 2018[Compound Semiconductor Week 2018, CSW 2018, Cambridge, MA, USA, May 29-June 1, 2018]
Abstract
Development of high brightness (In,Ga,Al)- N laser devices - theory and experiment
Sana, Prabha; Berger, Christoph; Schmidt, Marc-Peter; Dadgar, Armin; Bläsing, Jürgen; Metzner, Sebastian; Deckert, Martin; Witte, Hartmut; Strittmatter, André
In: DGKK Workshop on Epitaxy of III-V Compounds 2018 - Paderborn
Abstract
Tunnel junction design for InGaN/GaN-based light emitters
Strittmatter, André
In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE, 2018 . - 2018[Biophotonics, Biomedical Optics, and Imaging Conference, BIOS, San Francisco, USA, 27-28 January 2018]
Abstract
Characteristics of InAsSb/GaAs submonolayer lasers
Quandt, David; Arsenijevic, Dejan; Bimberg, Dieter; Strittmatter, André
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, 2018, Art. HL36.4[Tagung: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V., Berlin, 2018]
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Semiconductor quantum dot to fiber coupling system for 1.3m range
Žołnacz, Kinga; Urbańczyk, Wacław; Srocka, Nicole; Heuser, Tobias; Quandt, David; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan; Musiał, Anna; Mrowiński, Paweł; Sek, Grzegorz; Poturaj, Krzysztof; Wójcik, Grzegorz; Mergo, Paweł; Dybka, Kamil; Dyrkacz, Marius; Dłubek, Michał
In: Proceedings of SPIE - Bellingham, Wash. : SPIE - Vol. 10674.2018, Art. 106741R
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Impact of AlN/Si Nucleation Layers Grown Either by NH3-MBE or MOCVD on the Properties of AlGaN/GaN HFETs
Yacoub, Hady; Zweipfennig, Thorsten; Kalisch, Holger; Vescan, Aandrei; Dadgar, Armin; Wieneke, Matthias; Bläsing, Jürgen; Strittmatter, André; Rennesson, Stephanie; Semond, Fabrice
In: Physica status solidi / A - Weinheim : Wiley-VCH - Vol. 215.2018, 9, Art. 1700638
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Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
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In: Journal of physics / D - Bristol: IOP Publ., 1968, Vol. 51.2018, 48, Art. 485103, insgesamt 6 S.
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Two charge states of the C N acceptor in GaN - evidence from photoluminescence
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In: Physical review - Woodbury, NY : Inst. - Vol. 98.2018, 12-15, Art. 125207
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Quandt, David; Bläsing, Jürgen; Strittmatter, André
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Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 m fabricated by in-situ electron-beam lithography
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In: AIP Advances - New York, NY : American Inst. of Physics - Vol. 8.2018, 8, Art. 085205, insgesamt 10 S.
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In: Scientific reports - [London] : Macmillan Publishers Limited, part of Springer Nature - Vol. 8.2018, Art. 1340, insgesamt 7 S.
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Generation of maximally entangled states and coherent control in quantum dot microlenses
Bounouar, Samir; Haye, Christoph; Strauß, Max; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Jan-Hindrik; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan
In: Applied physics letters - Melville, NY : American Inst. of Physics - Vol. 112.2018, 15, Art. 153107, insgesamt 6 S.
Artikel in Kongressband
Photon noise suppression by a built-in feedback loop
Al-Ashouri, A.; Merkel, B.; Geller, M.; Ludwig, A.; Wieck, A. D.; Schulze, J.-H.; Strittmatter, André; Kurzmann, A.; Lorke, A.
In: ResearchGATE: scientific neetwork ; the leading professional network for scientists - Cambridge, Mass.: ResearchGATE Corp., 2010 . - 2018, insges. 11 S.
2017
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Path-controlled time reordering of paired photons in a dressed three-level cascade
Bounouar, Samir; Strauß, Max; Carmele, Alexander; Schnauber, Peter; Thoma, Alexander; Gschrey, Manuel; Schulze, Hans-Peter; Strittmatter, André; Rodt, Sven; Knorr, Andreas; Reitzenstein, Stephan
In: Physical review letters - College Park, Md : APS, Vol. 118.2017, 23, Artikel 233601
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Two-photon interference from remote deterministic quantum dot microlenses
Thoma, A.; Schnauber, P.; Böhm, J.; Gschrey, M.; Schulze, J.-H.; Strittmatter, André; Rodt, S.; Heindel, T.; Reitzenstein, S.
In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011104
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Single quantum dot with microlens and 3D-printed micro-objective as integrated bright single-photon source
Fischbach, Sarah; Schlehahn, Alexander; Thoma, Alexander; Srocka, Nicole; Gissibl, Timo; Ristok, Simon; Thiele, Simone; Kaganskiy, Arsenty; Strittmatter, André; Heindel, Tobias; Rodt, Sven; Herkommer, Alois; Giessen, Harald; Reitzenstein, Stephan
In: ACS photonics / American Chemical Society - Washington, DC : ACS, Bd. 4 (2017), Heft 6, S. 1327-1332
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Optimizing the InGaAs/GaAs quantum dots for 1.3 m emission
Maryński, A.; Mrowiński, P.; Ryczko, K.; Podemski, P.; Gawarecki, K.; Musiał, A.; Misiewicz, J.; Quandt, D.; Strittmatter, André; Rodt, S.; Reitzenstein, S.; Sęk, G.
In: Acta physica Polonica / A - Warsaw : Acad. Inst, Bd. 132.2017, 2, S. 386-389
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Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique
Strauß, Max; Kaganskiy, Arsenty; Voigt, Robert; Schnauber, Peter; Schulze, Jan-Hendrik; Rodt, Sven; Strittmatter, André; Reitzenstein, Stephan
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All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
Neugebauer, S.; Hoffmann, M. P.; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Niermann, T.; Narodovitch, M.; Lehmann, M.
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A bright triggered twin-photon source in the solid state
Heindel, T.; Thoma, A.; Helversen, M.; Schmidt, M.; Schlehahn, A.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Strittmatter, André; Beyer, J.; Rodt, S.; Carmele, A.; Knorr, A.; Reitzenstein, S.
In: Nature Communications - [London] : Nature Publishing Group UK, Vol. 8.2017, 1, Art. 14870, insgesamt 7 S.
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In: Applied physics letters - Melville, NY : American Inst. of Physics, Vol. 110.2017, 1, Art. 011106, insgesamt 5 S.
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Leakage currents and fermi-level shifts in GaN layers upon iron and carbon-doping
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In: Journal of applied physics - Melville, NY : American Inst. of Physics - Vol. 122.2017, 2, Art. 025704, insgesamt 7 S.
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Properties of C-doped GaN
Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961, Vol. 254.2017, 8, Art. 1600708, insgesamt 7 S.
Dissertation
Metallorganische Gasphasenepitaxie von nitridischen Mikrokavitäten für vertikal emittierende Laser und Einzelphotonenemitter
Berger, Christoph; Strittmatter, André
In: Magdeburg, 2017, x, 149 Seiten, Illustrationen, Diagramme, 30 cm[Literaturverzeichnis: Seite 127-144]
2016
Buchbeitrag
On current injection into single quantum dots through oxide-confined pn-diodes
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Investigation of proton damage in III-V semiconductors by optical spectroscopy
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Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
Harrison, S.; Young, M.P.; Hodgson, P.D.; Young, R.J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U.W.; Bimberg, D.
In: 2016, Bd. 93, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958818386&doi=10.1103%2fPhysRevB.93.085302&partnerID=40&md5=4939288b1b09edc9b5def7edc7af9f82
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Investigation of proton damage in III-V semiconductors by optical spectroscopy
Yaccuzzi, E.; Khachadorian, S.; Suárez, S.; Reinoso, M.; Goñi, A. R.; Strittmatter, André; Hoffmann, A.; Giudici, P.
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Strong amplitude-phase coupling in submonolayer quantum dots
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In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 440.2016, S. 6-12
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Clustered quantum dots in single GaN islands formed at threading dislocations
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In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ., 1962, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.
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On reduction of current leakage in GaN by carbon-doping
Fariza, Aqdas; Lesnik, Andreas; Bläsing, Jürgen; Hoffmann, Marc P.; Hörich, Florian; Veit, Peter; Witte, Hartmut; Dadgar, Armin; Strittmatter, André
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 109.2016, 21, Art. 212102, insgesamt 5 S.
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Properties of C-doped GaN
Lesnik, Andreas; Hoffmann, Marc P.; Fariza, Aqdas; Bläsing, Jürgen; Witte, Hartmut; Veit, Peter; Hörich, Florian; Berger, Christoph; Hennig, Jonas; Dadgar, Armin; Strittmatter, André
In: Physica status solidi / B - Weinheim: Wiley-VCH, 1961 . - 2016, insges. 7 S.
2015
Buchbeitrag
Indistinguishable photons from deterministically fabricated quantum dot microlenses
Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.
In: 2015, S. 371p, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84938825799&partnerID=40&md5=d39f469d7a898acc9dc48272d584467d
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Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)
Hennig, Jonas; Dadgar, Armin; Witte, Hartmut; Bläsing, Jürgen; Lesnik, Andreas; Strittmatter, André; Krost, Alois
In: AIP Advances - New York, NY: American Inst. of Physics, Vol. 5.2015, 7, Art. 077146, insgesamt 8 S.
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Operating single quantum emitters with a compact Stirling cryocooler
Schlehahn, A.; Krüger, L.; Gschrey, M.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Heindel, T.; Reitzenstein, S.
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 1, Art. 013113, insgesamt 7 S.
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Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
Schmidt, Gordon; Berger, Christoph; Veit, Peter; Metzner, Sebastian; Bertram, Frank; Bläsing, Jürgen; Dadgar, Armin; Strittmatter, André; Christen, Jürgen; Callsen, Gordon; Kalinowski, Stefan; Hoffmann, Axel
In: Applied physics letters - Melville, NY: American Inst. of Physics, 1962, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.
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Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger, Christoph; Dadgar, Armin; Bläsing, Jürgen; Lesnik, Andreas; Veit, Peter; Schmidt, Gordon; Hempel, Thomas; Christen, Jürgen; Krost, Alois; Strittmatter, André
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, 1967, Bd. 414.2015, S. 105-109
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Advanced in-situ electron-beam lithography for deterministic nanophotonic device processing
Kaganskiy, Arsenty; Gschrey, Manuel; Schlehahn, Alexander; Schmidt, Ronny; Schulze, Jan-Hindrik; Heindel, Tobias; Strittmatter, André; Rodt, Sven; Reitzenstein, Stephan
In: Review of scientific instruments: a monthly journal devoted to scientific instruments, apparatus, and techniques - [S.l.]: American Institute of Physics, Vol. 86.2015, 7, Art. 073903, insgesamt 6 S.
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Single-photon emission at a rate of 14MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser
Schlehahn, A.; Gaafar, M.; Vaupel, M.; Gschrey, M.; Schnauber, P.; Schulze, J.-H.; Rodt, S.; Strittmatter, André; Stolz, W.; Rahimi-Iman, A.; Heindel, T.; Koch, M.; Reitzenstein, S.
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 4, Art. 041105, insgesamt 5 S.
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Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots
Herzog, B.; Owschimikow, N.; Schulze, J.-H.; Rosales, R.; Kaptan, Y.; Kolarczik, M.; Switaiski, T.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Woggon, U.
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Highly indistinguishable photons from deterministic quantum-dot microlenses utilizing three-dimensional in situ electron-beam lithography
Gschrey, M.; Thoma, A.; Schnauber, P.; Seifried, M.; Schmidt, R.; Wohlfeil, B.; Krüger, L.; Schulze, J.-H.; Heindel, T.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.
In: 2015, Bd. 6, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84937574558&doi=10.1038%2fncomms8662&partnerID=40&md5=237f13fcd77ef503e16462be850cd62a
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Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy
Quandt, D.; Schulze, J.-H.; Schliwa, A.; Diemer, Z.; Prohl, C.; Lenz, A.; Eisele, H.; Strittmatter, A.; Pohl, U.W.; Gschrey, M.; Rodt, S.; Reitzenstein, S.; Bimberg, D.; Lehmann, M.; Weyland, M.
In: 2015, Bd. 91, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84935143066&doi=10.1103%2fPhysRevB.91.235418&partnerID=40&md5=62fb396531f4ee6778f530c7b286c7ca
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Resolution and alignment accuracy of low-temperature in situ electron beam lithography for nanophotonic device fabrication
Gschrey, M.; Schmidt, R.; Schulze, J.-H.; Strittmatter, A.; Rodt, S.; Reitzenstein, S.
In: 2015, Bd. 33, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84924967773&doi=10.1116%2f1.4914914&partnerID=40&md5=02d4468b1cfb67de612aa85d71d44aa0
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Strain field of a buried oxide aperture
Kießling, F.; Niermann, T.; Lehmann, M.; Schulze, J.-H.; Strittmatter, A.; Schliwa, A.; Pohl, U.W.
In: 2015, Bd. 91, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84923206664&doi=10.1103%2fPhysRevB.91.075306&partnerID=40&md5=857b95a1c161ff80da8b731d0572a36a
Begutachteter Zeitschriftenartikel
230 s room-temperature storage time and 1.14 eV hole localization energy in In
Bonato, L.; Sala, E.M.; Stracke, G.; Nowozin, T.; Strittmatter, A.; Ajour, M.N.; Daqrouq, K.; Bimberg, D.
In: 2015, Bd. 106, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84923914320&doi=10.1063%2f1.4906994&partnerID=40&md5=1143d24ddbcbde2309ad39b7efa8b767
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Desorption induced GaN quantum dots on (0001) AlN by MOVPE
Bellmann, K.; Tabataba-Vakili, F.; Wernicke, T.; Strittmatter, A.; Callsen, G.; Hoffmann, A.; Kneissl, M.
In: 2015, Bd. 9, S. 526-529, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84942193697&doi=10.1002%2fpssr.201510217&partnerID=40&md5=837b6ba0090b04bc1ceae9add341091d
2014
Buchbeitrag
Advanced quantum light sources: Modelling and realization by deterministic nanofabrication technologies
Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906084663&partnerID=40&md5=bb40ca7ad3e89534dbc9e6782523fe63
Buchbeitrag
Index-coupled quantum-dot distributed-feedback lasers
Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.
In: 2014, S. 240-241, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84921317498&doi=10.1109%2fIPCon.2014.6995337&partnerID=40&md5=8cf47c20d0638ae21545659909e0a18d
Buchbeitrag
Fabrication of deterministic quantum light sources using cathodoluminescence lithography
Gschrey, M.; Gericke, F.; Schmidt, R.; Schlottmann, E.; Schüssler, A.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84899739511&partnerID=40&md5=f369483f7203ca07497948edbe9cb96a
Buchbeitrag
Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.
In: 2014, Bd. 2014-January, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84944699313&partnerID=40&md5=3b9e01a819da82c754b1cc07f4c15c4a
Buchbeitrag
Boosting the photon-extraction efficiency of nanophotonic structures by deterministic microlenses
Gschrey, M.; Seifried, M.; Krüger, L.; Schmidt, R.; Schulze, J.-H.; Heinde, T.; Burger, S.; Rodt, S.; Schmidt, F.; Strittmatter, A.; Reitzenstein, S.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84905482276&partnerID=40&md5=0c609ea395f59badbe1622dfc87026c0
Buchbeitrag
Indistinguishable photons from deterministic quantum dot microlenses
Thoma, A.; Schnauber, P.; Gschrey, M.; Schmidt, R.; Wohlfeil, B.; Seifried, M.; Schulze, J.-H.; Burger, S.; Schmidt, F.; Strittmatter, A.; Rodt, S.; Heindel, T.; Reitzenstein, S.
In: 2014, Bd. Part F3-EQEC 2015, https://www.scopus.com/inward/record.uri?eid=2-s2.0-85016559968&partnerID=40&md5=bf81fc7624fc5b7556b19061c615735b
Begutachteter Zeitschriftenartikel
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger, C.; Dadgar, A.; Bläsing, J.; Lesnik, A.; Veit, P.; Schmidt, G.; Hempel, T.; Christen, J.; Krost, A.; Strittmatter, A.
In: Journal of Crystal Growth, 2014, S. , ISSN 00220248, 10.1016/j.jcrysgro.2014.09.008
Begutachteter Zeitschriftenartikel
15 Gb/s index-coupled distributed-feedback lasers based on 1.3 μ m InGaAs quantum dots
Stubenrauch, M.; Stracke, G.; ArsenijeviĿ, D.; Strittmatter, A.; Bimberg, D.
In: 2014, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908577783&doi=10.1063%2f1.4887063&partnerID=40&md5=8659e5950e8142998f84d030fa9a31df
Begutachteter Zeitschriftenartikel
Indirect and direct optical transitions in In0.5Ga 0.5As/GaP quantum dots
Stracke, G.; Sala, E.M.; Selve, S.; Niermann, T.; Schliwa, A.; Strittmatter, A.; Bimberg, D.
In: 2014, Bd. 104, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84897373782&doi=10.1063%2f1.4870087&partnerID=40&md5=19ef35fe69322d1dbdc0c858df9e6958
2013
Buchbeitrag
Self-aligned quantum-dot growth for single-photon sources
Pohl, U.W.; Strittmatter, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Unrau, W.; Heindel, T.; Hitzemann, O.; Bimberg, D.; Reitzenstein, S.
In: 2013, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84882325064&doi=10.1109%2fICIPRM.2013.6562566&partnerID=40&md5=36fb63e5fd38aa8e2be2557383b6a0b1
Begutachteter Zeitschriftenartikel
In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
Gschrey, M.; Gericke, F.; Schüßler, A.; Schmidt, R.; Schulze, J.-H.; Heindel, T.; Rodt, S.; Strittmatter, A.; Reitzenstein, S.
In: 2013, Bd. 102, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84879872412&doi=10.1063%2f1.4812343&partnerID=40&md5=34ecb3703ca38b8112ecc1a8bfa52395
Begutachteter Zeitschriftenartikel
Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots
Switaiski, T.; Woggon, U.; Alden Angeles, D.E.; Hoffmann, A.; Schulze, J.-H.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.
In: 2013, Bd. 88, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84880834034&doi=10.1103%2fPhysRevB.88.035314&partnerID=40&md5=54e2bd2743b10f9f72e5fa2561e6fff5
Begutachteter Zeitschriftenartikel
Spatial structure of In
Prohl, C.; Lenz, A.; Roy, D.; Schuppang, J.; Stracke, G.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Eisele, H.; Dähne, M.
In: 2013, Bd. 102, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84875940382&doi=10.1063%2f1.4798520&partnerID=40&md5=66789de1236a2a85e5d30e42383ece93
2012
Buchbeitrag
Site-selective growth of single quantum dots
Strittmatter, A.
In: 2012, Bd. 209, S. 2378, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871211692&doi=10.1002%2fpssa.201221943&partnerID=40&md5=439fc2628649e56b5ed722bfac8db02a
Begutachteter Zeitschriftenartikel
Site-controlled quantum dot growth on buried oxide stressor layers
Strittmatter, A.; Holzbecher, A.; Schliwa, A.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.
In: 2012, Bd. 209, S. 2411-2420, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84871226189&doi=10.1002%2fpssa.201228407&partnerID=40&md5=80edf552a4ddf09da1b688b9ee3b1b8d
Begutachteter Zeitschriftenartikel
Growth of In
Stracke, G.; Glacki, A.; Nowozin, T.; Bonato, L.; Rodt, S.; Prohl, C.; Lenz, A.; Eisele, H.; Schliwa, A.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.
In: 2012, Bd. 101, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870528123&doi=10.1063%2f1.4768294&partnerID=40&md5=07246f419ce8fcd0b4c02f0ae58f5cfb
Begutachteter Zeitschriftenartikel
Electrically driven single photon source based on a site-controlled quantum dot with self-aligned current injection
Unrau, W.; Quandt, D.; Schulze, J.-H.; Heindel, T.; Germann, T.D.; Hitzemann, O.; Strittmatter, A.; Reitzenstein, S.; Pohl, U.W.; Bimberg, D.
In: 2012, Bd. 101, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870036893&doi=10.1063%2f1.4767525&partnerID=40&md5=b08fe32939126f83e67330162dca98d4
Begutachteter Zeitschriftenartikel
Lateral positioning of InGaAs quantum dots using a buried stressor
Strittmatter, A.; Schliwa, A.; Schulze, J.-H.; Germann, T.D.; Dreismann, A.; Hitzemann, O.; Stock, E.; Ostapenko, I.A.; Rodt, S.; Unrau, W.; Pohl, U.W.; Hoffmann, A.; Bimberg, D.; Haisler, V.
In: 2012, Bd. 100, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857942663&doi=10.1063%2f1.3691251&partnerID=40&md5=99dcefc77d1478eead0fcefd2b6d3993
Begutachteter Zeitschriftenartikel
High-power low-divergence 1060nm photonic crystal laser diodes based on quantum dots
Posilovic, K.; Kalosha, V.P.; Winterfeldt, M.; Schulze, J.-H.; Quandt, D.; Germann, T.D.; Strittmatter, A.; Bimberg, D.; Pohl, J.; Weyers, M.
In: 2012, Bd. 48, S. 1419-1420, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84868707765&doi=10.1049%2fel.2012.3174&partnerID=40&md5=de41ab1a028d264e4a2074ca9c4e48c6
Begutachteter Zeitschriftenartikel
Atomic structure of closely stacked InAs submonolayer depositions in GaAs
Niermann, T.; Kieling, F.; Lehmann, M.; Schulze, J.-H.; Germann, T.D.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.
In: 2012, Bd. 112, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84868343890&doi=10.1063%2f1.4758301&partnerID=40&md5=271b84a43c69da84bb802d65220996ed
Begutachteter Zeitschriftenartikel
Electro-optical resonance modulation of vertical-cavity surface-emitting lasers
Germann, T.D.; Hofmann, W.; Nadtochiy, A.M.; Schulze, J.-H.; Mutig, A.; Strittmatter, A.; Bimberg, D.
In: 2012, Bd. 20, S. 5099-5107, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84857553437&doi=10.1364%2fOE.20.005099&partnerID=40&md5=12de1af8db3f005e2efa288225165788
2011
Buchbeitrag
InAlGaN optical emitters: Laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes
Chua, C.; Yang, Z.; Knollenberg, C.; Teepe, M.; Cheng, B.; Strittmatter, A.; Bour, D.; Johnson, N.M.
In: 2011, Bd. 7939, https://www.scopus.com/inward/record.uri?eid=2-s2.0-79955769720&doi=10.1117%2f12.875188&partnerID=40&md5=ad61566de7601beffef54127f0ce0985
Begutachteter Zeitschriftenartikel
Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(1 1 .2) layers
Strittmatter, A.; Teepe, M.; Knollenberg, C.; Johnson, N.M.
In: 2011, Bd. 314, S. 1-4, https://www.scopus.com/inward/record.uri?eid=2-s2.0-78651092912&doi=10.1016%2fj.jcrysgro.2010.09.064&partnerID=40&md5=03cc71d658d3cb8b4e056228e5ef2a72
Begutachteter Zeitschriftenartikel
Semi-polar nitride surfaces and heterostructures
Strittmatter, A.; Northrup, J.E.; Johnson, N.M.; Kisin, M.V.; Spiberg, P.; El-Ghoroury, H.; Usikov, A.; Syrkin, A.
In: 2011, Bd. 248, S. 561-573, https://www.scopus.com/inward/record.uri?eid=2-s2.0-79951748895&doi=10.1002%2fpssb.201046422&partnerID=40&md5=69925d229b3d6922d53261ab16ee799c
Begutachteter Zeitschriftenartikel
In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers
Wunderer, T.; Northrup, J.E.; Yang, Z.; Teepe, M.; Strittmatter, A.; Johnson, N.M.; Rotella, P.; Wraback, M.
In: 2011, Bd. 99, https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855218172&doi=10.1063%2f1.3663575&partnerID=40&md5=fce419f6a3828585d17370dd3d43edac
Begutachteter Zeitschriftenartikel
Atomic structure and optical properties of InAs submonolayer depositions in GaAs
Lenz, A.; Eisele, H.; Becker, J.; Schulze, J.-H.; Germann, T.D.; Luckert, F.; Pötschke, K.; Lenz, E.; Ivanova, L.; Strittmatter, A.; Bimberg, D.; Pohl, U.W.; Dähne, M.
In: 2011, Bd. 29, https://www.scopus.com/inward/record.uri?eid=2-s2.0-80051910627&doi=10.1116%2f1.3602470&partnerID=40&md5=ad23b2aa6e5dc9091e632497b52ce14e
2010
Buchbeitrag
Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates
Strittmatter, A.; Teepe, M.; Knollenberg, C.; Yang, Z.; Chua, C.; Johnson, N.M.; Spiberg, P.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.
In: 2010, Bd. 7616, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77951522884&doi=10.1117%2f12.842177&partnerID=40&md5=069ebe1a13ee28c2100053820ea8207d
Buchbeitrag
Optically-pumped lasing of semi-polar InGaN/GaN(1122) heterostructures
Strittmatter, A.; Teepe, M.; Yang, Z.; Chua, C.; Northrup, J.; Johnson, N.M.; Spiberg, P.; Brown, R.G.W.; Ivantsov, V.; Syrkin, A.; Shapovalov, L.; Usikov, A.
In: 2010, Bd. 7, S. 1814-1816, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955798387&doi=10.1002%2fpssc.200983557&partnerID=40&md5=6d7287e07549d46e465bdb7112c776bf
Begutachteter Zeitschriftenartikel
Monolithic electro-optically modulated vertical cavity surface emitting laser with 10 Gb/s open-eye operation
Germann, T.D.; Strittmatter, A.; Mutig, A.; Nadtochiy, A.M.; Lott, J.A.; Blokhin, S.A.; Karachinsky, L.Y.; Shchukin, V.A.; Ledentsov, N.N.; Pohl, U.W.; Bimberg, D.
In: 2010, Bd. 7, S. 2552-2554, https://www.scopus.com/inward/record.uri?eid=2-s2.0-78449245283&doi=10.1002%2fpssc.200983889&partnerID=40&md5=2c14db881b73020eb85fdbfc79e57e73
Begutachteter Zeitschriftenartikel
Nitride laser diodes with nonepitaxial cladding layers
Cheng, B.; Chua, C.L.; Yang, Z.; Teepe, M.; Knollenberg, C.; Strittmatter, A.; Johnson, N.
In: 2010, Bd. 22, S. 329-331, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955178653&doi=10.1109%2fLPT.2009.2039564&partnerID=40&md5=a8bf8a5b552ceece909b0a86301be98e
Begutachteter Zeitschriftenartikel
Structural characterization of thick (112Ì¿2) GaN layers grown by HVPE on m-plane sapphire
Usikov, A.; Soukhoveev, V.; Shapovalov, L.; Syrkin, A.; Ivantsov, V.; Scanlan, B.; Nikiforov, A.; Strittmatter, A.; Johnson, N.; Zheng, J.-G.; Spiberg, P.; El-Ghoroury, H.
In: 2010, Bd. 207, S. 1295-1298, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954288208&doi=10.1002%2fpssa.200983655&partnerID=40&md5=a09391698417d9e2ecc80c881b14e4b3
Begutachteter Zeitschriftenartikel
Large internal dipole moment in InGaN/GaN quantum dots
Ostapenko, I.A.; Hönig, G.; Kindel, C.; Rodt, S.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.
In: 2010, Bd. 97, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955762884&doi=10.1063%2f1.3477952&partnerID=40&md5=00c5e219670ec7f20498b7769e69de6e
Begutachteter Zeitschriftenartikel
Atomic Structure of buried InAs sub-monolayer depositions in GaAs
Lenz, A.; Eisele, H.; Becker, J.; Ivanova, L.; Lenz, E.; Luckert, F.; Pötschke, K.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dähne, M.
In: 2010, Bd. 3, https://www.scopus.com/inward/record.uri?eid=2-s2.0-78549258107&doi=10.1143%2fAPEX.3.105602&partnerID=40&md5=2d897d244b3743bcb0324a909fefe57a
Begutachteter Zeitschriftenartikel
Optical properties of InN grown on templates with controlled surface polarities
Kirste, R.; Wagner, M.R.; Schulze, J.H.; Strittmatter, A.; Collazo, R.; Sitar, Z.; Alevli, M.; Dietz, N.; Hoffmann, A.
In: 2010, Bd. 207, S. 2351-2354, https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957899384&doi=10.1002%2fpssa.201026086&partnerID=40&md5=91c15642fcaaef8c990f9da6dbfd9609
2009
Buchbeitrag
Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance
Ledentsov, N.N.; Lott, J.A.; Shchukin, V.A.; Quast, H.; Hopfer, F.; Fiol, G.; Mutig, A.; Moser, P.; Germann, T.; Strittmatter, A.; Karachinsky, L.Y.; Blokhin, S.A.; Novikov, I.I.; Nadtochi, A.M.; Zakharov, N.D.; Werner, P.; Bimberg, D.
In: 2009, Bd. 7224, https://www.scopus.com/inward/record.uri?eid=2-s2.0-65649140013&doi=10.1117%2f12.810192&partnerID=40&md5=e523ebdbcd7dd7655b14934e7e5b5ade
2008
Buchbeitrag
Characterisation of an InAs quantum dot semiconductor disk laser
Schlosser, P.; Calvez, S.; Hastie, J.E.; Jin, S.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dawson, M.D.
In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-51349135539&doi=10.1109%2fCLEO.2008.4551842&partnerID=40&md5=a21ebf07cb931678e90726923c6b2b79
Buchbeitrag
High-speed directly and indirectly modulated VCSELs
Hopfer, F.; Mutig, A.; Strittmatter, A.; Fiol, G.; Moser, P.; Bimberg, D.; Shchukin, V.A.; Ledentsov, N.N.; Lott, J.A.; Quast, H.; Kuntz, M.; Mikhrin, S.S.; Krestnikov, I.L.; Livshits, D.A.; Kovsh, A.R.; Bornholdt, C.
In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-70149102251&doi=10.1109%2fICIPRM.2008.4703064&partnerID=40&md5=9d216fa4c9c47df02f7b7d8b818c04dc
Buchbeitrag
Ultrahigh-speed electrooptically-modulated VCSELs: Modeling and experimental results
Shchukin, V.A.; Ledentsov, N.N.; Lott, J.A.; Quast, H.; Hopfer, F.; Karachinsky, L.Ya.; Kuntz, M.; Moser, P.; Mutig, A.; Strittmatter, A.; Kalosha, V.P.; Bimberg, D.
In: 2008, Bd. 6889, https://www.scopus.com/inward/record.uri?eid=2-s2.0-41149154823&doi=10.1117%2f12.784371&partnerID=40&md5=606adcee154d5835da01696a58f88b03
Buchbeitrag
Quantum-dot semiconductor disk-lasers
Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, S. 197-198, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56449085715&doi=10.1109%2fINOW.2008.4634508&partnerID=40&md5=5e4daddb52c0aa7a521da285861247f0
Buchbeitrag
Characterisation of an InAs quantum dot semiconductor disk laser
Schlosser, P.; Calvez, S.; Hastie, J.E.; Jin, S.; Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Dawson, M.D.
In: 2008, https://www.scopus.com/inward/record.uri?eid=2-s2.0-84898606255&partnerID=40&md5=7294f58ef8514b615825c8111a78b0be
Buchbeitrag
Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
Winkelnkemper, M.; Dworzak, M.; Battel, T.P.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.
In: 2008, Bd. 245, S. 2766-2770, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56749174716&doi=10.1002%2fpssb.200844129&partnerID=40&md5=a980281a7ad80d7100047c80993650cd
Buchbeitrag
Phonon interaction in InGaAs/GaAs quantum dots
Werner, S.; Zimmer, P.; Strittmatter, A.; Hoffmann, A.
In: 2008, Bd. 1053, S. 12-16, https://www.scopus.com/inward/record.uri?eid=2-s2.0-67649215426&partnerID=40&md5=ae07d1daa1a65b1dc22bd975d6c00c02
Begutachteter Zeitschriftenartikel
1040nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime
Strittmatter, A.; Germann, T.D.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, Bd. 44, S. 290-291, https://www.scopus.com/inward/record.uri?eid=2-s2.0-39349097506&doi=10.1049%2fel%3a20083131&partnerID=40&md5=999ade0a79ca0919af849a98a81610f9
Begutachteter Zeitschriftenartikel
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
Strittmatter, A.; Germann, T.D.; Kettler, Th.; Posilovic, K.; Pohl, J.; Pohl, U.W.; Bimberg, D.
In: 2008, Bd. 310, S. 5066-5068, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56549109153&doi=10.1016%2fj.jcrysgro.2008.07.069&partnerID=40&md5=95be1586eb165bb97083cc7efb74bb47
Begutachteter Zeitschriftenartikel
Quantum-dot semiconductor disk lasers
Germann, T.D.; Strittmatter, A.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, Bd. 310, S. 5182-5186, https://www.scopus.com/inward/record.uri?eid=2-s2.0-56249093784&doi=10.1016%2fj.jcrysgro.2008.07.004&partnerID=40&md5=64905624421169d2df99d67929f1af73
Begutachteter Zeitschriftenartikel
Temperature-stable operation of a quantum dot semiconductor disk laser
Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, Bd. 93, https://www.scopus.com/inward/record.uri?eid=2-s2.0-51849104570&doi=10.1063%2f1.2968137&partnerID=40&md5=81c25dbc90ec403a9f2b34c56b94c3e2
Begutachteter Zeitschriftenartikel
Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
Winkelnkemper, M.; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.
In: 2008, Bd. 40, S. 2217-2219, https://www.scopus.com/inward/record.uri?eid=2-s2.0-41349095664&doi=10.1016%2fj.physe.2007.11.033&partnerID=40&md5=8f00bf17b34f23a7ac5c7a2185156046
Begutachteter Zeitschriftenartikel
High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots
Germann, T.D.; Strittmatter, A.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.
In: 2008, Bd. 92, https://www.scopus.com/inward/record.uri?eid=2-s2.0-40849097939&doi=10.1063%2f1.2898165&partnerID=40&md5=acda2ba3b3ba547a35a492013e0e44ea
2007
Begutachteter Zeitschriftenartikel
Polarized emission lines from A - And B -type excitonic complexes in single InGaN/GaN quantum dots
Winkelnkemper, M.; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmatter, A.; Hoffmann, A.; Bimberg, D.
In: 2007, Bd. 101, https://www.scopus.com/inward/record.uri?eid=2-s2.0-34250635968&doi=10.1063%2f1.2743893&partnerID=40&md5=770302f8bee3d89a829e9c83d74b402a
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